Emanuela Schilirò, Patrick Fiorenza, Raffaella Lo Nigro, Bruno Galizia, Giuseppe Greco, Salvatore Di Franco, Corrado Bongiorno, Francesco La Via, Filippo Giannazzo, Fabrizio Roccaforte

Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices

Materials [MDPI], Volume: 16 Issue: 16 Pages: 5638

M Vivona, P Fiorenza, V Scuderi, F La Via, F Giannazzo, F Roccaforte

Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults

Applied Physics Letters [AIP Publishing], Volume: 123 Issue: 7

Carmen Altana, Lucia Calcagno, Caterina Ciampi, Francesco La Via, Gaetano Lanzalone, Annamaria Muoio, Gabriele Pasquali, Domenico Pellegrino, Sebastiana Puglia, Giuseppe Rapisarda, Salvatore Tudisco

Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors

Sensors [MDPI], Volume: 23 Issue: 14 Pages: 6522

Marcin Zielinski, Marc Bussel, Hugues Mank, Sylvain Monnoye, Marc Portail, Adrien Michon, Yvon Cordier, Viviana Scuderi, Francesco La Via

Evaluation of Strain in 3C-SiC/Si Epiwafers from X-Ray Diffraction Measurements

Defect and Diffusion Forum [Trans Tech Publications Ltd], Volume: 426 Pages: 65-69

Sergio Sapienza, Matteo Ferri, Luca Belsito, Diego Marini, Marcin Zielinski, Francesco La Via, Alberto Roncaglia

Correlation between Q-Factor and Residual Stress in Epitaxial 3C-SiC Double-Clamped Beam Resonators

Materials Science Forum [Trans Tech Publications Ltd], Volume: 1089 Pages: 57-61

Viviana Scuderi, Marcin Zielinski, Francesco La Via

Impact of Doping on Cross-Sectional Stress Assessment of 3C-SiC/Si Heteroepitaxy

Materials [MDPI], Volume: 16 Issue: 10 Pages: 3824

Massimo Zimbone, Maria Cantarella, Federico Giuffrida, Francesco La Via, Vittorio Privitera, Enrico Napolitani, Giuliana Impellizzeri

Laser crystallization of amorphous TiO2 on polymer

Materials Science in Semiconductor Processing [Pergamon], Volume: 157 Pages: 107328

MH Kushoro, M Rebai, F La Via, A Meli, L Meda, M Parisi, EP Cippo, O Putignano, A Trotta, M Tardocchi

Performance of a thick 250 μm silicon carbide detector: stability and energy resolution

Journal of Instrumentation [IOP Publishing], Volume: 18 Issue: 03 Pages: C03007

Manuel Kollmuss, Francesco La Via, Peter J Wellmann

Effect of Growth Conditions on the Surface Morphology and Defect Density of CS‐PVT‐Grown 3C‐SiC

Crystal Research and Technology [], Pages: 2300034

Fabrizio Roccaforte, Giuseppe Greco, Patrick Fiorenza, Salvatore Di Franco, Filippo Giannazzo, Francesco La Via, Marcin Zielinski, Hugues Mank, Valdas Jokubavicius, Rositsa Yakimova

Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC)

Applied Surface Science [North-Holland], Volume: 606 Pages: 154896

P Fiorenza, L Maiolo, G Fortunato, M Zielinski, F La Via, F Giannazzo, F Roccaforte

Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing

Journal of Applied Physics [AIP Publishing LLC], Volume: 132 Issue: 24 Pages: 245701

F Torregrosa, M Canino, F Li, F Tamarri, B Roux, S Morata, F La Via, M Zielinski, R Nipoti

Ion implantation and activation of aluminum in bulk 3C-SiC and 3C-SiC on Si

MRS Advances [Springer International Publishing], Pages: 1-6

Gaetano Calogero, Ioannis Deretzis, Giuseppe Fisicaro, Manuel Kollmuß, Francesco La Via, Salvatore F Lombardo, Michael Schöler, Peter J Wellmann, Antonino La Magna

Multiscale Simulations for Defect-Controlled Processing of Group IV Materials

Crystals [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 12 Pages: 1701

Alessandro Meli, Annamaria Muoio, Riccardo Reitano, Enrico Sangregorio, Lucia Calcagno, Antonio Trotta, Miriam Parisi, Laura Meda, Francesco La Via

Effect of the Oxidation Process on Carrier Lifetime and on SF Defects of 4H SiC Thick Epilayer for Detection Applications

Micromachines [MDPI], Volume: 13 Issue: 7 Pages: 1042

Cristiano Calabretta, Viviana Scuderi, Corrado Bongiorno, Annalisa Cannizzaro, Ruggero Anzalone, Lucia Calcagno, Marco Mauceri, Danilo Crippa, Simona Boninelli, Francesco La Via

Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC

Crystal Growth & Design [American Chemical Society], Volume: 22 Issue: 8 Pages: 4996-5003

GM Vanacore, D Chrastina, E Scalise, L Barbisan, A Ballabio, M Mauceri, F La Via, G Capitani, D Crippa, A Marzegalli, R Bergamaschini, L Miglio

Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy

Physical Chemistry Chemical Physics [Royal Society of Chemistry], Volume: 24 Issue: 39 Pages: 24487-24494

Michael Schoeler, Philipp Schuh, Grazia Litrico, Francesco La Via, Marco Mauceri, Peter J Wellmann

Characterization of protrusions and stacking faults in 3C-SiC grown by sublimation epitaxy using 3C-SiC-on-Si seeding layers

Advanced Materials Proceedings [International Association of Advanced Materials], Volume: 2 Issue: 12 Pages: 774-778

Peter Wellmann, Michael Schöler, Philipp Schuh, Mike Jennings, Fan Li, Roberta Nipoti, Andrea Severino, Ruggero Anzalone, Fabrizio Roccaforte, Massimo Zimbone, Francesco La Via

Status of 3C-SiC Growth and Device Technology

Wide Bandgap Semiconductors for Power Electronics: Materials, Devices, Applications [John Wiley & Sons],

Sergio Sapienza, Matteo Ferri, Luca Belsito, Diego Marini, Marcin Zielinski, Francesco La Via, Alberto Roncaglia

Measurement of Residual Stress and Young’s Modulus on Micromachined Monocrystalline 3C-SiC Layers Grown on< 111> and< 100> Silicon

Micromachines [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 9 Pages: 1072

Massimo Zimbone, Andrey Sarikov, Corrado Bongiorno, Anna Marzegalli, Viviana Scuderi, Cristiano Calabretta, Leo Miglio, Francesco La Via

Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries

Acta Materialia [Pergamon], Volume: 213 Pages: 116915

Mohammad Beygi, John T Bentley, Christopher L Frewin, Cary A Kuliasha, Arash Takshi, Evans K Bernardin, Francesco La Via, Jack Judy, Stephen E Saddow

Fabrication of a Monolithic Silicon Carbide Implantable Neural Interface Using Soi for Ease of Manufacture

Technology & Innovation [National Academy of Inventors], Volume: 22 Issue: 1 Pages: 105-118

Michael Schöler, Francesco La Via, Marco Mauceri, Peter Wellmann

Overgrowth of Protrusion Defects during Sublimation Growth of Cubic Silicon Carbide Using Free-Standing Cubic Silicon Carbide Substrates

Crystal Growth & Design [American Chemical Society],

M Agati, S Boninelli, C Calabretta, F Mancarella, M Mauceri, D Crippa, M Albani, R Bergamaschini, L Miglio, F La Via

Growth of thick [111]-oriented 3C-SiC films on T-shaped Si micropillars

Materials & Design [Elsevier], Pages: 109833

Arne Benjamin Renz, Fan Li, Oliver Vavasour, Peter Gammon, Tianxiang Dai, Guy William Clarke Baker, Francesco La Via, Marcin Zielinski, Luyang Zhang, Nicholas Grant, John Murphy, Philip A Mawby, Mike Jennings, Vishal Ajit Shah

Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications

Semiconductor Science and Technology [IOP Publishing],

Mohammad Beygi, William Dominguez-Viqueira, Chenyin Feng, Gokhan Mumcu, Christopher L Frewin, Francesco La Via, Stephen E Saddow

