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Development of materials and technologies for RRAM non volatile memories. Memristive devices for neuromorphic systems. Development of MIM high-density capacitors, incorporating high-dielectric constact materials, for power management and analog application. Expertise in material development, device fabriction, DC and pulsed measurements of nanoelectronic devices. Coordination of activities in the framework of Horizon2020 and FP7 European projects, and of industrial research contracts. Supervising of Master and PhD students, and post-docs. _____________________________________________________________________________________________________________________
Sabina Spiga is currently Research Director at CNR-IMM–Unit of Agrate Brianza (Italy), and she is in charge of developing oxide-based resistive switching non-volatile memories and memristive devices for neuromorphic systems and novel computing paradigms.
S. Spiga received the Degree in Physics from the University of Bologna in 1995 and the Ph.D. in Material Science in 2002 from Università di Milano. In 2002-2003 she joined as post-doc fellow the MDM-INFM Laboratory, where she was appointed as tenure track researcher in February 2004. She became permanent staff researcher in 2009 at CNR-IMM (INFM was merged with CNR since 2005), Senior Researcher in 2018 and Research Director in January 2020.
S. Spiga achieved the national habilitation in “Physics of Matter” [sector: 02/B1] as Associate Professor (II Fascia) in 2013 and as Full Professor (I fascia) in 2017; and in “Electronics” [sector 09/E3] as Associate Professor (II Fascia) in 2017. In 2010 she was invited lecturer at the Department of Microelectronic of the Fudan University (Shanghai, China).
S. Spiga is author/co-author of more than 120 publications on peer reviewed journals and proceedings, and 8 book chapters. The results of her research activities have been presented at several international conferences, including several invited talks and invited seminars at Universities and PhD Schools. She has been invited as a member or external reviewer for PhD Committee in Italy and abroad (7 in the period 2013-2021). She achieved 7 grants as Principal Investigator or Coordinator for Research projects and 1 as Management Committee Member of a COST Action. She is currently member of the Scientific Committee of the Chua Memristor Center, Dresden (Germany).
Research expertise. S. Spiga has expertise in the field of micro/nanoelectronic, in-memory and neuromorphic computing, with respect to material development, device fabrication, electrical testing of nanoelectronic devices. -Her research activity has been/is carried out in the framework of several European (FP6, FP7, Horizon2020), industrial and Italian (MIUR-FIRB, Cariplo) R&D projects. She has/is collaborating with semiconductor company (STMicroelectronics, Micron, IBM), research centers (CEA-LETI, IMEC, INRIM,..) and international research groups including University of Zurich, University of Southampton, Moscow Engineering Physics Institute, ...
Her main research achievements in the last 15 years are related to: (i)Developments of materials and devices for in neuromorphic engineering, RRAM and memristive devices for spiking neural networks; (ii) resistive switching effects in transition metal oxides and nanostructures for RRAM; (iii) development and characterization of advanced materials (oxides, nanocrystals) for FLASH and charge-trap based FLASH non-volatile memory; (iv) synthesis and characterization of high-dielectric constant materials as gate dielectric for advanced transistors on Si, Ge and III-V channels; and MIM capacitors.
Researcher unique identifiers:
- Scopus Author ID: 6701640312,
- Researcher ID: C-3938-2015,
- ORCID: http://orcid.org/0000-0001-7293-7503
Projects. She is currently the CNR Principal Investigator of the EU-Horizon2020-ICT project MeM-Scales – "Memory technologies with multi-scale time constants for neuromorphic architectures" (2020-2023, grant n. 871371); and of the Eu-Horizon2020-FET-CSA project NEUROTECH – Neuromorphic Technology (2018-2022, grant n. 824103).
