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Nanoscale characterization of materials and devices by scanning probe techniques with focus on the electrical and magnetic properties of thin films and nanostructures. Development of capacitive transducers for neuron interfacing. Investigation of protective coatings for optical microsystems.
GT graduated in Physics in 1993 at the University of Rome “La Sapienza” with a thesis on the electrical characterization and modelling of amorphous and polycristalline silicon thin film transistors for large area electronics. She continued on this research topic until December 1995, as research assistant at the Engineering Department of the University of Cambridge, UK.
In 1996 GT joined MDM Laboratory, where she was involved in the set up of the laboratory and started working on the characterization of materials for non-volatile memory devices and large scale integration.
Research Scientist since 2001, her main expertise is in the nanoscale characterization of materials and devices by scanning probe techniques, with focus on the electrical and magnetic properties of thin films and nanostructures and in the electrical characterization of devices.
GT has been actively involved in several national and international projects as local scientific contact (FIRB 2001 - RBAU01PYB3_004; MAE 9/2004; Cariplo 2005/1079; PRIN 2009 - 2009WPZM4S_002) and she regularly contributed to the industrial research projects with STMicroelectronics.
In 2007-2009 she was the coordinator of the EU project FP6-ICT-VERSATILE, focused on the crossbar integration of resistive switching memory elements by the development of inorganic and hybrid inorganic-organic low temperature rectifying junctions.
Other activities in the recent past include the investigation by scanning tunneling microscopy in UHV of two-dimensional silicon monolayers (silicene) and the spatially resolved characterization by conductive-AFM and scanning kelvin probe force microscopy of thin dielectric films for resistive switching memory devices.
In 2010-2015 she was elected member of the CNR-IMM Advisory Council and in 2015-2021 she served as Deputy Director of the Agrate Unit.
Scientific Productions
Electrochemical Society Meeting Abstracts 244 [The Electrochemical Society, Inc.], Issue: 30 Pages: 1536-1536
Plasma-Assisted Atomic Layer Deposition of IrO2 for Neuroelectronics
Nanomaterials [MDPI], Volume: 13 Issue: 6 Pages: 976
ACS Applied Nano Materials [American Chemical Society], Volume: 5 Issue: 7 Pages: 9818-9828
The electrons' journey in thick metal oxides
Applied Physics Letters [AIP Publishing LLC], Volume: 121 Issue: 1 Pages: 012902
Atomic Defects Profiling and Reliability of Amorphous Al₂O₃ Metal-Insulator-Metal Stacks
IEEE Transactions on Electron Devices [IEEE],
Extraction of Defects Properties in Dielectric Materials From IV Curve Hysteresis
IEEE Electron Device Letters [IEEE], Volume: 42 Issue: 2 Pages: 220-223
Journal of Magnetism and Magnetic Materials [North-Holland], Volume: 509 Pages: 166885
ALD growth of ultra-thin Co layers on the topological insulator Sb 2 Te 3
Nano Research [Tsinghua University Press], Volume: 13 Issue: 2 Pages: 570-575
Physical Review Applied [American Physical Society], Volume: 10 Issue: 6 Pages: 064053
Sensors and Actuators A: Physical [Elsevier], Volume: 282 Pages: 124-131
Thin Solid Films [Elsevier], Volume: 616 Pages: 408-414
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [American Vacuum Society], Volume: 34 Issue: 5 Pages: 051510
P‐164: Organic Light Emitting Transistors (OLETs) using ALD‐grown Al2O3 dielectric
SID Symposium Digest of Technical Papers [], Volume: 47 Issue: 1 Pages: 1737-1739
Applied Surface Science [North-Holland], Volume: 368 Pages: 470-476