Silicon Carbide and MRI: Towards Developing a MRI Safe Neural Interface

Micromachines [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 2 Pages: 126

Matteo Hakeem Kushoro, Marica Rebai, Marco Tardocchi, Carmen Altana, Carlo Cazzaniga, Eliana De Marchi, Francesco La Via, Laura Meda, Alessandro Meli, Miriam Parisi, Enrico Perelli Cippo, Mario Pillon, Antonio Trotta, Salvo Tudisco, Giuseppe Gorini

Detector Response to DD Neutrons and Stability Measurements with 4H Silicon Carbide Detectors

Materials [Multidisciplinary Digital Publishing Institute], Volume: 14 Issue: 3 Pages: 568

Alessandro Meli, Annamaria Muoio, Antonio Trotta, Laura Meda, Miriam Parisi, Francesco La Via

Epitaxial Growth and Characterization of 4H-SiC for Neutron Detection Applications

Materials [Multidisciplinary Digital Publishing Institute], Volume: 14 Issue: 4 Pages: 976

Cristiano Calabretta, Viviana Scuderi, Ruggero Anzalone, Marco Mauceri, Danilo Crippa, Annalisa Cannizzaro, Simona Boninelli, Francesco La Via

Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100)

Materials [Multidisciplinary Digital Publishing Institute], Volume: 14 Issue: 16 Pages: 4400

MH Kushoro, M Rebai, M Dicorato, D Rigamonti, C Altana, C Cazzaniga, G Croci, G Gorini, G Lanzalone, F La Via, A Muoio, A Muraro, F Murtas, E Perelli Cippo, M Tardocchi, M Barbagallo, F Mingrone, S Tudisco, Sicilia Collaboration

Silicon Carbide characterization at the n_TOF spallation source with quasi-monoenergetic fast neutrons

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 983 Pages: 164578

Francesco La Via, Massimo Zimbone, Viviana Scuderi, Cristiano Calabretta, Corrado Bongiorno, Filippo Giannazzo, Patrick Fiorenza, Annamaria Muoio

Stacking Faults in 3C-SiC: From the Crystal Structure, to the Electrical Behavior

ECS Meeting Abstracts [IOP Publishing], Issue: 24 Pages: 1762

Paolo Finocchiaro, Luis Acosta, Clementina Agodi, Carmen Altana, Paulina Amador-Valenzuela, Ismail Boztosun, Sandro Brasolin, Giuseppe A Brischetto, Oscar Brunasso, Salvatore Calabrese, Luciano Calabretta, Daniela Calvo, Vittoria Capirossi, Francesco Cappuzzello, Diana Carbone, Manuela Cavallaro, Efrain R Chávez Lomeli, Irene Ciraldo, Grazia D’Agostino, Franck Delaunay, Haris Djapo, Carlo Ferraresi, Maria Fisichella, David C Flechas Garcia, Felice Iazzi, Laura La La Fauci, Gaetano Lanzalone, Francesco La Via, Roberto Linares, Nilberto H Medina, Paulo Mereu, Mauricio Moralles, Josè RB Oliveira, Luciano Pandola, Alfio Pappalardo, Horia Petrascu, Federico Pinna, Antonio D Russo, Diego Sartirana, Onoufrios Sgouros, Selcuk Oktay Solakci, Vasilis Soukeras, Alessandro Spatafora, Domenico Torresi, Salvatore Tudisco, Aydin Yildirim, Vinicius AB Zagatto, Numen Collaboration

The NUMEN Heavy Ion Multidetector for a Complementary Approach to the Neutrinoless Double Beta Decay

Universe [Multidisciplinary Digital Publishing Institute], Volume: 6 Issue: 9 Pages: 129

Giuseppe Fisicaro, Corrado Bongiorno, Ioannis Deretzis, Filippo Giannazzo, Francesco La Via, Fabrizio Roccaforte, Marcin Zielinski, Massimo Zimbone, Antonino La Magna

Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC

Applied Physics Reviews [AIP Publishing LLC], Volume: 7 Issue: 2 Pages: 021402

F La Via, S Tudisco, C Altana, M Boscardin, C Ciampi, GAP Cirrone, A Fazzi, D Giove, G Gorini, G Lanzalone, A Muoio, G Pasquali, G Petringa, SMR Puglia, M Rebai, A Santangelo, A Trifirò, SiCILIA Collaboration

Silicon Carbide devices for radiation detection and measurements

Journal of Physics: Conference Series [IOP Publishing], Volume: 1561 Issue: 1 Pages: 012013

P Fiorenza, E Schilirò, F Giannazzo, C Bongiorno, M Zielinski, F La Via, F Roccaforte

On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy

Applied Surface Science [North-Holland], Pages: 146656

Massimo Zimbone, Eric Gasparo Barbagiovanni, Corrado Bongiorno, Cristiano Calabretta, Lucia Calcagno, Giuseppe Fisicaro, Antonino La Magna, Francesco La Via

Generation and Termination of Stacking Faults by Inverted Domain Boundaries in 3C-SiC

Crystal Growth & Design [American Chemical Society], Volume: 20 Issue: 5 Pages: 3104-3111

Massimo Zimbone, Eric Gasparo Barbagiovanni, Corrado Bongiorno, Cristiano Calabretta, Lucia Calcagno, Giuseppe Fisicaro, Antonino La Magna, Francesco La Via

Generation and termination of stacking faults by Inverted Domain Boundary in 3C-SiC

Crystal Growth & Design [American Chemical Society],

Paolo Badalà, Simone Rascunà, Brunella Cafra, Anna Bassi, Emanuele Smecca, Massimo Zimbone, Corrado Bongiorno, Cristiano Calabretta, Francesco La Via, Fabrizio Roccaforte, Mario Saggio, Giovanni Franco, Angelo Messina, Antonino La Magna, Alessandra Alberti

Ni/4h-sic interaction and silicide formation under excimer laser annealing for ohmic contact

Materialia [Elsevier], Volume: 9 Pages: 100528

Filippo Giannazzo, Giuseppe Greco, Salvatore Di Franco, Patrick Fiorenza, Ioannis Deretzis, Antonino La Magna, Corrado Bongiorno, Massimo Zimbone, Francesco La Via, Marcin Zielinski, Fabrizio Roccaforte

Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy

Advanced Electronic Materials [], Volume: 6 Issue: 2 Pages: 1901171

Manuela Cavallaro, E Aciksoz, L Acosta, C Agodi, N Auerbach, J Bellone, R Bijker, S Bianco, D Bonanno, D Bongiovanni, T Borello, I Boztosun, V Branchina, MP Bussa, L Busso, S Calabrese, L Calabretta, A Calanna, D Calvo, F Cappuzzello, D Carbone, ER Lomeli, M Colonna, GD Agostino, N Deshmuk, PN De Faria, C Ferraresi, JL Ferreira, P Finocchiaro, M Fisichella, A Foti, G Gallo, U Garcia, G Giraudo, V Greco, A Hacisalihoglu, J Kotila, F Iazzi, R Introzzi, G Lanzalone, A Lavagno, F La Via, JA Lay, H Lenske, R Linares, G Litrico, F Longhitano, D Lo Presti, J Lubian, N Medina, DR Mendes, A Muoio, JRB Oliveira, A Pakou, L Pandola, H Petrascu, F Pinna, F Pirri, S Reito, D Rifuggiato, MRD Rodrigues, AD Russo, G Russo, G Santagati, E Santopinto, O Sgouros, SO Solakci, G Souliotis, V Soukeras, D Torresi, S Tudisco, RIM Vsevolodovna, R Wheadon, VAB Zagatto