She is also involved as key person in the Horizon2020- ECSEL project R3POWER UP – 300mm Pilot Line for Smart Power and Power Discretes (2017–2023), and in the Italian Project (PRIN 2017) COSMO - Analogue Computing with Dynamic Switching Memristor Oscillators: Theory, Devices and Applications (2020-2023)
Past Projects:
(2016-2018) EU-Horizon2020-ICT project NeuRAM3 - “NEUral computing aRchitectures in Advanced Monolithic 3D-VLSI nano-technologies”, grant n. 687299. Principal Investigator
(2013-2018) COST Action ICT 1401 MemoCiS -“Memristors-Devices, Models, Circuits, Systems and Applications”. Member of the Italy Management Committee
(2015-2018) EU-Horizon2020- ECSEL project R2POWER300 -Preparing R2 extension to 300mm for BCD Smart Power . Key person
(2013-2016) EU-FP7-FET project RAMP, focusing on the development of memristive devices for synaptic emulation. Key person
(2010-2013) MORE - “Advanced metal-oxide heterostructures for nanoscale ReRAM”In the past, funded by Fondazione Cariplo. Role: Coordinator
(2008-2011) EU-FP7-IP GOSSAMER- Gigascale Oriented Solid State flAsh Memory for EuRope", Principal Investigator
-International projects CNR-IMEC on advanced gate stacks development for III-V semiconductors (2007-2010).
Scientific Productions
Frontiers in Neuroscience [Frontiers], Volume: 17 Pages: 1270090
Chua’s circuit with tunable nonlinearity based on a nonvolatile memristor: Design and realization
IEEE Transactions on Circuits and Systems I: Regular Papers [IEEE],
The 2022 applied physics by pioneering women: a roadmap
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 56 Issue: 7 Pages: 073001
The electrons' journey in thick metal oxides
Applied Physics Letters [AIP Publishing LLC], Volume: 121 Issue: 1 Pages: 012902
Physics-based compact modelling of the analog dynamics of HfOx resistive memories
Neuromorphic Computing and Engineering [IOP Publishing],
ACS Applied Materials & Interfaces [American Chemical Society],
Atomic Defects Profiling and Reliability of Amorphous Al₂O₃ Metal-Insulator-Metal Stacks
IEEE Transactions on Electron Devices [IEEE],
arXiv preprint arXiv:2202.05094 [],
2021 Roadmap on Neuromorphic Computing and Engineering
arXiv preprint arXiv:2105.05956 [],
Frontiers in neuroscience [Frontiers], Volume: 15 Pages: 27
Extraction of Defects Properties in Dielectric Materials From IV Curve Hysteresis
IEEE Electron Device Letters [IEEE], Volume: 42 Issue: 2 Pages: 220-223
Memristive devices for deep learning applications
Memristive Devices for Brain-Inspired Computing: From Materials, Devices, and Circuits to Applications-Computational Memory, Deep Learning, and Spiking Neural Networks [Woodhead Publishing], Pages: 313
Role of resistive memory devices in brain-inspired computing
Memristive Devices for Brain-Inspired Computing: From Materials, Devices, and Circuits to Applications-Computational Memory, Deep Learning, and Spiking Neural Networks [Woodhead Publishing], Pages: 1
System-level integration in neuromorphic co-processors
Memristive Devices for Brain-Inspired Computing: From Materials, Devices, and Circuits to Applications-Computational Memory, Deep Learning, and Spiking Neural Networks [Woodhead Publishing], Pages: 479
Stimulated Ionic Telegraph Noise in Filamentary Memristive Devices
Scientific reports [Nature Publishing Group], Volume: 9 Issue: 1 Pages: 1-9
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 37 Issue: 2 Pages: 021205
Nanotechnology [IOP Publishing], Volume: 30 Issue: 1 Pages: 015102
ACS Applied Nano Materials [American Chemical Society], Volume: 1 Issue: 9 Pages: 4633-4641
Spike-driven threshold-based learning with memristive synapses and neuromorphic silicon neurons
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 51 Issue: 34 Pages: 344003
Evidence of soft bound behaviour in analogue memristive devices for neuromorphic computing
Scientific reports [Nature Publishing Group], Volume: 8 Issue: 1 Pages: 1-12
Journal of Electroceramics [Springer US], Volume: 39 Issue: 1-4 Pages: 21-38
Stochastic circuit breaker network model for bipolar resistance switching memories
Journal of Computational Electronics [Springer US], Volume: 16 Issue: 4 Pages: 1154-1166
Role of Al doping in the filament disruption in HfO 2 resistance switches.