Solid-state dewetting of ultra-thin Au films on SiO {sub 2} and HfO {sub 2}
Nanotechnology [], Volume: 25
Solid-state dewetting of ultra-thin Au films on SiO2 and HfO2
Nanotechnology [IOP Publishing], Volume: 25 Issue: 49 Pages: 495603
Formation and disruption of conductive filaments in a Hf [O. sub. 2]/TiN structure
Nanotechnology [], Volume: 25 Issue: 38
Formation and disruption of conductive filaments in a HfO2/TiN structure
Nanotechnology [IOP Publishing], Volume: 25 Issue: 38 Pages: 385705
Formation and disruption of conductive filaments in a HfO {sub 2}/TiN structure
Nanotechnology (Print) [], Volume: 25
Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition
Journal of Applied Physics [American Institute of Physics], Volume: 115 Issue: 17 Pages: 17D907
Exploring the morphological and electronic properties of silicene superstructures
Applied surface science [North-Holland], Volume: 291 Pages: 109-112
Low-temperature atomic layer deposition of MgO thin films on Si
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 46 Issue: 48 Pages: 485304
Bipolar resistive switching of Au/NiOx/Ni/Au heterostructure nanowires
Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 15 Pages: 153506
Hindering the oxidation of silicene with non‐reactive encapsulation
Advanced Functional Materials [WILEY‐VCH Verlag], Volume: 23 Issue: 35 Pages: 4340-4344
Advanced Functional Materials [WILEY‐VCH Verlag], Volume: 23 Issue: 35 Pages: 4339-4339
Thin solid films [Elsevier], Volume: 533 Pages: 75-78
Engineered fabrication of ordered arrays of Au–NiO–Au nanowires
Nanotechnology [IOP Publishing], Volume: 24 Issue: 4 Pages: 045302
Low-power resistive switching in Au/NiO/Au nanowire arrays
Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 22 Pages: 223510
Local electronic properties of corrugated silicene phases
Advanced Materials [WILEY‐VCH Verlag], Volume: 24 Issue: 37 Pages: 5088-5093
The Journal of Physical Chemistry C [American Chemical Society], Volume: 116 Issue: 35 Pages: 18746-18751
2-D finite-element modeling of ZnO Schottky diodes with large ideality factors
IEEE transactions on electron devices [IEEE], Volume: 59 Issue: 10 Pages: 2762-2766
Nanosession: Valence Change Memories‐A Look Inside
Frontiers in Electronic Materials: A Collection of Extended Abstracts of the Nature Conference Frontiers in Electronic Materials, June 17th to 20th 2012, Aachen, Germany [Wiley‐VCH Verlag GmbH & Co. KGaA], Pages: 233-245
Electrodeposition of Arrays of Au/NiO/Au Nanowire Heterostructures for ReRAM Applications
ECS Meeting Abstracts [IOP Publishing], Issue: 45 Pages: 3294
Thin solid films [Elsevier], Volume: 520 Issue: 14 Pages: 4820-4822
Additional information on Appl. Phys. Lett.
APPLIED PHYSICS LETTERS [], Volume: 101 Pages: 223510
Electrodeposition of Metal-Oxide-Metal Nanowire Heterostructures for ReRAM Applications
ECS Meeting Abstracts [IOP Publishing], Issue: 35 Pages: 2226
Electrodeposition of Metal-Oxide-Metal Nanowire Heterostructures for ReRAM Applications
Meeting Abstracts [The Electrochemical Society], Issue: 35 Pages: 2226-2226
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 43 Issue: 6 Pages: 065002
ZnO-based selectors for crossbar non-volatile memories
EPCOS2010 Proceedings [], Pages: 172-173
Journal of Applied Physics [American Institute of Physics], Volume: 105 Issue: 12 Pages: 122413
Poly (3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications
Applied Physics Letters [American Institute of Physics], Volume: 94 Issue: 14 Pages: 143501
Excited-State Lifetime Assay for Protein Detection on Gold Colloids− Fluorophore Complexes
The Journal of Physical Chemistry C [American Chemical Society], Volume: 113 Issue: 7 Pages: 2722-2730
Optica Applicata [], Volume: 39 Issue: 4
Microelectronic Engineering [Elsevier], Volume: 85 Issue: 12 Pages: 2414-2419