NURE: An ERC project to study nuclear reactions for neutrinoless double beta decay

arXiv preprint arXiv:2002.02761 [],

M Cavallaro, F Cappuzzello, C Agodi, L Acosta, N Auerbach, J Bellone, R Bijker, D Bonanno, D Bongiovanni, T Borello-Lewin, I Boztosun, V Branchina, MP Bussa, S Calabrese, L Calabretta, A Calanna, D Calvo, D Carbone, ER Lomelí, A Coban, M Colonna, G d'Agostino, G De Geronimo, F Delaunay, N Deshmukh, PN De Faria, C Ferraresi, JL Ferreira, P Finocchiaro, M Fisichella, A Foti, G Gallo, U Garcia, G Giraudo, V Greco, A Hacisalihoglu, J Kotila, F Iazzi, R Introzzi, G Lanzalone, A Lavagno, F La Via, JA Lay, H Lenske, R Linares, G Litrico, F Longhitano, D Lo Presti, J Lubian, N Medina, DR Mendes, A Muoio, JRB Oliveira, A Pakou, L Pandola, H Petrascu, F Pinna, S Reito, D Rifuggiato, MRD Rodrigues, AD Russo, G Russo, G Santagati, E Santopinto, O Sgouros, SO Solakci, G Souliotis, V Soukeras, A Spatafora, D Torresi, S Tudisco, RIM Vsevolodovna, RJ Wheadon, A Yildirin, VAB Zagatto

Measuring nuclear reaction cross sections to extract information on neutrinoless double beta decay

arXiv preprint arXiv:2001.09648 [],

Manuela Cavallaro, E Aciksoz, L Acosta, C Agodi, N Auerbach, J Bellone, R Bijker, S Bianco, D Bonanno, D Bongiovanni, T Borello, I Boztosun, V Branchina, MP Bussa, L Busso, S Calabrese, L Calabretta, A Calanna, D Calvo, F Cappuzzello, D Carbone, ER Lomeli, M Colonna, GD Agostino, N Deshmuk, PN De Faria, C Ferraresi, JL Ferreira, P Finocchiaro, M Fisichella, A Foti, G Gallo, U Garcia, G Giraudo, V Greco, A Hacisalihoglu, J Kotila, F Iazzi, R Introzzi, G Lanzalone, A Lavagno, F La Via, JA Lay, H Lenske, R Linares, G Litrico, F Longhitano, D Lo Presti, J Lubian, N Medina, DR Mendes, A Muoio, JRB Oliveira, A Pakou, L Pandola, H Petrascu, F Pinna, F Pirri, S Reito, D Rifuggiato, MRD Rodrigues, AD Russo, G Russo, G Santagati, E Santopinto, O Sgouros, SO Solakci, G Souliotis, V Soukeras, D Torresi, S Tudisco, RIM Vsevolodovna, R Wheadon, VAB Zagatto

NURE: An ERC project to study nuclear reactions for neutrinoless double beta decay

arXiv preprint arXiv:2002.02761 [],

Viviana Scuderi, Cristiano Calabretta, Ruggero Anzalone, Marco Mauceri, Francesco La Via

Characterization of 4H-and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis

Materials [Multidisciplinary Digital Publishing Institute], Volume: 13 Issue: 8 Pages: 1837

M Rebai, D Rigamonti, S Cancelli, G Croci, G Gorini, E Perelli Cippo, O Putignano, M Tardocchi, C Altana, M Angelone, G Borghi, M Boscardin, C Ciampi, GAP Cirrone, A Fazzi, D Giove, L Labate, G Lanzalone, F La Via, S Loreti, A Muoio, P Ottanelli, G Pasquali, M Pillon, SMR Puglia, A Santangelo, A Trifiro, S Tudisco

New thick silicon carbide detectors: Response to 14 MeV neutrons and comparison with single-crystal diamonds

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 946 Pages: 162637

Paolo Badalà, Simone Rascunà, Brunella Cafra, Anna Bassi, Emanuele Smecca, Massimo Zimbone, Corrado Bongiorno, Cristiano Calabretta, Francesco La Via, Fabrizio Roccaforte, Mario Saggio, Giovanni Franco, Angelo Messina, Antonino La Magna, Alessandra Alberti

Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact

Materialia [Elsevier], Pages: 100528

Osvaldo Civitarese, Ivan Stekl, Jouni Suhonen

Preface: Workshop on Calculation of Double-Beta-Decay Matrix Elements (MEDEX’19)

AIP Conference Proceedings [AIP Publishing LLC], Volume: 2165 Issue: 1 Pages: 010001

Ruggero Anzalone, Massimo Zimbone, Cristiano Calabretta, Marco Mauceri, Alessandra Alberti, Riccardo Reitano, Francesco La Via

Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers.

Materials (Basel, Switzerland) [], Volume: 12 Issue: 20

Gabriele Bonaventura, Rosario Iemmolo, Valentina La Cognata, Massimo Zimbone, Francesco La Via, Maria Elena Fragalà, Maria Luisa Barcellona, Rosalia Pellitteri, Sebastiano Cavallaro

Biocompatibility between Silicon or Silicon Carbide surface and Neural Stem Cells

Scientific reports [Nature Publishing Group], Volume: 9 Issue: 1 Pages: 1-13

M Zimbone, M Zielinski, EG Barbagiovanni, C Calabretta, F La Via

3C-SiC grown on Si by using a Si1-xGex buffer layer

Journal of Crystal Growth [North-Holland], Volume: 519 Pages: 1-6

Mohammad Beygi, John T Bentley, Christopher L Frewin, Cary A Kuliasha, Arash Takshi, Evans K Bernardin, Francesco La Via, Stephen E Saddow

Fabrication of a Monolithic Implantable Neural Interface from Cubic Silicon Carbide

Micromachines [Multidisciplinary Digital Publishing Institute], Volume: 10 Issue: 7 Pages: 430

Antonino La Magna, Alessandra Alberti, Erik Barbagiovanni, Corrado Bongiorno, Michele Cascio, Ioannis Deretzis, Francesco La Via, Emanuele Smecca

Simulation of the Growth Kinetics in Group IV Compound Semiconductors

physica status solidi (a) [], Volume: 216 Issue: 10 Pages: 1800597

C Ciampi, G Pasquali, C Altana, M Bini, M Boscardin, L Calcagno, G Casini, GAP Cirrone, A Fazzi, D Giove, G Gorini, L Labate, F La Via, G Lanzalone, G Litrico, A Muoio, P Ottanelli, G Poggi, SMR Puglia, M Rebai, S Ronchin, A Santangelo, AA Stefanini, A Trifirò, S Tudisco, M Zimbone, Sicilia Collaboration

Nuclear fragment identification with ΔE-E telescopes exploiting silicon carbide detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 925 Pages: 60-69

Monia Spera, Giuseppe Greco, R Lo Nigro, Corrado Bongiorno, Filippo Giannazzo, Marcin Zielinski, Francesco La Via, Fabrizio Roccaforte

Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 295-298

Mojmír Meduňa, Thomas Kreiliger, Marco Mauceri, Marco Puglisi, Fulvio Mancarella, Francesco La Via, Danilo Crippa, Leo Miglio, Hans von Känel

X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si (0 0 1) wafers

Journal of Crystal Growth [North-Holland], Volume: 507 Pages: 70-76

S Tudisco, C Altana, M Boscardin, L Calcagno, C Ciampi

Silicon carbide for future intense luminosity nuclear physics investigations

Il nuovo cimento C [Societa italiana di fisica], Volume: 42 Issue: 2-3 Pages: 1-4

Philipp Schuh, Johannes Steiner, Francesco La Via, Marco Mauceri, Marcin Zielinski, Peter J Wellmann

Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks

Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 15 Pages: 2353

Philipp Schuh, Francesco La Via, Marco Mauceri, Marcin Zielinski, Peter J Wellmann

Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 13 Pages: 2179

Marco Masullo, Roberto Bergamaschini, Marco Albani, Thomas Kreiliger, Marco Mauceri, Danilo Crippa, Francesco La Via, Francesco Montalenti, Hans von Känel, Leo Miglio

Growth and Coalescence of 3C-SiC on Si (111) Micro-Pillars by a Phase-Field Approach

Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 19 Pages: 3223

Ruggero Anzalone, Massimo Zimbone, Cristiano Calabretta, Marco Mauceri, Alessandra Alberti, Riccardo Reitano, Francesco La Via

Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers

Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 20 Pages: 3293

Cristiano Calabretta, Marta Agati, Massimo Zimbone, Simona Boninelli, Andrea Castiello, Alessandro Pecora, Guglielmo Fortunato, Lucia Calcagno, Lorenzo Torrisi, Francesco La Via

Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers

Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 20 Pages: 3362

Massimo Zimbone, Marcin Zielinski, Corrado Bongiorno, Cristiano Calabretta, Ruggero Anzalone, Silvia Scalese, Giuseppe Fisicaro, Antonino La Magna, Fulvio Mancarella, Francesco La Via

3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate

Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 20 Pages: 3407

D Torresi, L Calabretta, A Spatafora, AD Russo, S Reito, A Foti, GD D'Agostino, V Branchina, S Calabrese, V Capirossi, F Delaunay, M Fisichella, D Calvo, M Cavallaro, O Sgouros, P Finocchiaro, I Ciraldo, F Pinna, S Burrello, J Ferretti, M Colonna, V Soukeras, O Brunasso, G Brischetto, S Brasolin, G Lanzalone, D Rifugiato, G Russo, N Deshmukh, A Hacisalihoglu, D Bonanno, H Garcia-Tecocoatzi, G Gallo, F Cappuzzello, E Santopinto, JA Lay, P Mereu, D Lo Presti, RIM Vsevolodovna, D Carbone, F Iazzi, L Pandola, F Longhitano, J Bellone, S Tudisco, F La Via, C Agodi

Challenges in double charge exchange measurements for neutrino physics

CERN Proc. [CERN], Volume: 1 Pages: 233-238

Mojmír Meduňa, Thomas Kreiliger, Marco Mauceri, Marco Puglisi, Fulvio Mancarella, Francesco La Via, Danilo Crippa, Leo Miglio, Hans von Känel

X-Ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si (001) wafers

Journal of Crystal Growth [North-Holland],

Massimo Zimbone, Marco Mauceri, Grazia Litrico, Eric Gasparo Barbagiovanni, Corrado Bongiorno, Francesco La Via

Protrusions reduction in 3C-SiC thin film on Si

Journal of Crystal Growth [North-Holland], Volume: 498 Pages: 248-257

Salvatore Tudisco, Francesco La Via, Clementina Agodi, Carmen Altana, Giacomo Borghi, Maurizio Boscardin, Giancarlo Bussolino, Lucia Calcagno, Massimo Camarda, Francesco Cappuzzello, Diana Carbone, Salvatore Cascino, Giovanni Casini, Manuela Cavallaro, Caterina Ciampi, Giuseppe Cirrone, Giacomo Cuttone, Alberto Fazzi, Dario Giove, Giuseppe Gorini, Luca Labate, Gaetano Lanzalone, Grazia Litrico, Giuseppe Longo, Domenico Lo Presti, Marco Mauceri, Roberto Modica, Maurizio Moschetti, Annamaria Muoio, Franco Musumeci, Gabriele Pasquali, Giada Petringa, Nicolò Piluso, Giacomo Poggi, Stefania Privitera, Sebastiana Puglia, Valeria Puglisi, Marica Rebai, Sabina Ronchin, Antonello Santangelo, Andrea Stefanini, Antonio Trifirò, Massimo Zimbone

SiCILIA-Silicon Carbide Detectors for Intense Luminosity Investigations and Applications.

Sensors [Multidisciplinary Digital Publishing Institute], Volume: 18 Issue: 7 Pages: 2289

G Litrico, S Tudisco, F La Via, C Altana, C Agodi, L Calcagno, F Cappuzzello, D Carbone, M Cavallaro, GAP Cirrone, G Lanzalone, A Muoio, S Privitera, V Scuderi

Silicon Carbide detectors for nuclear physics experiments at high beam luminosity

J. Phys.: Conf. Ser. [], Volume: 1056 Issue: 1 Pages: 012032

Marco Albani, Anna Marzegalli, Roberto Bergamaschini, Marco Mauceri, Danilo Crippa, Francesco La Via, Hans von Känel, Leo Miglio

Solving the critical thermal bowing in 3C-SiC/Si (111) by a tilting Si pillar architecture

Journal of Applied Physics [AIP Publishing LLC], Volume: 123 Issue: 18 Pages: 185703

M Cavallaro, F Cappuzzello, C Agodi, L Acosta, N Auerbach, J Bellone, R Bijker, D Bonanno, D Bongiovanni, T Borello-Lewin, I Boztosun, V Branchina, MP Bussa, S Calabrese, L Calabretta, A Calanna, D Calvo, D Carbone, ER Chávez Lomelí, A Coban, M Colonna, G D’Agostino, G De Geronimo, F Delaunay, N Deshmukh, PN De Faria, C Ferraresi, JL Ferreira, P Finocchiaro, M Fisichella, A Foti, G Gallo, U Garcia, G Giraudo, V Greco, A Hacisalihoglu, J Kotila, F Iazzi, R Introzzi, G Lanzalone, A Lavagno, F La Via, JA Lay, H Lenske, R Linares, G Litrico, F Longhitano, D Lo Presti, J Lubian, N Medina, DR Mendes, A Muoio, JRB Oliveira, A Pakou, L Pandola, H Petrascu, F Pinna, S Reito, D Rifuggiato, MRD Rodrigues, AD Russo, G Russo, G Santagati, E Santopinto, O Sgouros, SO Solakci, G Souliotis, V Soukeras, A Spatafora, D Torresi, S Tudisco, RIM Vsevolodovna, RJ Wheadon, A Yildirin, VAB Zagatto

Measuring nuclear reaction cross sections to extract information on neutrinoless double beta decay

Journal of Physics: Conference Series [IOP Publishing], Volume: 966 Issue: 1 Pages: 012021

Antonino La Magna, Alessandra Alberti, Erik Barbagiovanni, Corrado Bongiorno, Michele Cascio, Ioannis Deretzis, Francesco La Via, Emanuele Smecca

Simulation of the Growth Kinetics in Group IV Compound Semiconductors

physica status solidi (a) [], Pages: 1800597

P Schuh, M Schöler, M Wilhelm, Mikael Syväjärvi, G Litrico, F La Via, M Mauceri, PJ Wellmann

Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (100) seeding layers

Journal of Crystal Growth [North-Holland], Volume: 478 Pages: 159-162

T Han, S Privitera, RG Milazzo, C Bongiorno, S Di Franco, F La Via, X Song, Y Shi, M Lanza, S Lombardo

Photo-electrochemical water splitting in silicon based photocathodes enhanced by plasmonic/catalytic nanostructures

Materials Science and Engineering: B [Elsevier], Volume: 225 Pages: 128-133

Francesco Cappuzzello, C Agodi, Luis Acosta, N Auerbach, J Bellone, R Bijker, D Bonanno, D Bongiovanni, T Borello-Lewin, I Boztosun, V Branchina, Maria Pia Bussa, S Calabrese, L Calabretta, A Calanna, D Carbone, M Cavallaro, D Calvo, ER Chávez Lomelí, A Coban, Maria Colonna, Grazia D’Agostino, G Degeronimo, F Delaunay, N Deshmukh, PN de Faria, C Ferraresi, JL Ferreira, M Fisichella, A Foti, P Finocchiaro, G Gallo, U Garcia, G Giraudo, V Greco, A Hacisalihoglu, J Kotila, F Iazzi, R Introzzi, G Lanzalone, A Lavagno, F La Via, JA Lay, H Lenske, R Linares, G Litrico, F Longhitano, D Lo Presti, J Lubian, N Medina, DR Mendes, A Muoio, JRB Oliveira, A Pakou, L Pandola, H Petrascu, F Pinna, S Reito, D Rifuggiato, MRD Rodrigues, AD Russo, G Russo, G Santagati, E Santopinto, O Sgouros, SO Solakcı, G Souliotis, V Soukeras, A Spatafora, D Torresi, S Tudisco, RIM Vsevolodovna, RJ Wheadon, A Yildirin, V Zagatto

The NUMEN project@ LNS: Status and perspectives

AIP Conference Proceedings [AIP Publishing LLC], Volume: 1894 Issue: 1 Pages: 020004

