Michele Della Ciana, Alessandro Kovtun, Caterina Summonte, Andrea Candini, Daniela Cavalcoli, Denis Gentili, Roberta Nipoti, Cristiano Albonetti

Native Silicon Oxide Properties Determined by Doping

Langmuir [American Chemical Society], Volume: 39 Issue: 35 Pages: 12430-12451

F Torregrosa, M Canino, F Li, F Tamarri, B Roux, S Morata, F La Via, M Zielinski, R Nipoti

Ion implantation and activation of aluminum in bulk 3C-SiC and 3C-SiC on Si

MRS Advances [Springer International Publishing], Pages: 1-6

Giovanni Alfieri, Stephan Wirths, Dan Buca, Roberta Nipoti

Majority and Minority Carrier Traps in Manganese as‐Implanted and Postimplantation‐Annealed 4H‐SiC

physica status solidi (b) [], Pages: 2200210

Roberta Nipoti, Virginia Boldrini, Mariaconcetta Canino, Fabrizio Tamarri, Salvatore Vantaggio, Antonella Parisini

Estimation of Activation and Compensation Ratios in Al+ Ion Implanted 4H-SiC: Comparison of Two Methodologies

Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 241-245

Peter Wellmann, Michael Schöler, Philipp Schuh, Mike Jennings, Fan Li, Roberta Nipoti, Andrea Severino, Ruggero Anzalone, Fabrizio Roccaforte, Massimo Zimbone, Francesco La Via

Status of 3C-SiC Growth and Device Technology

Wide Bandgap Semiconductors for Power Electronics: Materials, Devices, Applications [John Wiley & Sons],

Giovanna Sozzi, Sergio Sapienza, Roberta Nipoti, Giovanni Chiorboli

OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement Setup

IEEE Transactions on Electron Devices [IEEE],

Marica Canino, Paolo Fedeli, Cristiano Albonetti, Roberta Nipoti

4H‐SiC surface morphology after Al ion implantation and annealing with C‐cap

Journal of Microscopy [], Volume: 280 Issue: 3 Pages: 229-240

Roberta Nipoti, Antonella Parisini, Virginia Boldrini, Salvatore Vantaggio, Marco Gorni, Mariaconcetta Canino, Giulio Pizzochero, Massimo Camarda, Judith Woerle, Ulrike Grossner

Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time

Materials Science Forum [Trans Tech Publications Ltd], Volume: 1004 Pages: 698-704

Roberta Nipoti, Antonella Parisini, Virginia Boldrini, Salvatore Vantaggio, Mariaconcetta Canino, Michele Sanmartin, Giovanni Alfieri

3× 1018-1× 1019 cm-3 Al+ ion implanted 4H-SiC: annealing time effect

Materials Science Forum [Trans Tech Publications Ltd], Volume: 1004 Pages: 683-688

Roberta Nipoti, Antonella Parisini

Al+ Ion Implanted 4H-SiC: Electrical Activation versus Annealing Time

ECS Meeting Abstracts [IOP Publishing], Issue: 31 Pages: 1360

Roberta Nipoti, Mariaconcetta Canino, Marcin Zielinski, Frank Torregrosa, Alberto Carnera

1300° C Annealing of 1× 1020 cm− 3 Al+ Ion Implanted 3C-SiC/Si

ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 8 Issue: 9 Pages: P480

Roberta Nipoti, Antonella Parisini

Al+ Ion Implanted 4H-SiC: Electrical Activation versus Annealing Time

ECS Transactions [IOP Publishing], Volume: 92 Issue: 7 Pages: 91

Giovanna Sozzi, Maurizio Puzzanghera, Roberto Menozzi, Roberta Nipoti

The Role of Defects on Forward Current in 4H-SiC pin Diodes

IEEE Transactions on Electron Devices [IEEE], Volume: 66 Issue: 7 Pages: 3028-3033

Hussein M Ayedh, Marianne E Baathen, Augustinas Galeckas, Jawad Ul Hassan, JP Bergman, Roberta Nipoti, Anders Hallen, Bengt G Svensson

Controlling the Carbon Vacancy in 4H-SiC By Thermal Processing

ECS Transactions [IOP Publishing], Volume: 86 Issue: 12 Pages: 91

Roberta Nipoti, Maurizio Puzzanghera, Mariaconcetta Canino, Giovanna Sozzi, Paolo Fedeli

Ni-Al-Ti Ohmic Contacts with Preserved form Factor and Few 10-4 Ωcm² Specific Resistance on 0.1-1 Ωcm P-Type 4H-SiC.

