Primary tabs
Fabrizio Roccaforte received the M.Sc. Degree in Physics from the University of Catania (Italy) in 1996, and the PhD from the University of Göttingen (Germany) in 1999. In 2000/2001 he was visiting scientist at the University of Göttingen, and advisor at STMicroelectronics (Italy). In December 2001 he joined CNR-IMM as a Researcher, where he became Senior Researcher in 2007, and Research Director in 2020. His research interests are in the field of wide band gap semiconductors (e.g., SiC, GaN,..) materials and devices processing for power electronics devices. He is co-author of more than 300 papers in international journals and conference proceedings, several review articles, 10 book chapters, 3 patents, and he has given several invited talks and lectures on SiC and GaN at international conferences. He has been chairman of international conferences on WBG semiconductors (HeteroSiC-WASMPE 2009, WOCSDICE 2011, ICSCRM2015), and he is member of the Steering Committee of the ECSCRM and EXMATEC. He is or has been responsible for the CNR-IMM unit of European and National projects on wide band gap semiconductors (Marie Curie RTN MANSiC, Marie Curie ITN NetFISiC, Eniac-JU Last Power, PON Ambition Power, ECSEL-JU WInSiC4AP, Reaction, EleGaNTe, GaN4AP) bilateral collaborations with other European institutions, and industrial research contracts.
Scientific Productions
Applied Surface Science [North-Holland], Volume: 679 Pages: 161316
Applied Surface Science [North-Holland], Volume: 674 Pages: 160885
arXiv preprint arXiv:2410.19545 [],
AIP Advances [AIP Publishing], Volume: 14 Issue: 10
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 362 Pages: 7-12
Effects of Sulfurization on the Properties of 4H-SiC Schottky Contacts
Scientific Books of Abstracts [Trans Tech Publications Ltd], Volume: 8 Pages: 97-99
Scientific Books of Abstracts [Trans Tech Publications Ltd], Volume: 8 Pages: 678-679
Scientific Books of Abstracts [Trans Tech Publications Ltd], Volume: 8 Pages: 394-395
Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 361 Pages: 27-32
Electrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin Wafers
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 359 Pages: 97-103
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 358 Pages: 45-49
Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs
IEEE Electron Device Letters [IEEE],
Applied Physics Letters [AIP Publishing], Volume: 124 Issue: 24
Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition
Materials Science in Semiconductor Processing [Pergamon], Volume: 174 Pages: 108244
Materials [MDPI], Volume: 17 Issue: 8 Pages: 1908
Schottky contacts on sulfurized silicon carbide (4H-SiC) surface
Applied Physics Letters [AIP Publishing], Volume: 124 Issue: 10
Interface Properties of MoS2 van der Waals Heterojunctions with GaN
Nanomaterials [MDPI], Volume: 14 Issue: 2 Pages: 133
Applied Physics Letters [AIP Publishing], Volume: 124 Issue: 1
Materials Science in Semiconductor Processing [Pergamon], Volume: 169 Pages: 107866
Isolation of bidimensional electron gas in AlGaN/GaN heterojunction using Ar ion implantation
Materials Science in Semiconductor Processing [Pergamon], Volume: 168 Pages: 107871
Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition
Nanomaterials [MDPI], Volume: 13 Issue: 21 Pages: 2837
Microelectronic Engineering [Elsevier], Pages: 112103
Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2
Applied Surface Science [North-Holland], Volume: 630 Pages: 157476
Crystals [MDPI], Volume: 13 Issue: 9 Pages: 1309
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices
Materials [MDPI], Volume: 16 Issue: 16 Pages: 5638
Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults
Applied Physics Letters [AIP Publishing], Volume: 123 Issue: 7
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1090 Pages: 113-117
Exploring UV-Laser Effects on Al-Implanted 4H-SiC
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 342 Pages: 85-89
Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates
Microelectronic Engineering [Elsevier], Volume: 276 Pages: 112009
Microelectronic Engineering [Elsevier], Pages: 111967
physica status solidi (RRL)–Rapid Research Letters [], Pages: 2300218
Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC)
Applied Surface Science [North-Holland], Volume: 606 Pages: 154896
Journal of Applied Physics [AIP Publishing LLC], Volume: 132 Issue: 24 Pages: 245701
Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs
Applied Physics Letters [AIP Publishing LLC], Volume: 121 Issue: 23 Pages: 233506
A Low Temperature Growth of Cu2O Thin Films as Hole Transporting Material for Perovskite Solar Cells
Materials [MDPI], Volume: 15 Issue: 21 Pages: 7790
Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors
Journal of Applied Physics [AIP Publishing LLC], Volume: 132 Issue: 16 Pages: 165105
Advanced Materials Interfaces [], Pages: 2201502
ACS Applied Electronic Materials [American Chemical Society], Volume: 4 Issue: 9 Pages: 4514-4520
Esaki Diode Behavior in Highly Uniform MoS2/Silicon Carbide Heterojunctions
Advanced Materials Interfaces [], Volume: 9 Issue: 22 Pages: 2200915
ACS Applied Materials & Interfaces [American Chemical Society], Volume: 14 Issue: 31 Pages: 36287-36287
Semiconductor Science and Technology [IOP Publishing],
Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures
Applied Surface Science [North-Holland], Volume: 579 Pages: 152136
Materials [Multidisciplinary Digital Publishing Institute], Volume: 15 Issue: 3 Pages: 830