M Schöler, P Schuh, G Litrico, F La Via, M Mauceri, PJ Wellmann

Evaluation of defects in 3C-SiC grown by Sublimation Epitaxy using 3C-SiC-on-Si seeding layers

The 5th International Workshop on LEDs and Solar Applications [], Pages: 6

R Anzalone, G Litrico, N Piluso, R Reitano, A Alberti, P Fiorenza, S Coffa, F La Via

Carbonization and transition layer effects on 3C-SiC film residual stress

Journal of Crystal Growth [North-Holland], Volume: 473 Pages: 11-19

Ph Schuh, M Arzig, G Litrico, F La Via, M Mauceri, PJ Wellmann

Growing bulk‐like 3C‐SiC from seeding material produced by CVD

physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600429

Rachela G Milazzo, Stefania Privitera, Grazia Litrico, Silvia Scalese, Salvatore Mirabella, Francesco La Via, Salvatore Lombardo, Emanuele Rimini

Formation, Morphology and Optical Properties of Electroless Deposited Gold Nanoparticles on 3C-SiC

The Journal of Physical Chemistry C [American Chemical Society], Volume: 121 Issue: 8 Pages: 4304-4311

Stefania MS Privitera, Grazia Litrico, Massimo Camarda, Nicolò Piluso, Francesco La Via

Electrical properties of extended defects in 4H-SiC investigated by photoinduced current measurements

Applied Physics Express [IOP Publishing], Volume: 10 Issue: 3 Pages: 036601

SMS Privitera, AM Mio, E Smecca, A Alberti, W Zhang, R Mazzarello, J Benke, C Persch, F La Via, E Rimini

Structural and electronic transitions in G e 2 S b 2 T e 5 induced by ion irradiation damage

Physical Review B [American Physical Society], Volume: 94 Issue: 9 Pages: 094103

F Cappuzzello, C Agodi, M Bondì

The nuclear matrix elements of 0vββ decay and the NUMEN project at INFN-LNS

J Phys Conf. Series [], Volume: 730 Pages: 012006

M Zimbone, G Cacciato, MA Buccheri, R Sanz, N Piluso, R Reitano, F La Via, MG Grimaldi, V Privitera

Photocatalytical activity of amorphous hydrogenated TiO 2 obtained by pulsed laser ablation in liquid

Materials Science in Semiconductor Processing [Pergamon], Volume: 42 Pages: 28-31

N Piluso, E Fontana, MA Di Stefano, G Litrico, S Privitera, A Russo, S Lorenti, S Coffa, F La Via

Optimization of Ion Implantation processes for 4H-SiC DIMOSFET

MRS Advances, available on CJO2016. doi [], Volume: 10 Pages: 1557

F La Via, G Litrico, R Anzalone, A Severino, M Salanitri, S Coffa

High growth rate 3C-SiC growth: from hetero-epitaxy to homo-epitaxy

MRS Advances [Materials Research Society], Volume: 1 Issue: 54 Pages: 3643-3647

A Muoio, C Agodi, DL Bonanno, DG Bongiovanni, S Calabrese, L Calcagno, D Carbone, M Cavallaro, F Cappuzzello, A Foti, P Finocchiaro, G Lanzalone, F La Via, F Longhitano, D Lo Presti, L Pandola, S Privitera, S Tudisco

Silicon carbide detectors study for NUMEN project

EPJ Web of Conferences [EDP Sciences], Volume: 117 Pages: 10006

R Anzalone, S Privitera, M Camarda, A Alberti, G Mannino, P Fiorenza, S Di Franco, F La Via

Interface state density evaluation of high quality hetero-epitaxial 3C–SiC (001) for high-power MOSFET applications

Materials Science and Engineering: B [Elsevier], Volume: 198 Pages: 14-19

L Calcagno, P Musumeci, M Zimbone, F La Via

Laser plasma monitored by silicon carbide detectors

Radiation Effects and Defects in Solids [Taylor & Francis], Volume: 170 Issue: 4 Pages: 303-324

R Anzalone, G D’Arrigo, M Camarda, N Piluso, F La Via

Strain evaluation and fracture properties of hetero-epitaxial single crystal 3C-SiC squared membrane

Dim [], Volume: 8 Pages: x104

Massimo Camarda, Giuseppe Fisicaro, Ruggero Anzalone, Silvia Scalese, Alessandra Alberti, Francesco La Via, Antonino La Magna, Andrea Ballo, Gianluca Giustolisi, Luigi Minafra, Francesco P Cammarata, Valentina Bravatà, Giusi I Forte, Giorgio Russo, Maria C Gilardi

Theoretical and experimental study of the role of cell-cell dipole interaction in dielectrophoretic devices: application to polynomial electrodes

Biomedical engineering online [BioMed Central], Volume: 13 Issue: 1 Pages: 1-10

Massimo Camarda, Antonino La Magna, Francesco La Via

Monte Carlo study of the early growth stages of 3C‐SiC on misoriented< 11‐20> and< 1‐100> 6H‐SiC substrates: role of step‐island interaction

physica status solidi (c) [WILEY‐VCH Verlag], Volume: 11 Issue: 11‐12 Pages: 1606-1610

N Piluso, M Camarda, F La Via

A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults

Journal of Applied Physics [AIP Publishing LLC], Volume: 116 Issue: 16 Pages: 163506

M Camarda, F La Via

A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults

Journal of Applied Physics [], Volume: 116 Issue: 16

Hans Von Känel, Fabio Isa, Claudiu V Falub, Eszter Judit Barthazy, Elisabeth Müller Gubler, Daniel Chrastina, Giovanni Isella, Thomas Kreiliger, Alfonso Gonzalez Taboada, Mojmir Meduna, Rolf Kaufmann, Antonia Neels, Alex Dommann, Philippe Niedermann, Fulvio Mancarella, Marco Mauceri, Marco Puglisi, Danilo Crippa, Francesco La Via, Ruggero Anzalone, Nicolo Piluso, Roberto Bergamaschini, Anna Marzegalli, Leo Miglio

Three-Dimensional Epitaxial Si1-XGex, Ge and SiC Crystals on Deeply Patterned Si Substrates

ECS Transactions [IOP Publishing], Volume: 64 Issue: 6 Pages: 631

Hans von Känel, Fabio Isa, Claudiu V Falub, Eszter Judit Barthazy, Elisabeth Müller Gubler, Daniel Chrastina, Giovanni Isella, Thomas Kreiliger, Alfonso Gonzalez Taboada, Mojmir Meduna, Rolf Kaufmann, Antonia Neels, Alex Dommann, Philippe Niedermann, Fulvio Mancarella, Marco Mauceri, Marco Puglisi, Danilo Crippa, Francesco La Via, Ruggero Anzalone, Nicolo Piluso, Roberto Bergamaschini, Anna Marzegalli, Leo Miglio

(Invited) Three-Dimensional Epitaxial Si1-XGex, Ge and SiC Crystals on Deeply Patterned Si Substrates

ECS Transactions [The Electrochemical Society], Volume: 64 Issue: 6 Pages: 631-648

Nicolo’ Piluso, Massimo Camarda, Ruggero Anzalone, Andrea Severino, Silvia Scalese, Francesco La Via

Analysis on 3C-SiC layer grown on pseudomorphic-Si/Si 1-x Ge x/Si (001) heterostructures.

Materials Science Forum [], Volume: 806

Stefania Privitera, Giuseppe D’Arrigo, Antonio M Mio, Nicolò Piluso, Francesco La Via, Emanuele Rimini

Electrically Trimmable Phase Change Ge 2 Sb 2 Te 5 Resistors With Tunable Temperature Coefficient of Resistance

IEEE Transactions on Electron Devices [IEEE], Volume: 61 Issue: 8 Pages: 2879-2885

L Calcagno, P Musumeci, M Cutroneo, L Torrisi, F La Via, J Ullschmied

MeV ion beams generated by intense pulsed laser monitored by Silicon Carbide detectors

Journal of Physics: Conference Series [IOP Publishing], Volume: 508 Issue: 1 Pages: 012009

Marco Mauceri, Antonino Pecora, Grazia Litrico, Carmelo Vecchio, Marco Puglisi, Danilo Crippa, Nicolo’ Piluso, Massimo Camarda, Francesco La Via

4H-SiC epitaxial layer grown on 150 mm automatic horizontal hot wall reactor PE1O6.

