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Scientific Productions
Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults
Applied Physics Letters [AIP Publishing], Volume: 123 Issue: 7
Exploring UV-Laser Effects on Al-Implanted 4H-SiC
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 342 Pages: 85-89
ACS Applied Electronic Materials [American Chemical Society], Volume: 4 Issue: 9 Pages: 4514-4520
Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures
Applied Surface Science [North-Holland], Volume: 579 Pages: 152136
Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures
Semiconductor Science and Technology [IOP Publishing], Volume: 37 Issue: 1 Pages: 015012
Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC
Journal of Physics D: Applied Physics [IOP], Volume: 54 Issue: 44 Pages: 445107
Barrier Height Tuning in Ti/4H-SiC Schottky diodes
Solid-State Electronics [Pergamon], Volume: 186 Pages: 108042
Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 54 Issue: 5 Pages: 055101
Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide
Applied Physics Letters [AIP Publishing LLC], Volume: 117 Issue: 1 Pages: 013502
Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering
Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 290-294
Instruments [Multidisciplinary Digital Publishing Institute], Volume: 2 Issue: 4 Pages: 23
Non-destructive characterization of rare-earth-doped optical fiber preforms
Optics letters [Optical Society of America], Volume: 43 Issue: 20 Pages: 4907-4910
Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors
Materials Science in Semiconductor Processing [Pergamon], Volume: 78 Pages: 38-42
Applied Surface Science [North-Holland], Volume: 420 Pages: 331-335
Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices
physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600366
Ti/Al‐based contacts to p‐type SiC and GaN for power device applications
physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600357
Journal of Applied Physics [AIP Publishing LLC], Volume: 120 Issue: 20 Pages: 205701
Applied Physics Letters [AIP Publishing LLC], Volume: 109 Issue: 1 Pages: 012102
Electrical properties of SiO 2/SiC interfaces on 2°-off axis 4H-SiC epilayers
Applied Surface Science [North-Holland], Volume: 364 Pages: 892-895
Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC
Journal of Applied Physics [AIP Publishing LLC], Volume: 118 Issue: 3 Pages: 035705
ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 3 Issue: 8 Pages: P285
Semiconductor Science and Technology [IOP Publishing], Volume: 29 Issue: 7 Pages: 075018
Recent advances on dielectrics technology for SiC and GaN power devices
Applied Surface Science [North-Holland], Volume: 301 Pages: 9-18
Applied Physics A [Springer Berlin Heidelberg], Volume: 115 Issue: 1 Pages: 333-339
SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3
Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 15 Pages: 153508
Journal of Lightwave Technology [IEEE], Volume: 31 Issue: 8 Pages: 1247-1254
Radiation hardening techniques for Er/Yb doped optical fibers and amplifiers for space application
Optics express [Optical Society of America], Volume: 20 Issue: 8 Pages: 8457-8465
IEEE Photonics Technology Letters [IEEE], Volume: 24 Issue: 6 Pages: 509-511
Journal of Non-Crystalline Solids [North-Holland],
Journées Nationales d’Optique Guidée [],
Chocs Avancees [], Pages: 34-35
Ni/Heavily-Doped 4H-SiC Schottky Contacts
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 411-416
Full non-destructive characterization of doped optical fiber preforms
Fiber Lasers XVI: Technology and Systems [International Society for Optics and Photonics], Volume: 10897 Pages: 108970C
Non-destructive microscopic characterization of optical fiber preforms
Specialty Optical Fibers [Optical Society of America], Pages: SoW3H. 3
Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology
Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 339-344
Study of Ti/Al/Ni Ohmic Contacts to p-Type Implanted 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 377-380
Temperature-Dependence Study of the Gate Current SiO2/4H-SiC MOS Capacitors
Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 473-476
Radiation hardening of rare-earth doped fiber amplifiers
International Conference on Space Optics—ICSO 2012 [International Society for Optics and Photonics], Volume: 10564 Pages: 105641H
Materials Science Forum [Trans Tech Publications Ltd], Volume: 897 Pages: 123-126
Properties of SiO2/4H-SiC Interfaces with an Oxide Deposited by a High-Temperature Process
Materials Science Forum [Trans Tech Publications Ltd], Volume: 897 Pages: 331-334
X-Ray Irradiation on 4H-SiC MOS Capacitors Processed under Different Annealing Conditions
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 659-662
Processing and characterization of MOS capacitors fabricated on 2-off axis 4H-SiC epilayers
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 663-666
Materials Science Forum [Trans Tech Publications Ltd], Volume: 806 Pages: 143-147
Ge Assisted 3C-SiC Nucleation and Growth by Vapour Phase Epitaxy on On-Axis 4H-SiC Substrate
Materials Science Forum [Trans Tech Publications Ltd], Volume: 806 Pages: 27-31
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 428-431
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 424-427
Nanoscale reliability aspects of insulator onto wide band gap compounds
2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 62-65
Characterization of SiO2/SiC interfaces annealed in N2O or POCl3
Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 623-626
Electrical characteristics of Schottky contacts on Ge-doped 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 706-709
Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 665-668
X Symposium: SiO2-Advanced Dielectrics and Related Devices [],
Radiation hardening techniques for rare-earth-based optical fibers and amplifiers
Free-Space Laser Communication Technologies XXIV [International Society for Optics and Photonics], Volume: 8246 Pages: 82460Y
2011 12th European Conference on Radiation and Its Effects on Components and Systems [IEEE], Pages: 305-313
Radiation hardening of Rare Earth doped fiber amplifiers: active and passive characterization
Workshop LIFT [],
Radiation effects on fiber amplifiers: design of radiation tolerant Yb/Er-based devices
Fiber Lasers VIII: Technology, Systems, and Applications [International Society for Optics and Photonics], Volume: 7914 Pages: 79142P
X-ray irradiation influence on prototype Er3+-optical fibers: confocal luminescence study
2nd Workshop on Specialty Optical Fibers and Their Applications (WSOF-2) [International Society for Optics and Photonics], Volume: 7839 Pages: 78391H
Radiation effects on rare-earth doped optical fibers
Nanophotonics and Macrophotonics for Space Environments IV [International Society for Optics and Photonics], Volume: 7817 Pages: 78170I