Nanotechnology [IOP Publishing], Volume: 28 Issue: 39 Pages: 395202
Analog HfO2-RRAM Switches for Neural Networks
ECS Transactions [IOP Publishing], Volume: 75 Issue: 32 Pages: 85
(Invited) Analog HfO2-RRAM Switches for Neural Networks
ECS Transactions [The Electrochemical Society], Volume: 75 Issue: 32 Pages: 85-94
Ozone-Based Sequential Infiltration Synthesis of Al2O3 Nanostructures in Symmetric Block Copolymer
ACS applied materials & interfaces [American Chemical Society], Volume: 8 Issue: 49 Pages: 33933-33942
Analog memristive synapse in spiking networks implementing unsupervised learning
Frontiers in neuroscience [Frontiers], Volume: 10 Pages: 482
Experimental study of gradual/abrupt dynamics of HfO2-based memristive devices
Applied Physics Letters [AIP Publishing LLC], Volume: 109 Issue: 13 Pages: 133504
(Invited) Analog Hfox-Rram Switches for Neural Networks
Meeting Abstracts [The Electrochemical Society], Issue: 16 Pages: 1473-1473
Analog Hfox-Rram Switches for Neural Networks
ECS Meeting Abstracts [IOP Publishing], Issue: 16 Pages: 1473
Analog Hfox-Rram Switches for Neural Networks
ECS Meeting Abstracts [IOP Publishing], Issue: 16 Pages: 1473
Unipolar Resistive‐Switching Mechanisms
Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications [Wiley‐VCH Verlag GmbH & Co. KGaA], Pages: 363-394
Bottom‐Up Approaches for Resistive Switching Memories
Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications [Wiley‐VCH Verlag GmbH & Co. KGaA], Pages: 661-694
PROCEEDINGS-IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS
Ultrasound [], Volume: 21 Pages: 24
Synaptic potentiation and depression in Al: HfO 2-based memristor
Microelectronic Engineering [Elsevier], Volume: 147 Pages: 41-44
Effect of Al doping on the retention behavior of HfO 2 resistive switching memories
Microelectronic Engineering [Elsevier], Volume: 147 Pages: 104-107
Role of metal-oxide interfaces in the multiple resistance switching regimes of Pt/HfO2/TiN devices
Applied Physics Letters [AIP Publishing LLC], Volume: 107 Issue: 2 Pages: 023504
Nanotechnology [IOP Publishing], Volume: 26 Issue: 21 Pages: 215301
Resistive switching in high-density nanodevices fabricated by block copolymer self-assembly
ACS nano [American Chemical Society], Volume: 9 Issue: 3 Pages: 2518-2529
Solid-state dewetting of ultra-thin Au films on SiO {sub 2} and HfO {sub 2}
Nanotechnology [], Volume: 25
Solid-state dewetting of ultra-thin Au films on SiO2 and HfO2
Nanotechnology [IOP Publishing], Volume: 25 Issue: 49 Pages: 495603
Formation and disruption of conductive filaments in a HfO2/TiN structure
Nanotechnology [IOP Publishing], Volume: 25 Issue: 38 Pages: 385705
Formation and disruption of conductive filaments in a Hf [O. sub. 2]/TiN structure
Nanotechnology [], Volume: 25 Issue: 38
Formation and disruption of conductive filaments in a HfO {sub 2}/TiN structure
Nanotechnology (Print) [], Volume: 25
Thin solid films [Elsevier], Volume: 563 Pages: 44-49
Thin Solid Films [Elsevier], Volume: 563 Pages: 44-49
Thin Solid Films [], Volume: 563
Simulation Study of the Trapping Properties of ${\ rm HfO} _ {2} $-Based Charge-Trap Memory Cells
IEEE Transactions on Electron Devices [IEEE], Volume: 61 Issue: 6 Pages: 2056-2063