Materials Science Forum [], Volume: 924

Roberta Nipoti, Maurizio Puzzanghera, Giovanna Sozzi, Roberto Menozzi

Perimeter and Area Components in the IV Curves of 4H-SiC Vertical p⁺-in Diode With Al⁺ Ion-Implanted Emitters

IEEE Transactions on Electron Devices [IEEE], Volume: 65 Issue: 2 Pages: 629-635

Francesco La Via, Fabrizio Roccaforte, Antonino La Magna, Roberta Nipoti, Fulvio Mancarella, Peter Wellman, Danilo Crippa, Marco Mauceri, Peter Ward, Leo Miglio, Marcin Zielinski, Adolf Schöner, Ahmed Nejim, Laura Vivani, Rositza Yakimova, Mikael Syväjärvi, Gregory Grosset, Frank Torregrosa, Michael Jennings, Philip A Mawby, Ruggero Anzalone, Salvatore Coffa, Hiroyuki Nagasawa, Mike Jennings

3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)

Materials Science Forum [], Volume: 924 Pages: 913

Roberta Nipoti, Maurizio Puzzanghera, Giovanna Sozzi, Roberto Menozzi

Perimeter and Area Components in the – Curves of 4H-SiC Vertical p+-i-n Diode With Al+ Ion-Implanted Emitters

IEEE Transactions on Electron Devices [IEEE], Volume: 65 Issue: 2 Pages: 629-635

Roberta Nipoti, Maurizio Puzzanghera, Giovanna Sozzi, Roberto Menozzi

Perimeter and Area Components in the – Curves of 4H-SiC Vertical p+-i-n Diode With Al+ Ion-Implanted Emitters

IEEE Transactions on Electron Devices [IEEE], Volume: 65 Issue: 2 Pages: 629-635

Roberta Nipoti, Maurizio Puzzanghera, Mariaconcetta Canino, Giovanna Sozzi

Ni-Al-Ti Ohmic Contacts on 1 x 1020 cm-3 Al+ Ion Implanted 4H-SiC

ECS Meeting Abstracts [IOP Publishing], Issue: 31 Pages: 1326

Roberta Nipoti, Mariaconcetta Canino, Maurizio Puzzanghera, Giovanna Sozzi

Thermal Stability of 1× 1020 cm-3 Al+ Implanted 4H-SiC after Electrical Activation at Temperature≥ 1850° C

ECS Meeting Abstracts [IOP Publishing], Issue: 31 Pages: 1323

Roberta Nipoti, Mariaconcetta Canino, Maurizio Puzzanghera, Giovanna Sozzi

Thermal Stability of 1× 1020 cm-3 Al+ Implanted 4H-SiC after Electrical Activation at Temperature≥ 1850° C

ECS Transactions [IOP Publishing], Volume: 80 Issue: 7 Pages: 101

Roberta Nipoti, Maurizio Puzzanghera, Mariaconcetta Canino, Giovanna Sozzi

Ni-Al-Ti Ohmic Contacts on 1 x 1020 cm-3 Al+ Ion Implanted 4H-SiC

ECS Transactions [IOP Publishing], Volume: 80 Issue: 7 Pages: 117

HM Ayedh, R Nipoti, Anders Hallén, BG Svensson

Thermodynamic equilibration of the carbon vacancy in 4H-SiC: A lifetime limiting defect

Journal of Applied Physics [AIP Publishing LLC], Volume: 122 Issue: 2 Pages: 025701

Giovanna Sozzi, Maurizio Puzzanghera, Giovanni Chiorboli, Roberta Nipoti

OCVD Lifetime Measurements on 4H-SiC Bipolar Planar Diodes: Dependences on Carrier Injection and Diode Area

IEEE Transactions on Electron Devices [IEEE], Volume: 64 Issue: 6 Pages: 2572-2578

Antonella Parisini, Andrea Parisini, Roberta Nipoti

Size effect on high temperature variable range hopping in Al+ implanted 4H-SiC

Journal of Physics: Condensed Matter [IOP Publishing], Volume: 29 Issue: 3 Pages: 035703

Roberta Nipoti, Giovanna Sozzi, Maurizio Puzzanghera, Roberto Menozzi

Al+ implanted vertical 4H-SiC pin diodes: experimental and simulated forward current-voltage characteristics

