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My activities span from the growth to the characterization of Topological Insulators (TIs). The growth is performed by means of Metal Organic Chemical Vapour Deposition (MOCVD) technique. Such technique allows us to grow with chemical methods on 4'' Sillicon substrates, paving the way for a realistic transfer of TI-based devices from academic laboratories to the micro and nanoelectronic industry. Among my activities there is also the electrical characterization of these and other materials produced in the lab. The electrical characterization is performed by exploiting a dedicated magnetotransport set up equipped with a closed-loop He cryostat able to control the temperature from 5 to 290 K either on simple thin films or on multilayer structures fabricated thanks to our clean room expertise.
Scientific Productions
ACS Appl. Mater. Interfaces [https://pubs.acs.org/doi/full/10.1021/acsami.3c08830], Volume: 15 Pages: 50237-50245
Close-to-Dirac point shift of large-area MOCVD-grown Bi2Te3’s Fermi level following growth on Sb2Te3
Bulletin of the American Physical Society [American Physical Society],
Scientific Reports [Nature Publishing Group UK], Volume: 12 Issue: 1 Pages: 3891
Advanced Functional Materials [], Volume: 32 Issue: 4 Pages: 2109361
Advanced Materials Interfaces [], Volume: 8 Issue: 23 Pages: 2101244
Large-Area MOVPE Growth of Topological Insulator Bi2Te3 Epitaxial Layers on i-Si(111)
Crystal Growth & Design [American Chemical Society], Volume: 21 Issue: 7 Pages: 4023-4029