ACS applied materials & interfaces [American Chemical Society], Volume: 6 Issue: 5 Pages: 3455-3461
Low-temperature atomic layer deposition of MgO thin films on Si
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 46 Issue: 48 Pages: 485304
Bipolar resistive switching of Au/NiOx/Ni/Au heterostructure nanowires
Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 15 Pages: 153506
ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 2 Issue: 9 Pages: P395
Atomic layer-deposited Al–HfO 2/SiO 2 bi-layers towards 3D charge trapping non-volatile memory
Thin Solid Films [Elsevier], Volume: 533 Pages: 9-14
Thin Solid Films [Elsevier Science], Volume: 533 Pages: V-V
ECS Transactions [IOP Publishing], Volume: 50 Issue: 13 Pages: 11
Engineered fabrication of ordered arrays of Au–NiO–Au nanowires
Nanotechnology [IOP Publishing], Volume: 24 Issue: 4 Pages: 045302
Multi-Layered Al2O3/HfO2/SiO2/Si3N4/SiO2 Thin Dielectrics for Charge Trap Memory Applications
ECS Journal of Solid State Science and Technology [The Electrochemical Society], Volume: 2 Issue: 1 Pages: N1-N5
Surface and interface analysis [], Volume: 45 Issue: 1 Pages: 390-393
Additional information on J. Appl. Phys.
JOURNAL OF APPLIED PHYSICS [], Volume: 113 Pages: 104101
Low-power resistive switching in Au/NiO/Au nanowire arrays
Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 22 Pages: 223510
Multi-Layered Al2O3/HfO2/SiO2/Si3N4/SiO2 Thin Dielectrics for Charge Trap Memory Applications
ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 2 Issue: 1 Pages: N1
Switching of nanosized filaments in NiO by conductive atomic force microscopy
Journal of Applied Physics [American Institute of Physics], Volume: 112 Issue: 6 Pages: 064310
The Journal of Physical Chemistry C [American Chemical Society], Volume: 116 Issue: 35 Pages: 18746-18751
ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 1 Issue: 1 Pages: P5
Journal of Applied Physics [American Institute of Physics], Volume: 112 Issue: 1 Pages: 014107
Nanosession: Valence Change Memories‐A Look Inside
Frontiers in Electronic Materials: A Collection of Extended Abstracts of the Nature Conference Frontiers in Electronic Materials, June 17th to 20th 2012, Aachen, Germany [Wiley‐VCH Verlag GmbH & Co. KGaA], Pages: 233-245
ECS Meeting Abstracts [IOP Publishing], Issue: 28 Pages: 2457
Electrodeposition of Arrays of Au/NiO/Au Nanowire Heterostructures for ReRAM Applications
ECS Meeting Abstracts [IOP Publishing], Issue: 45 Pages: 3294
Chemistry of Materials [American Chemical Society], Volume: 24 Issue: 6 Pages: 1080-1090
Effects of thermal treatments on the trapping properties of HfO2 films for charge trap memories
Applied Physics Express [IOP Publishing], Volume: 5 Issue: 2 Pages: 021102
Additional information on J. Appl. Phys.
JOURNAL OF APPLIED PHYSICS [], Volume: 112 Pages: 064310
Additional information on J. Appl. Phys.
Journal of Applied Physics [], Volume: 111 Pages: 07E732
Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0. 53Ga0. 47As
Journal of The Electrochemical Society [The Electrochemical Society], Volume: 159 Issue: 3 Pages: H220-H224
Additional information on J. Appl. Phys.