MRS Advances [Springer International Publishing], Volume: 1 Issue: 54 Pages: 3637-3642

Roberta Nipoti, Antonella Parisini, Giovanna Sozzi, Maurizio Puzzanghera, Andrea Parisini, Alberto Carnera

Structural and Functional Characterizations of Al+ Implanted 4H-SiC Layers and Al+ Implanted 4H-SiC pn Junctions after 1950° C Post Implantation Annealing

ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 5 Issue: 10 Pages: P621

Roberta Nipoti, Antonella Parisini, Giovanna Sozzi, Maurizio Puzzanghera, Andrea Parisini, Alberto Carnera

4H-SiC Ion Implanted Bipolar Junctions: Relevance of the 1950° C Temperature for Post Implantation Annealing

ECS Transactions [IOP Publishing], Volume: 75 Issue: 12 Pages: 171

Roberta Nipoti, Antonella Parisini, Giovanna Sozzi, Maurizio Puzzanghera, Andrea Parisini, Alberto Carnera

(Invited) 4H-SiC Ion Implanted Bipolar Junctions: Relevance of the 1950° C Temperature for Post Implantation Annealing

ECS Transactions [The Electrochemical Society], Volume: 75 Issue: 12 Pages: 171-181

P Fedeli, M Gorni, A Carnera, A Parisini, G Alfieri, Ulrike Grossner, R Nipoti

1950° C Post Implantation Annealing of Al+ Implanted 4H-SiC: Relevance of the Annealing Time

ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 5 Issue: 9 Pages: P534

Roberta Nipoti, Antonella Parisini, Salvatore Vantaggio, Giovanni Alfieri, Alberto Carnera, Emanuele Centurioni, Ivan Elmi, Ulrike Grossner

1950° C Annealing of Al+ Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing Time

Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 523-526

HM Ayedh, R Nipoti, Anders Hallén, BG Svensson

Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures

Applied Physics Letters [AIP Publishing LLC], Volume: 107 Issue: 25 Pages: 252102

A Parisini, M Gorni, A Nath, L Belsito, Mulpuri V Rao, R Nipoti

Remarks on the room temperature impurity band conduction in heavily Al+ implanted 4H-SiC

Journal of Applied Physics [AIP Publishing LLC], Volume: 118 Issue: 3 Pages: 035101

Luigi Di Benedetto, Gian Domenico Licciardo, Salvatore Bellone, Roberta Nipoti

Analytical prediction of the cross-over point in the temperature coefficient of the forward characteristics of 4H-SiC p+-i-n diodes.

Materials Science Forum [],

R Nipoti, M Puzzanghera, F Moscatelli

P+ implanted 6H-SiC n+-ip diodes: evidence for a post-implantation-annealing dependent defect activation

MRS Online Proceedings Library [Springer International Publishing], Volume: 1693 Issue: 1 Pages: 131-136

A Nath, Mulpuri V Rao, Y-L Tian, A Parisini, R Nipoti

Microwave Annealing of High Dose Al+-implanted 4H-SiC: Towards Device Fabrication

Journal of electronic materials [Springer US], Volume: 43 Issue: 4 Pages: 843-849

HM Ayedh, Viktor Bobal, R Nipoti, Anders Hallén, Bengt Gunnar Svensson

Formation of carbon vacancy in 4H silicon carbide during high-temperature processing

Journal of Applied Physics [American Institute of Physics], Volume: 115 Issue: 1 Pages: 012005

A Parisini, R Nipoti

Analysis of the hole transport through valence band states in heavy Al doped 4H-SiC by ion implantation

Journal of Applied Physics [American Institute of Physics], Volume: 114 Issue: 24 Pages: 243703

Luigi Di Benedetto, Gian Domenico Licciardo, Roberta Nipoti, Salvatore Bellone

On the crossing-point of 4H-SiC power diodes characteristics

IEEE Electron Device Letters [IEEE], Volume: 35 Issue: 2 Pages: 244-246

Luigi Di Benedetto, Gian Domenico Licciardo, Roberta Nipoti, Salvatore Bellone

On the crossing-point of 4H-SiC power diodes characteristics

IEEE Electron Device Letters [IEEE], Volume: 35 Issue: 2 Pages: 244-246

Nadeemullah A Mahadik, Anindya Nath, Eugene A Imhoff, Robert E Stahlbush, Roberta Nipoti

Basal Plane Dislocation Mitigation Using High Temperature Annealing in 4H-SiC Epitaxy