Materials Science Forum [],

R Anzalone, G D’Arrigo, M Camarda, N Piluso, F La Via

Fracture property and quantitative strain evaluation of hetero-epitaxial single crystal 3C-SiC membrane

Materials Research Express [IOP Publishing], Volume: 1 Issue: 1 Pages: 015912

R Anzalone, A Alberti, F La Via

Evaluation of 3C-SiC/Si residual stress and curvatures along different wafer direction

Materials Letters [North-Holland], Volume: 118 Pages: 130-133

Lorenzo Torrisi, L Calcagno, P Musumeci, M Cutroneo, F La Via, J Ullschmied

MeV ion beams generated by intense pulsed laser monitored by Silicon Carbide detectors

JOURNAL OF PHYSICS. CONFERENCE SERIES [], Volume: 508 Issue: 012009 Pages: 1-6

R Grasso, S Tudisco, A Anzalone, F Musumeci, A Scordino, A Spitaleri, R Anzalone, G D’Arrigo, F LaVia

A new position sensitive anode for plasmas diagnostic

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 720 Pages: 122-124

Stephen E Saddow, Yaroslav Koshka, Francesco La Via, Edward Sanchez, Hidezaku Tsuchida, Feng Zhao

Introduction to Silicon Carbide—Materials, Processing and Devices–ADDENDUM

Journal of Materials Research [Cambridge University Press], Volume: 28 Issue: 5 Pages: 786-786

N Piluso, R Anzalone, M Camarda, A Severino, A La Magna, G D'Arrigo, F La Via

Micro‐Raman analysis and finite‐element modeling of 3 C‐SiC microstructures

Journal of Raman Spectroscopy [], Volume: 44 Issue: 2 Pages: 299-306

Ruggero Anzalone, Massimo Camarda, Christopher Locke, Josè Carballo, Nicolò Piluso, Antonino La Magna, Alex A Volinsky, Stephen E Saddow, Francesco La Via

Stress nature investigation on heteroepitaxial 3C–SiC film on (100) Si substrates

Journal of Materials Research [Cambridge University Press], Volume: 28 Issue: 1 Pages: 129

M Cutroneo, P Musumeci, M Zimbone, L Torrisi, F La Via, D Margarone, A Velyhan, J Ullschmied, L Calcagno

High performance SiC detectors for MeV ion beams generated by intense pulsed laser plasmas

Journal of Materials Research [Cambridge University Press], Volume: 28 Issue: 1 Pages: 87

Massimo Camarda, Ruggero Anzalone, Andrea Severino, Nicolò Piluso, Andrea Canino, Francesco La Via, Antonino La Magna

Correlation between macroscopic and microscopic stress fields: Application to the 3C–SiC/Si heteroepitaxy

Journal of Materials Research [Cambridge University Press], Volume: 28 Issue: 1 Pages: 104

Francesco La Via, Giuseppe D'Arrigo, Andrea Severino, Nicolò Piluso, Marco Mauceri, Christopher Locke, Stephen E Saddow

Patterned substrate with inverted silicon pyramids for 3C–SiC epitaxial growth: A comparison with conventional (001) Si substrate

Journal of Materials Research [Cambridge University Press], Volume: 28 Issue: 1 Pages: 94

Peter Wellmann, Mikael Syväjärvi, Michael Kneissel, Rongmin Wang, P Hens, G Wagner, A Hölzing, R Hock, P Wellmann, V Jokubavicius, R Liljedahl, JW Sun, M Kaiser, S Sano, R Yakimova, S Kamiyama, M Syväjärvi, Teresa de los Arcos, Stefan Cwik, Andrian P Milanov, Vanessa Gwildies, Harish Parala, Tristan Wagner, Alexander Birkner, Detlef Rogalla, Hans-Werner Becker, Jörg Winter, Alfred Ludwig, Roland A Fischer, Anjana Devi, S Biondo, M Lazar, L Ottaviani, W Vervisch, V Le Borgne, MA El Khakani, J Duchaine, F Milesi, O Palais, D Planson, N Piluso, R Anzalone, M Camarda, A Severino, G D'Arrigo, F La Via

Editorial for E-MRS Symposium Q

Science [], Volume: 523 Pages: 1-80

A Canino, N Piluso, F La Via

Large area optical characterization of 3 and 4 inches 4H–SiC wafers

Thin solid films [Elsevier], Volume: 522 Pages: 30-32

N Piluso, R Anzalone, M Camarda, A Severino, G D'Arrigo, F La Via

Stress fields analysis in 3C–SiC free-standing microstructures by micro-Raman spectroscopy

Thin Solid Films [Elsevier], Volume: 522 Pages: 20-22

Massimo Camarda, Ruggero Anzalone, Antonino La Magna, Francesco La Via

Study of microstructure deflections and film/substrate curvature under generalized stress fields and mechanical properties

Thin Solid Films [Elsevier], Volume: 522 Pages: 26-29

Massimo Camarda

Monte Carlo study of the hetero-polytypical growth of cubic on hexagonal silicon carbide polytypes

Surface science [North-Holland], Volume: 606 Issue: 15-16 Pages: 1263-1267

I Deretzis, M Camarda, F La Via, A La Magna

Electron backscattering from stacking faults in SiC by means of\textit {ab initio} quantum transport calculations

arXiv preprint arXiv:1206.6600 [],

I Deretzis, M Camarda, F La Via, A La Magna

Electron backscattering from stacking faults in SiC by means of ab initio quantum transport calculations

Physical Review B [American Physical Society], Volume: 85 Issue: 23 Pages: 235310

Andrea Severino, Nicolò Piluso, Antonio Marino, Francesco La Via

Crystal recovery from Al‐implantation induced damaging in 3C‐SiC films

physica status solidi (RRL)–Rapid Research Letters [WILEY‐VCH Verlag], Volume: 6 Issue: 5 Pages: 226-228

R Anzalone, M Camarda, A Auditore, N Piluso, A Severino, A La Magna, G D’Arrigo, F La Via

Wafer Cut Effect on Hetero-Epitaxial 3C-SiC Film for MEMS Application

Electrochemical and Solid State Letters [IOP Publishing], Volume: 15 Issue: 6 Pages: H182

S Scalese, V Scuderi, S Bagiante, S Gibilisco, G Faraci, N Piluso, F La Via, V Privitera

Morphology and distribution of carbon nanostructures in a deposit produced by arc discharge in liquid nitrogen

Physica E: Low-dimensional Systems and Nanostructures [North-Holland], Volume: 44 Issue: 6 Pages: 1005-1008

Francesco La Via

Silicon Carbide Epitaxy

Research Signpost [],

Andrea Severino, M Mauceri, R Anzalone, A Canino, N Piluso, C Vecchio, M Camarda, F La Via

Growth and processing of heteroepitaxial 3C-SiC films for electronic devices applications

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1433

CW Locke, A Severino, F La Via, M Reyes, M Register, SE Saddow

SiC films and coatings: Amorphous polycrystalline and single crystal forms

Silicon Carbide Biotechnology [], Pages: 17-61

Massimo Camarda, Francesco La Via, Antonino La Magna

Study of the connection between stacking faults evolution and step kinetics in misoriented 4H-SiC epitaxial growths

Surface science [North-Holland], Volume: 605 Issue: 21-22 Pages: L67-L69

Massimo Camarda, Ruggero Anzalone, Giuseppe D'Arrigo, Andrea Severino, Nicolò Piluso, Andrea Canino, Francesco La Via, Antonino La Magna

Correlation between microstructure deflections and film/substrate curvature under generalized stress fields

arXiv preprint arXiv:1110.4727 [],

Andrea Severino, Christopher Locke, Francesco La Via, Stephen E Saddow

High quality 3C-SiC for MOS applications

ECS Transactions [IOP Publishing], Volume: 41 Issue: 8 Pages: 273

Andrea Severino, Christopher Locke, Francesco La Via, Stephen E Saddow

(Invited) High Quality 3C-SiC for MOS Applications

ECS Transactions [The Electrochemical Society], Volume: 41 Issue: 8 Pages: 273-282