Journal of Applied Physics [], Volume: 111 Pages: 033711
Atomic layer deposition of Al-doped ZrO2 thin films as gate dielectric for In0. 53Ga0. 47As
Journal of The Electrochemical Society [IOP Publishing], Volume: 159 Issue: 3 Pages: H220
Applied Physics Letters [American Institute of Physics], Volume: 99 Issue: 19 Pages: 193505
ECS Transactions [IOP Publishing], Volume: 41 Issue: 3 Pages: 203
ECS Transactions [The Electrochemical Society], Volume: 41 Issue: 3 Pages: 203-221
Applied physics express [IOP Publishing], Volume: 4 Issue: 9 Pages: 094103
Journal of The Electrochemical Society [IOP Publishing], Volume: 158 Issue: 10 Pages: G221
Electrodeposition of Metal-Oxide-Metal Nanowire Heterostructures for ReRAM Applications
ECS Meeting Abstracts [IOP Publishing], Issue: 35 Pages: 2226
Active Trap Determination at the Interface of Ge and InxGa1-xAs Substrates with Dielectric Layers
ECS Meeting Abstracts [IOP Publishing], Issue: 27 Pages: 1899
Microelectronic engineering [Elsevier], Volume: 88 Issue: 7 Pages: 1174-1177
Al 2 O 3 stacks on In 0.53 Ga 0.47 As substrates: In situ investigation of the interface
Microelectronic Engineering [Elsevier], Volume: 88 Issue: 4 Pages: 435-439
Microelectronic Engineering [Elsevier], Volume: 88 Issue: 4 Pages: 431-434
Atomic Layer Deposition of Al-Doped ZrO2 Thin Films for Advanced Gate Stack on III-V Substrates
ECS Transactions [IOP Publishing], Volume: 35 Issue: 3 Pages: 431
Reset instability in pulsed-operated unipolar resistive-switching random access memory devices
IEEE electron device letters [IEEE], Volume: 32 Issue: 6 Pages: 719-721
Applied physics express [IOP Publishing], Volume: 4 Issue: 5 Pages: 051101
Microelectronic engineering [Elsevier], Volume: 88 Issue: 4 Pages: 431-434
Al2O3 stacks on In0. 53Ga0. 47As substrates: In situ investigation of the interface
Microelectronic engineering [Elsevier], Volume: 88 Issue: 4 Pages: 435-439
Microelectronic Engineering [Elsevier BV], Volume: 88 Issue: 4 Pages: 435-439
Solid-State Electronics [Pergamon], Volume: 58 Issue: 1 Pages: 42-47
Thin Solid Films [Elsevier], Volume: 519 Issue: 11 Pages: 3798-3803
Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices
Journal of Applied Physics [American Institute of Physics], Volume: 109 Issue: 3 Pages: 034506
Solid-State Electronics [Pergamon], Volume: 56 Issue: 1 Pages: 168-174
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 29 Issue: 1 Pages: 01AE04
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 29 Issue: 1 Pages: 01AE03
Applied Physics Express [], Volume: 4 Pages: 094103
Solid-State Electronics [], Volume: 58 Pages: 42-47
Russian Microelectronics [SP MAIK Nauka/Interperiodica], Volume: 39 Issue: 3 Pages: 165-174
Applied Physics Letters [American Institute of Physics], Volume: 96 Issue: 18 Pages: 182901
High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors
Thin solid films [Elsevier], Volume: 518 Issue: 6 Pages: S96-S103
Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks
Thin solid films [Elsevier], Volume: 518 Issue: 6 Pages: S123-S127
Proc. ESSDERC, 2010 Proc. ESSDERC, 2010 408, 2010
Proc. ESSDERC [], Volume: 408
MRS Online Proceedings Library [Springer International Publishing], Volume: 1194 Issue: 1 Pages: 80-88
Transition Metal Binary Oxides for ReRAM Applications
ECS Transactions [IOP Publishing], Volume: 25 Issue: 6 Pages: 411
Impact of electrode materials on resistive-switching memory programming
IEEE electron device letters [IEEE], Volume: 30 Issue: 8 Pages: 817-819
Applied Physics Letters [American Institute of Physics], Volume: 95 Issue: 2 Pages: 023507
Microelectronic engineering [Elsevier], Volume: 86 Issue: 7-9 Pages: 1777-1779
Effect of high-temperature annealing on lanthanum aluminate thin films grown by ALD on Si (100)