ECS Transactions [IOP Publishing], Volume: 58 Issue: 4 Pages: 325

Roberta Nipoti, Francesco Moscatelli, Pietro De Nicola

${\ rm Al}^{+} $ Implanted 4H-SiC ${\ rm p}^{+} $-in Diodes: Forward Current Negative Temperature Coefficient

IEEE electron device letters [IEEE], Volume: 34 Issue: 8 Pages: 966-968

Roberta Nipoti, Luigi Di Benedetto, Cristiano Albonetti, Salvatore Bellone

Al+ implanted anode for 4H-SiC pin diodes

ECS Transactions [IOP Publishing], Volume: 50 Issue: 3 Pages: 391

Roberta Nipoti, Raffaele Scaburri, Anders Hallén, Antonella Parisini

Conventional thermal annealing for a more efficient p-type doping of Al+ implanted 4H-SiC

Journal of Materials Research [Cambridge University Press], Volume: 28 Issue: 1 Pages: 17

Roberta Nipoti

Ion Implanted 4H-SiC pin Diodes: Comparison between 1600-1650° C and 1950° C Post Implantation Annealing

ECS Meeting Abstracts [IOP Publishing], Issue: 30 Pages: 2562

R Nipoti, A Nath, F Moscatelli, P De Nicola, YL Tian, Mulpuri V Rao

Fully implanted vertical p–i–n diodes using high-purity semi-insulating 4H–SiC wafers

Semiconductor Science and Technology [IOP Publishing], Volume: 27 Issue: 5 Pages: 055005

R Nipoti, A Nath, SB Qadri, YL Tian, C Albonetti, A Carnera, Mulpuri V Rao

High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures≥ 1700° C

Journal of electronic materials [Springer US], Volume: 41 Issue: 3 Pages: 457-465

Roberta Nipoti, Anindya Nath, Mulpuri V Rao, Anders Hallén, Alberto Carnera, Yong-Lai Tian

Microwave annealing of very high dose aluminum-implanted 4H-SiC

Applied Physics Express [IOP Publishing], Volume: 4 Issue: 11 Pages: 111301

Mulpuri V Rao, A Nath, SB Qadri, Y‐L Tian, R Nipoti

Microwave Annealing of Ion Implanted 4H‐SiC

AIP Conference Proceedings [American Institute of Physics], Volume: 1321 Issue: 1 Pages: 241-244

Roberta Nipoti, Fulvio Mancarella, Francesco Moscatelli, Rita Rizzoli, S Zampolli, M Ferri

Carbon-cap for ohmic contacts on ion-implanted 4H–SiC

Electrochemical and Solid State Letters [IOP Publishing], Volume: 13 Issue: 12 Pages: H432

I Pintilie, CM Teodorescu, F Moscatelli, R Nipoti, A Poggi, S Solmi, LS Løvlie, BG Svensson

Analysis of electron traps at the 4 H–SiC/SiO 2 interface; influence by nitrogen implantation prior to wet oxidation

Journal of Applied Physics [American Institute of Physics], Volume: 108 Issue: 2 Pages: 024503

A Poggi, F Moscatelli, S Solmi, A Armigliato, L Belsito, R Nipoti

Effect of nitrogen implantation at the SiO 2/SiC interface on the electron mobility and free carrier density in 4 H-SiC metal oxide semiconductor field effect transistor channel

Journal of Applied Physics [American Institute of Physics], Volume: 107 Issue: 4 Pages: 044506

FG Della Corte, F Pezzimenti, S Bellone, R Nipoti

Simulation analysis of a 4H-SiC BMFET power transistor with normally-off characteristics

The 8th European Conference on Silicon Carbide and Related Materials (ECSCRM), Oslo, Norway [],

Antonella Poggi, Francesco Moscatelli, Sandro Solmi, Roberta Nipoti

Passivation by N Implantation of the SiO 2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1246

Antonella Poggi, Francesco Moscatelli, Sandro Solmi, Roberta Nipoti

Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1246

F Fabbri, D Natalini, A Cavallini, T Sekiguchi, R Nipoti, F Moscatelli

Comparison between cathodoluminescence spectroscopy and capacitance transient spectroscopy on Al+ ion implanted 4H-SiC p+/n diodes

Superlattices and Microstructures [Academic Press], Volume: 45 Issue: 4-5 Pages: 383-387