Integration of organic based Schottky junctions into crossbar arrays by standard UV lithography
ORGANIC ELECTRONICS [ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDA], Volume: 9 Issue: 6 Pages: 1044-1050
Microelectronic Engineering [Elsevier], Volume: 85 Issue: 12 Pages: 2442-2444
Integration of organic based Schottky junctions for crossbar non-volatile memory applications
Microelectronics engineering [ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDA], Volume: 85 Issue: 12 Pages: 2439-2441
Vertically stacked non-volatile memory devices–material considerations
Microelectronic Engineering [Elsevier], Volume: 85 Issue: 12 Pages: 2434-2438
Materials Science in Semiconductor Processing [Pergamon], Volume: 11 Issue: 5 Pages: 236-240
Materials science in semiconductor processing [Pergamon], Volume: 11 Issue: 5-6 Pages: 236-240
ZnO by Atomic Layer Deposition for Vertically Stacked Non-Volatile Memory Devices
Meeting Abstracts [The Electrochemical Society], Issue: 36 Pages: 2358-2358
ZnO by Atomic Layer Deposition for Vertically Stacked Non-Volatile Memory Devices
ECS Meeting Abstracts [IOP Publishing], Issue: 36 Pages: 2358
Organic electronics [North-Holland], Volume: 9 Issue: 2 Pages: 198-208
Epitaxial growth of cubic Gd2O3 thin films on Ge substrates
Journal of Physics: Conference Series [IOP Publishing], Volume: 100 Issue: 4 Pages: 042048
Journal of Applied Physics [American Institute of Physics], Volume: 102 Issue: 3 Pages: 034513
Applied physics letters [American Institute of Physics], Volume: 90 Issue: 19 Pages: 193511
Voltage regulation of fluorescence emission of single dyes bound to gold nanoparticles
Nano letters [American Chemical Society], Volume: 7 Issue: 4 Pages: 1070-1075
Atomic layer deposition of Lu silicate films using [(Me3Si) 2N] 3Lu
Journal of The Electrochemical Society [IOP Publishing], Volume: 153 Issue: 11 Pages: F271
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 8 Pages: 083504
Formation and stability of germanium oxide induced by atomic oxygen exposure
Materials science in semiconductor processing [Pergamon], Volume: 9 Issue: 4-5 Pages: 673-678
Emerging non-volatile memories
IEDM Short Course [], Volume: 274 Issue: 5
Emerging non-volatile memories
IEDM Short Course [], Volume: 274 Issue: 5
Self-annealing and aging effect characterization on copper seed thin films
Microelectronic engineering [Elsevier], Volume: 82 Issue: 3-4 Pages: 289-295
The European Physical Journal B-Condensed Matter and Complex Systems [EDP sciences], Volume: 48 Issue: 3 Pages: 359-365
Applied Physics Letters [American Institute of Physics], Volume: 87 Issue: 11 Pages: 112904
Transport characterization of silicon-YBCO buffered multilayers deposited by magnetron sputtering
IEEE transactions on applied superconductivity [IEEE], Volume: 15 Issue: 2 Pages: 3062-3065
Journal of applied physics [American Institute of Physics], Volume: 97 Issue: 7 Pages: 074315
IEEE Transactions on Applied Superconductivity [New York, NY: Institute of Electrical and Electronics Engineers, c1991-], Volume: 15 Issue: 2 Pages: 3062-3065
Simulation of micro-mirrors for optical MEMS
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) [IEEE], Pages: 81-84
Low temperature rectifying junctions for crossbar non-volatile memory devices
2009 IEEE International Memory Workshop [IEEE], Pages: 1-3
Zn-O based selectors for crosspoint mem devices
NVMTS09-Non-Volatile Memory Technology Symposium [],
Nano-scale characterization of high-k dielectric materials by conducting atomic force microscopy
14th International Winterschool on New Developments in Solid State Physics [],
Scanning Probe Microscopy: Characterization, Nanofabrication and Device Application of Functional Materials [Springer, Dordrecht], Pages: 405-411