Microelectronic engineering [Elsevier], Volume: 86 Issue: 7-9 Pages: 1696-1699
Bipolar resistive electrical switching of CuTCNQ memories incorporating a dedicated switching layer
IEEE electron device letters [IEEE], Volume: 30 Issue: 6 Pages: 620-622
Resistive electrical switching of CuTCNQ based memory with a dedicated switching layer
Proceedings of the MRS Spring Meeting Symposium H: Materials and Physics for Nonvolatile Memories [],
Microelectronic Engineering [Elsevier], Volume: 85 Issue: 12 Pages: 2425-2429
Microelectronic Engineering [Elsevier], Volume: 85 Issue: 12 Pages: 2414-2419
Materials Science in Semiconductor Processing [Pergamon], Volume: 11 Issue: 5 Pages: 236-240
Materials science in semiconductor processing [Pergamon], Volume: 11 Issue: 5-6 Pages: 236-240
Structure and interface bonding of Ge O 2∕ Ge∕ In 0.15 Ga 0.85 As heterostructures
Applied Physics Letters [American Institute of Physics], Volume: 93 Issue: 13 Pages: 133504
Journal of The Electrochemical Society [IOP Publishing], Volume: 155 Issue: 10 Pages: H807
Conduction band offset of Hf O 2 on GaAs
Applied Physics Letters [American Institute of Physics], Volume: 91 Issue: 19 Pages: 192902
Applied Physics Letters [American Institute of Physics], Volume: 91 Issue: 17 Pages: 172905
Vibrational and electrical properties of hexagonal La 2 O 3 films
APPLIED PHYSICS LETTERS [American Institute of Physics], Volume: 91 Issue: 102901
Microelectronic engineering [Elsevier], Volume: 84 Issue: 9-10 Pages: 2263-2266
高誘電率ゲート絶縁膜の信頼性 (先端 LSI 技術と信頼性)
日本信頼性学会誌 信頼性 [日本信頼性学会], Volume: 29 Issue: 4 Pages: 198-205
Interface engineering for Ge metal-oxide–semiconductor devices
Thin Solid Films [Elsevier], Volume: 515 Issue: 16 Pages: 6337-6343
IEEE international electron devices meeting (Washington DC: IEEE International) pp [], Pages: 775-778
Electron Devices Meeting, 2007. IEDM 2007
IEEE International [],
Ch. Dieker, EK Evangelou, S. Galata, M. Houssa, and MM Heyns
Thin Solid Films [], Volume: 515 Pages: 6337
HfO 2 as gate dielectric on Ge: Interfaces and deposition techniques
Materials Science and Engineering: B [Elsevier], Volume: 135 Issue: 3 Pages: 256-260
Atomic layer deposition of Lu silicate films using [(Me3Si) 2N] 3Lu
Journal of The Electrochemical Society [IOP Publishing], Volume: 153 Issue: 11 Pages: F271
Characterization of transient currents in HfO 2 capacitors in the short timescale
Microelectronic engineering [Elsevier], Volume: 83 Issue: 10 Pages: 1927-1930
Germanium diffusion during Hf O 2 growth on Ge by molecular beam epitaxy
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 12 Pages: 122906
Temperature dependence of transient and steady-state gate currents in Hf O 2 capacitors
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 10 Pages: 103504
High-k materials in flash memories
ECS Transactions [IOP Publishing], Volume: 1 Issue: 5 Pages: 91
Band alignment at the La {sub 2} Hf {sub 2} O {sub 7}/(001) Si interface
Applied Physics Letters [], Volume: 88 Issue: 20
Band alignment at the La 2 Hf 2 O 7∕(001) Si interface
Applied physics letters [American Institute of Physics], Volume: 88 Issue: 20 Pages: 202903
Appl. Phys. Lett [], Volume: 89 Pages: 082908
Applied Physics Letters [American Institute of Physics], Volume: 87 Issue: 11 Pages: 112904
Journal of applied physics [American Institute of Physics], Volume: 97 Issue: 7 Pages: 074315
X-ray absorption study of the growth of Y 2 O 3 on Si (001)
Physical Review B [American Physical Society], Volume: 71 Issue: 7 Pages: 075318
X-ray absorption study of the growth of Y {sub 2} O {sub 3} on Si (001)
Physical Review. B, Condensed Matter and Materials Physics [], Volume: 71 Issue: 7