Fortunato Pezzimenti, Francesco G Della Corte, Roberta Nipoti

Experimental characterization and numerical analysis of the 4H-SiC p–i–n diodes static and transient behaviour

Microelectronics journal [Elsevier], Volume: 39 Issue: 12 Pages: 1594-1599

Antonella Poggi, Francesco Moscatelli, Sandro Solmi, Roberta Nipoti

Investigation on the use of nitrogen implantation to improve the performance of n-channel enhancement 4H-SiC MOSFETs

IEEE transactions on electron devices [IEEE], Volume: 55 Issue: 8 Pages: 2021-2028

Francesco Moscatelli, Antonella Poggi, Sandro Solmi, Roberta Nipoti

Nitrogen implantation to improve electron channel mobility in 4H-SiC MOSFET

IEEE Transactions on Electron Devices [IEEE], Volume: 55 Issue: 4 Pages: 961-967

Francesco Moscatelli, Roberta Nipoti, Sandro Solmi, Stefano Cristiani, Michele Sanmartin, Antonella Poggi

Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 699

Francesco Moscatelli, Fabio Bergamini, Antonella Poggi, Mara Passini, Fabrizio Tamarri, Marco Bianconi, Roberta Nipoti

Room Temperature Annealing Effects on Leakage Current of Ion Implanted p+ n 4H-SiC Diodes

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 1027

Francesco Moscatelli, A Scorzoni, A Poggi, R Nipoti

Annealing effects on leakage current and epilayer doping concentration of p+ n junction 4H-SiC diodes after very high neutron irradiation

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 583 Issue: 1 Pages: 173-176

Francesco G Della Corte, Fortunato Pezzimenti, Roberta Nipoti

Simulation and experimental results on the forward J–V characteristic of Al implanted 4H–SiC p–i–n diodes

Microelectronics Journal [Elsevier], Volume: 38 Issue: 12 Pages: 1273-1279

A Poggi, F Moscatelli, Y Hijikata, S Solmi, R Nipoti

MOS capacitors obtained by wet oxidation of n-type 4H–SiC pre-implanted with nitrogen

Microelectronic engineering [Elsevier], Volume: 84 Issue: 12 Pages: 2804-2809

Marc Avice, Ulrike Grossner, Ioana Pintilie, Bengt G Svensson, Marco Servidori, Roberta Nipoti, Ola Nilsen, Helmer Fjellvåg

Electrical properties of Al 2 O 3∕ 4 H‐Si C structures grown by atomic layer chemical vapor deposition

Journal of Applied Physics [American Institute of Physics], Volume: 102 Issue: 5 Pages: 054513

Francesco G Della CORTE, Fortunate PEZZIMENTI, Roberta NIPOTI

Simulation and experimental results on the forward JV characteristic of Al implanted 4H-SiC pin diodes

Microelectronics journal [], Volume: 38 Issue: 12 Pages: 1273-1279

David Menichelli, Monica Scaringella, Francesco Moscatelli, Mara Bruzzi, Roberta Nipoti

Characterization of energy levels related to impurities in epitaxial 4H-SiC ion implanted p+ n junctions

Diamond and related materials [Elsevier], Volume: 16 Issue: 1 Pages: 6-11

A Poggi, F Moscatelli, Y Hijikata, S Solmi, M Sanmartin, F Tamarri, R Nipoti

Chapter 4-SiC Processing-4.2 Dielectrics and Passivation Layers-Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 639-642

Y Hijikata, S Yoshida, F Moscatelli, A Poggi, S Solmi, S Cristiani, R Nipoti

Chapter 4-SiC Processing-4.2 Dielectrics and Passivation Layers-Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 651-654

F Moscatelli, A Scorzoni, A Poggi, M Passini, G Pizzocchero, R Nipoti

Chapter 5-SiC Devices-5.3 Bipolar Diodes-Effects of Very High Neutron Fluence Irradiation on p+ n Junction 4H-SiC Diodes

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 917-920

U Grossner, M Servidori, M Avice, O Nilsen, H Fjellvag, R Nipoti, BG Svensson

Chapter 4-SiC Processing-4.2 Dielectrics and Passivation Layers-X-Ray and AFM Analysis of Al2O3 Deposited by ALCVD on n-Type 4H-SiC

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 683-686

F Moscatelli, A Scorzoni, A Poggi, M Bruzzi, S Sciortino, S Lagomarsino, G Wagner, I Mandic, R Nipoti

