My activities span from the growth to the characterization of Topological Insulators (TIs). The growth is performed by means of Metal Organic Chemical Vapour Deposition (MOCVD) technique. Such technique allows us to grow with chemical methods on 4'' Sillicon substrates, paving the way for a realistic transfer of TI-based devices from academic laboratories to the micro and nanoelectronic industry. Among my activities there is also the electrical characterization of these and other materials produced in the lab. The electrical characterization is performed by exploiting a dedicated magnetotransport set up equipped with a closed-loop He cryostat able to control the temperature from 5 to 290 K either on simple thin films or on multilayer structures fabricated thanks to our clean room expertise.