Physical Review-Section B-Condensed Matter [Woodbury, NY: published by the American Physical Society through the American Institute of Physics, c1998-], Volume: 71 Issue: 7 Pages: 75318-75318
Physical Implementation of a Tunable Memristor-based Chua's Circuit
ESSCIRC 2022-IEEE 48th European Solid State Circuits Conference (ESSCIRC) [IEEE], Pages: 117-120
Flux-charge characterizing of reset transition in bipolar resistive-switching memristive devices
Proc. 11th Spanish Conf. Electron Devices [],
HfO2-based memristors for neuromorphic applications
2016 IEEE International Symposium on Circuits and Systems (ISCAS) [IEEE], Pages: 393-396
EU COST action IC1401—Pushing the frontiers of memristive devices to systems
2016 18th Mediterranean Electrotechnical Conference (MELECON) [Ieee], Pages: 1-6
Gradual set dynamics in HfO 2-based memristor driven by sub-threshold voltage pulses
2015 International Conference on Memristive Systems (MEMRISYS) [IEEE], Pages: 1-2
Resistive switching in oxides for nonvolatile memories and neuromorphic computing
2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) [IEEE], Pages: 213-214
Reset Current Reduction and Set-Reset Instabilities in Unipolar NiO RRAM
2011 3rd IEEE International Memory Workshop (IMW) [IEEE], Pages: 1-4
Experimental and simulation study of the program efficiency of HfO 2 based charge trapping memories
2010 Proceedings of the European Solid State Device Research Conference [IEEE], Pages: 408-411
Sub-10 µA reset in NiO-based resistive switching memory (RRAM) cells
2010 IEEE International Memory Workshop [IEEE], Pages: 1-4
Sub-10 microA reset in NiO-based resistive switching memory (RRAM) cells
2010 IEEE International Memory Workshop [], Pages: 66-69
Low temperature rectifying junctions for crossbar non-volatile memory devices
2009 IEEE International Memory Workshop [IEEE], Pages: 1-3
Reliability of NiO-based resistive switching memory (ReRAM) elements with pillar W bottom electrode
2009 IEEE International Memory Workshop [IEEE], Pages: 1-3
Zn-O based selectors for crosspoint mem devices
NVMTS09-Non-Volatile Memory Technology Symposium [],
Read-disturb limited reliability of multilevel NiO-based resistive-switching memory
IEEE Semiconductor Interface Specialist Conference [], Pages: 6.3-1-6.3-2
2007 IEEE International Electron Devices Meeting [IEEE], Pages: 775-778
Transient currents in HfO2 and their impact on circuit and memory applications
2006 IEEE International Reliability Physics Symposium Proceedings [IEEE], Pages: 651-652
Nano-scale characterization of high-k dielectric materials by conducting atomic force microscopy
14th International Winterschool on New Developments in Solid State Physics [],
Metal Oxides for Non-Volatile Memory [Elsevier], Pages: 169-199
[Woodhead Publishing],
Memristive devices for spiking neural networks
Memristive Devices for Brain-Inspired Computing [Woodhead Publishing], Pages: 399-405
Memristive devices as computational memory
Memristive Devices for Brain-Inspired Computing [Woodhead Publishing], Pages: 167-174
Physical, Chemical, and Electrical Characterization of High-κ Dielectrics on Ge and GaAs
Advanced Gate Stacks for High-Mobility Semiconductors [Springer, Berlin, Heidelberg], Pages: 181-209
Electrical characterization of rare earth oxides grown by atomic layer deposition
Rare Earth Oxide Thin Films [Springer, Berlin, Heidelberg], Pages: 203-223
Low temperature CEMS of Sn-implanted SiO 2
ICAME 2005 [Springer, Berlin, Heidelberg], Pages: 69-73
Low temperature CEMS of Sn-implanted SiO2
ICAME 2005 [Springer, Berlin, Heidelberg], Pages: 69-73
Scanning Probe Microscopy: Characterization, Nanofabrication and Device Application of Functional Materials [Springer, Dordrecht], Pages: 405-411