Andrea Canino, Massimo Camarda, Francesco La Via

High power density UV optical stress for quality evaluation of 4H-SiC epitaxial layers

Electrochemical and Solid State Letters [IOP Publishing], Volume: 14 Issue: 11 Pages: H457

R Anzalone, M Camarda, A Canino, N Piluso, F La Via, G D’Arrigo

Publisher’s Note: Defect Influence on Heteroepitaxial 3C-SiC Young’s Modulus [Electrochem. Solid-State Lett., 14, H161 (2011)]

Electrochemical and Solid-State Letters [The Electrochemical Society], Volume: 14 Issue: 7 Pages: S3-S3

Andrea Severino, Christopher Locke, Ruggero Anzalone, Massimo Camarda, Nicolò Piluso, Antonino La Magna, Stephen Saddow, Giuseppe Abbondanza, Giuseppe D'Arrigo, Francesco La Via

3C-SiC film growth on Si substrates

ECS Transactions [IOP Publishing], Volume: 35 Issue: 6 Pages: 99

Ruggero Anzalone, Massimo Camarda, Giuseppe D'Arrigo, Nicolò Piluso, Andrea Severino, Andrea Canino, Antonino La Magna, Francesco La Via

Advanced residual stress analysis on the heteroepitaxial growth of 3C-SiC/Si for MEMS application

ECS Transactions [IOP Publishing], Volume: 35 Issue: 6 Pages: 123

R Anzalone, G D'arrigo, M Camarda, C Locke, SE Saddow, F La Via

Advanced residual stress analysis and FEM simulation on heteroepitaxial 3CSiC for MEMS application

Journal of microelectromechanical systems [IEEE], Volume: 20 Issue: 3 Pages: 745-752

R Anzalone, M Camarda, A Canino, N Piluso, F La Via, G D’arrigo

Defect influence on heteroepitaxial 3C-SiC Young’s modulus

Electrochemical and Solid State Letters [IOP Publishing], Volume: 14 Issue: 4 Pages: H161

Massimo Camarda, Antonino La Magna, Pietro Delugas, Francesco La Via

First Principles Investigation on the Modifications of the 4H-SiC Band Structure Due to the (4, 4) and (3, 5) Stacking Faults

Applied physics express [IOP Publishing], Volume: 4 Issue: 2 Pages: 025802

Massimo Camarda, Andrea Canino, Antonino La Magna, Francesco La Via, G Feng, T Kimoto, M Aoki, H Kawanowa

Structural and electronic characterization of (2, 3 3) bar-shaped stacking fault in 4H-SiC epitaxial layers

Applied Physics Letters [American Institute of Physics], Volume: 98 Issue: 5 Pages: 051915

Massimo Camarda, Antonino La Magna, Pietro Delugas, Francesco La Via

025802 First Principles Investigation on the Modifications of the 4H-SiC Band Structure Due to the (4, 4) and (3, 5) Stacking Faults

Applied Physics Express [], Volume: 4 Issue: 2

R Anzalone, M Camarda, A Canino, N Piluso, F La Via, G D'Arrigo

Defect Influence on Heteroepitaxial 3C-SiC Young's Modulus (vol 14, H161, 2011)

ELECTROCHEMICAL AND SOLID STATE LETTERS [ELECTROCHEMICAL SOC INC], Volume: 14 Issue: 7 Pages: S3-S3

A Severino, F La Via

Microtwin reduction in 3C–SiC heteroepitaxy

Applied Physics Letters [American Institute of Physics], Volume: 97 Issue: 18 Pages: 181916

N Piluso, A Severino, M Camarda, A Canino, A La Magna, F La Via

Optical characterization of bulk mobility in 3C‐SiC films grown on different orientation of Si substrates

AIP Conference Proceedings [American Institute of Physics], Volume: 1292 Issue: 1 Pages: 99-102

M Camarda, A Severino, A LaMagna, F La Via

Monte Carlo study of morphological surface instabilities during misoriented epitaxial growth of cubic and hexagonal polytypes

AIP Conference Proceedings [American Institute of Physics], Volume: 1292 Issue: 1 Pages: 19-22

N Piluso, A Severino, M Camarda, A Canino, A La Magna, F La Via

Optical investigation of bulk electron mobility in 3C–SiC films on Si substrates

Applied Physics Letters [American Institute of Physics], Volume: 97 Issue: 14 Pages: 142103

Massimo Camarda, Antonino La Magna, Andrea Canino, Francesco La Via

Stacking faults evolution during epitaxial growths: Role of surface the kinetics

Surface Science [North-Holland], Volume: 604 Issue: 11-12 Pages: 939-942

R Anzalone, M Camarda, C Locke, D Alquier, A Severino, M Italia, D Rodilosso, C Tringali, A La Magna, G Foti, SE Saddow, F La Via, G D’Arrigo

Low stress heteroepitaxial 3C-SiC films characterized by microstructure fabrication and finite elements analysis

Journal of The Electrochemical Society [IOP Publishing], Volume: 157 Issue: 4 Pages: H438

Andrea Canino, Massimo Camarda, Antonino La Magna, Francesco La Via

Single Shockley faults evolution under UV optical pumping

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1246

Massimo Camarda, Antonino La Magna, Pietro Delugas, Francesco LA VIA

First Principles Investigation on the Modifications of the 4H-SiC Band Structure Due to the $(4, 4) $ and $(3, 5) $ Stacking Faults

Mater. Sci. Forum [], Volume: 64 Pages: 283

F La Via, M Camarda, A La Magna

APPLIED PHYSICS REVIEWS

J. Appl. Phys [], Volume: 13511 Issue: 10.1063/1.3457840 Pages: 108

Massimo Camarda, Antonino La Magna, Andrea Canino, Francesco La Via

Evolution of Stacking Faults Defects During Epitaxial Growths: Role of Surface Kinetics

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1246

Massimo Camarda, Antonino La Magna, Andrea Severino, Francesco La Via

Extended study of the step-bunching mechanism during the homoepitaxial growth of SiC

Thin Solid Films [Elsevier], Volume: 518 Issue: 6 Pages: S159-S161

A Severino, C Bongiorno, N Piluso, M Italia, M Camarda, M Mauceri, G Condorelli, MA Di Stefano, B Cafra, A La Magna, F La Via

High-quality 6inch (111) 3C-SiC films grown on off-axis (111) Si substrates

Thin Solid Films [Elsevier], Volume: 518 Issue: 6 Pages: S165-S169

Maurizio Masi, Alessandro Fiorucci, Massimo Camarda, Antonino La Magna, Francesco La Via

Multiscale simulation for epitaxial silicon carbide growth by chlorides route

Thin solid films [Elsevier], Volume: 518 Issue: 6 Pages: S6-S11

Massimo Camarda, Andrea Canino, Andrea Severino, Antonino La Magna, Francesco La Via

Systematic first principles calculations of the effects of stacking faults defects on the 4H-SiC band structure

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1246

A Severino, C Frewin, C Bongiorno, R Anzalone, SE Saddow, F La Via

Structural defects in (100) 3C-SiC heteroepitaxy: Influence of the buffer layer morphology on generation and propagation of stacking faults and microtwins

Diamond and related materials [Elsevier], Volume: 18 Issue: 12 Pages: 1440-1449

A Severino, M Camarda, S Scalese, P Fiorenza, S Di Franco, C Bongiorno, A La Magna, F La Via

Preferential oxidation of stacking faults in epitaxial off-axis (111) 3 C-SiC films

Applied Physics Letters [American Institute of Physics], Volume: 95 Issue: 11 Pages: 111905

Massimo Camarda, Antonino La Magna, Francesco La Via

Monte Carlo study of the step flow to island nucleation transition for close packed structures

Surface Science [North-Holland], Volume: 603 Issue: 14 Pages: 2226-2229

R Anzalone, A Severino, G D’arrigo, C Bongiorno, G Abbondanza, G Foti, S Saddow, F La Via