Radiation hardness after very high neutron irradiation of minimum ionizing particle detectors based on 4H-SiC p/sup+/n junctions

IEEE transactions on nuclear science [IEEE], Volume: 53 Issue: 3 Pages: 1557-1563

A Poggi, F Bergamini, R Nipoti, S Solmi, M Canino, A Carnera

Effects of heating ramp rates on the characteristics of Al implanted 4H–SiC junctions

Applied physics letters [American Institute of Physics], Volume: 88 Issue: 16 Pages: 162106

S Rao, F Bergamini, R Nipoti, SE Saddow

Silane overpressure post-implant annealing of Al dopants in SiC: Cold wall CVD apparatus

Applied surface science [North-Holland], Volume: 252 Issue: 10 Pages: 3837-3842

F Moscatelli, A Scorzoni, A Poggi, M Bruzzi, S Sciortino, S Lagomarsino, G Wagner, I Mandic, R Nipoti

RADIATION DAMAGE EFFECTS-Radiation Hardness After Very High Neutron Irradiation of Minimum Ionizing Particle Detectors Based on 4H-SiC p+ n Junctions

IEEE Transactions on Nuclear Science [New York, NY: Professional Technical Group on Nuclear Science, c1963-], Volume: 53 Issue: 3 Pages: 1557-1563

A Moscatelli, F Poggi, A Marino, G Scorzoni, R Sanmartin, M Nipoti

Part 2-Chapter 5-Processing of SiC-5.3 Oxides and Other Dielectrics-Interfacial Properties of SiO2 Grown on 4H-SiC: Comparison between N2O and Wet O2 Oxidation Ambient

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 527529 Pages: 979-982

M Avice, U Grossner, I Pintilie, BG Svensson, M Servidori, R Nipoti

O. Nilsen and Fjellvag, H

Appl. Phys. Lett [], Volume: 89 Pages: 222103

Roberta Nipoti, Alberto Carnera, Fabio Bergamini, Mariaconcetta Canino, Antonella Poggi, Sandro Solmi, Mara Passini

Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 911

SP Bergamini, F Rao, R Hoff, AM Nipoti, E Saddow, SE Oborina

Part 2-Chapter 5-Processing of SiC-5.1 Implantation and Doping of SiC-Post-Implantation Annealing in a Silane Ambient Using Hot-Wall CVD

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 527529 Pages: 839-842

Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, Mara Bruzzi, Stefano Lagomarsino, Stefano Mersi, Silvio Sciortino, Roberta Nipoti

Measurements and simulations of charge collection efficiency of p+/n junction SiC detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 546 Issue: 1-2 Pages: 218-221

A Poggi, A Parisini, R Nipoti, S Solmi

Oxidation kinetics of ion-amorphized (0001) 6H–SiC: Competition between oxidation and recrystallization processes

Applied Physics Letters [AIP Publishing], Volume: 86 Issue: 12

F Moscatelli, A Scorzoni, A Poggi, M Bruzzi, S Lagomarsino, S Mersi, S Sciortino, M Lazar, A Di Placido, R Nipoti

Chapter 6-SiC Devices-6.4 Sensors and Detectors-Measurements of Charge Collection Efficiency of p+/n Junction SiC Detectors

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 1021-1024

F Moscatelli, A Scorzoni, A Poggi, M Canino, R Nipoti

Chapter 5-SiC Technology-5.3 Contacts, Etching and Packaging-Ni-Silicide Contacts to 6H-SiC: Contact Resistivity and Barrier Height on Ion Implanted n-Type and Barrier Height on p-Type Epilayer

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 737-740

M Canino, A Castaldini, A Cavallini, F Moscatelli, R Nipoti, A Poggi

Chapter 5-SiC Technology-5.1 Doping and Implantation-n+/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 649-652

F Bergainini, SP Rao, SE Saddow, R Nipoti

Chapter 5-SiC Technology-5.1 Doping and Implantation-JV Characteristics of Al+ Ion Implanted p+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600 (degree) C

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 629-632

A Poggi, A Parisini, S Solmi, R Nipoti

Chapter 5-SiC Technology-5.2 Dielectrics and Passivation Layers-Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiC

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 665-668

F Bergamini, F Moscatelli, M Canino, A Poggi, R Nipoti

Chapter 5-SiC Technology-5.1 Doping and Implantation-Ar Annealing at 1600 (degree) C and 1650 (degree) C of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the JV Characteristics Versus Annealing

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 625-628