Heteroepitaxy of 3 C-SiC on different on-axis oriented silicon substrates

Journal of Applied Physics [American Institute of Physics], Volume: 105 Issue: 8 Pages: 084910

A Severino, M Camarda, G Condorelli, LMS Perdicaro, R Anzalone, M Mauceri, A La Magna, F La Via

Effect of the miscut direction in (111) 3 C-Si C film growth on off-axis (111) Si

Applied physics letters [American Institute of Physics], Volume: 94 Issue: 10 Pages: 101907

G Litrico, G Izzo, L Calcagno, F La Via, G Foti

Low temperature reaction of point defects in ion irradiated 4H–SiC

Diamond and related materials [Elsevier], Volume: 18 Issue: 1 Pages: 39-42

F La Via, G Izzo, M Mauceri, G Pistone, G Condorelli, L Perdicaro, G Abbondanza, L Calcagno, G Foti, D Crippa

4H-SiC epitaxial layer growth by trichlorosilane (TCS)

Journal of Crystal Growth [North-Holland], Volume: 311 Issue: 1 Pages: 107-113

G Izzo, G Litrico, L Calcagno, G Foti, F La Via

Electrical properties of high energy ion irradiated 4 H-SiC Schottky diodes

Journal of Applied Physics [American Institute of Physics], Volume: 104 Issue: 9 Pages: 093711

Andrea Severino, Christopher L Frewin, Ruggero Anzalone, Corrado Bongiorno, Patrick Fiorenza, Giuseppe D'Arrigo, Filippo Giannazzo, Gaetano Foti, Francesco La Via, Stephen E Saddow

Growth of 3C-SiC on Si: Influence of Process Pressure

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 211

R Anzalone, C Bongiorno, A Severino, G D’Arrigo, G Abbondanza, G Foti, F La Via

Heteroepitaxial growth of (111) 3 C-Si C on (110) Si substrate by second order twins

Applied Physics Letters [American Institute of Physics], Volume: 92 Issue: 22 Pages: 224102

M Camarda, A La Magna, P Fiorenza, F Giannazzo, F La Via

Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study

Journal of crystal growth [North-Holland], Volume: 310 Issue: 5 Pages: 971-975

Gaetano Izzo, Grazia Litrico, Lucia Calcagno, Gaetano Foti, Francesco La Via

Compensation Effects in 7 MeV C Irradiated n-Doped 4H-SiC

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 619

Massimo Camarda, Antonino La Magna, Patrick Fiorenza, Gaetano Izzo, Francesco La Via

Theoretical Monte Carlo Study of the Formation and Evolution of Defects in the Homoepitaxial Growth of SiC

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 135

Massimo Camarda, Antonino La Magna, Francesco La Via

A kinetic Monte Carlo method on super-lattices for the study of the defect formation in the growth of close packed structures

Journal of Computational Physics [Academic Press], Volume: 227 Issue: 2 Pages: 1075-1093

L Calcagno, G Izzo, G Litrico, G Foti, F La Via, G Galvagno, M Mauceri, S Leone

Optical and electrical properties of 4H-SiC epitaxial layer grown with HCl addition

Journal of Applied Physics [American Institute of Physics], Volume: 102 Issue: 4 Pages: 043523

A Severino, G D’arrigo, C Bongiorno, S Scalese, F La Via, G Foti

Thin crystalline 3C-SiC layer growth through carbonization of differently oriented Si substrates

Journal of Applied Physics [American Institute of Physics], Volume: 102 Issue: 2 Pages: 023518

L Calcagno, A Ruggiero, P Musumeci, G Cuttone, F La Via, G Foti

Point defect production efficiency in ion irradiated 4H–SiC

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 279-282

A Severino, A La Magna, R Anzalone, C Bongiorno, E Rimini, F La Via

Effect of Mo interlayer on thermal stability of polycrystalline NiSi thin films

Journal of applied physics [American Institute of Physics], Volume: 101 Issue: 6 Pages: 063544

Danilo Crippa Francesco La Via, Stefano Leone, Marco Mauceri

Very high growth rate epitaxy processes with chlorine addition.

Materials Science Forum [], Pages: 157-160

Andrea Severino, DArrigo Giuseppe, Stefano Leone, Marco Mauceri, Giuseppe Abbondanza, Antonio Terrasi, Francesco La Via

Heteroepitaxial growth of 3C-SiC on Silicon-Porous Silicon-Silicon (SPS) substrates

ECS Transactions [IOP Publishing], Volume: 3 Issue: 5 Pages: 287

Francesco La Via, Giuseppa Galvagno, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Abbondanza, Alessandro Veneroni, Maurizio Masi, Gian Luca Valente, Danilo Crippa

4H SiC epitaxial growth with chlorine addition

Chemical vapor deposition [WILEY‐VCH Verlag], Volume: 12 Issue: 8‐9 Pages: 509-515

FABRIZIO ROCCAFORTE, FRANCESCO LA VIA, VITO RAINERI

Then, some aspects concerning the formation of low resistance (10-10 Qcm”) ohmic

SiC Materials and Devices [World Scientific], Volume: 1 Pages: 77

A Ruggiero, S Libertino, F Roccaforte, F La Via, L Calcagno

Effects of implantation defects on the carrier concentration of 6H-SiC

Applied Physics A [Springer-Verlag], Volume: 82 Issue: 3 Pages: 543-547

Francesco La Via, Giuseppa Galvagno, Andrea Firrincieli, Salvatore Di Franco, Andrea Severino, Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Abbondanza, Ferdinando Portuese, Lucia Calcagno, Gaetano Foti

High Growth Rate Process in a SiC Horizontal Reactor with HCl Addition: Structural and Electrical Characterization

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 911

F La Via, G Galvagno, F Roccaforte, F Giannazzo, S Di Franco, A Ruggiero, R Reitano, L Calcagno, G Foti, M Mauceri, S Leone, G Pistone, F Portuese, G Abbondanza, G Abbagnale, Alessandro Veneroni, F Omarini, Laura Zamolo, Maurizio Masi, GL Valente, D Crippa

High growth rate process in a SiC horizontal CVD reactor using HCl

Microelectronic engineering [Elsevier], Volume: 83 Issue: 1 Pages: 48-50

Francesco La Via, Giuseppa Galvagno, Andrea Firrincieli, Salvatore Di Franco, Andrea Severino, Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Abbondanza, Ferdinando Portuese, Lucia Calcagno, Gaetano Foti

Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 911

G Galvagno, F Roccaforte, A Ruggiero, L Calcagno, E Zanetti, M Saggio, F Portuese, F La Via

Temperature dependence of the c-axis drift mobility in 4H–SiC

Microelectronic engineering [Elsevier], Volume: 83 Issue: 1 Pages: 45-47

Fabrizio Roccaforte, Francesco La Via, Vito Raineri

Ohmic contacts to SiC

International journal of high speed electronics and systems [World Scientific Publishing Company], Volume: 15 Issue: 04 Pages: 781-820

F La Via, G Galvagno, F Roccaforte, A Ruggiero, L Calcagno

Drift mobility in 4H-SiC Schottky diodes

Applied Physics Letters [American Institute of Physics], Volume: 87 Issue: 14 Pages: 142105

L Calcagno, A Ruggiero, F Roccaforte, F La Via

Effects of annealing temperature on the degree of inhomogeneity of nickel-silicide/SiC Schottky barrier

Journal of Applied Physics [American Institute of Physics], Volume: 98 Issue: 2 Pages: 023713

F Roccaforte, S Libertino, F Giannazzo, C Bongiorno, F La Via, V Raineri

Ion irradiation of inhomogeneous Schottky barriers on silicon carbide

Journal of applied physics [American Institute of Physics], Volume: 97 Issue: 12 Pages: 123502

A Alberti, R Fronterre, F La Via, E Rimini

Effect of a Ti cap layer on the diffusion of Co atoms during CoSi2 reaction

Electrochemical and solid-state letters [The Electrochemical Society], Volume: 8 Issue: 2 Pages: G47-G50