Towards ballistic vertical transistors by graphene integration with nitride semiconductors
Il nuovo cimento C [Societa italiana di fisica], Volume: 45 Issue: 6 Pages: 1-4
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 2 Pages: 182
ACS Applied Electronic Materials [American Chemical Society],
Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures
Semiconductor Science and Technology [IOP Publishing], Volume: 37 Issue: 1 Pages: 015012
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 12 Pages: 3316
Status of 3C-SiC Growth and Device Technology
Wide Bandgap Semiconductors for Power Electronics: Materials, Devices, Applications [John Wiley & Sons],
Applied Physics Letters [AIP Publishing LLC], Volume: 119 Issue: 9 Pages: 093103
arXiv preprint arXiv:2108.09542 [],
Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC
Journal of Physics D: Applied Physics [IOP], Volume: 54 Issue: 44 Pages: 445107
Applied Surface Science [North-Holland], Volume: 557 Pages: 149752
ACS Applied Materials & Interfaces [American Chemical Society], Volume: 13 Issue: 26 Pages: 31248-31259
Journal of Applied Physics [AIP Publishing LLC], Volume: 129 Issue: 23 Pages: 234501
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 6 Pages: 1626
Barrier Height Tuning in Ti/4H-SiC Schottky diodes
Solid-State Electronics [Pergamon], Volume: 186 Pages: 108042
AIP Advances [AIP Publishing LLC], Volume: 10 Issue: 12 Pages: 125017
arXiv e-prints [], Pages: arXiv: 2012.08829
Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 54 Issue: 5 Pages: 055101
Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene
Carbon [Pergamon], Volume: 169 Pages: 172-181
Nanotechnology [IOP Publishing], Volume: 32 Issue: 1 Pages: 015705
Technologies for Normally-off GaN HEMTs
Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices [Wiley‐VCH Verlag GmbH & Co. KGaA], Pages: 137-175
Applied Physics Letters [AIP Publishing LLC], Volume: 117 Issue: 10 Pages: 103502
Semiconductor Science and Technology [IOP Publishing], Volume: 35 Issue: 10 Pages: 105004
Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide
Applied Physics Letters [AIP Publishing LLC], Volume: 117 Issue: 1 Pages: 013502
Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC
Applied Physics Reviews [AIP Publishing LLC], Volume: 7 Issue: 2 Pages: 021402
Applied Surface Science [North-Holland], Pages: 146656
Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [American Vacuum Society], Volume: 38 Issue: 3 Pages: 032410
Journal of Crystal Growth [North-Holland], Pages: 125624
Ni/4h-sic interaction and silicide formation under excimer laser annealing for ohmic contact
Materialia [Elsevier], Volume: 9 Pages: 100528
physica status solidi (RRL)–Rapid Research Letters [], Volume: 14 Issue: 2 Pages: 1900399
Advanced Electronic Materials [], Volume: 6 Issue: 2 Pages: 1901171
physica status solidi (RRL)–Rapid Research Letters [], Volume: 14 Issue: 2 Pages: 1900393
Nanotechnology [IOP Publishing], Volume: 31 Issue: 12 Pages: 125203
Comparison between Single Al2O3 or HfO2 Single Dielectric Layers and their Nanolaminated Systems
Advanced Materials Letters [International Association of Advanced Materials], Volume: 11 Issue: 1 Pages: 1-5
Nanotechnology [IOP Publishing],
Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact
Materialia [Elsevier], Pages: 100528
High performance graphene/AlGaN/GaN Schottky junctions for hot electron transistors
ACS Applied Electronic Materials [American Chemical Society], Volume: 1 Issue: 11 Pages: 2342-2354
Materials Science in Semiconductor Processing [Pergamon], Volume: 97 Pages: 35-39
Materials Science in Semiconductor Processing [Pergamon], Volume: 97 Pages: 62-66
An Overview of Normally-Off GaN-Based High Electron Mobility Transistors
Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 10 Pages: 1599
Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride
Materials Science in Semiconductor Processing [Pergamon], Volume: 94 Pages: 164-170
Advanced Materials Interfaces [], Volume: 6 Issue: 10 Pages: 1900097
Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 153-157
Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 274-279
Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering
Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 290-294
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon
Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 295-298
Energies [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 14 Pages: 2655
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings
Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 21 Pages: 3468
ADVANCED MATERIALS INTERFACES [Wiley-VCH Verlag GmbH & Co. KGaA.], Pages: 1-11
physica status solidi (RRL)–Rapid Research Letters [], Issue: 1900393
Physics and technology of gallium nitride materials for power electronics
LA RIVISTA DEL NUOVO CIMENTO [Italian Physical Society], Volume: 41 Issue: 12 Pages: 625-681
AIP Conference Proceedings [AIP Publishing LLC], Volume: 1990 Issue: 1 Pages: 020008
Nanotechnology [IOP Publishing], Volume: 29 Issue: 39 Pages: 395702
Barrier inhomogeneity of Ni Schottky contacts to bulk GaN
physica status solidi (a) [], Volume: 215 Issue: 9 Pages: 1700613
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures
Materials Science in Semiconductor Processing [Pergamon], Volume: 78 Pages: 111-117
physica status solidi (a) [], Volume: 215 Issue: 10 Pages: 1700653
Review of technology for normally-off HEMTs with p-GaN gate
Materials Science in Semiconductor Processing [Pergamon], Volume: 78 Pages: 96-106
Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors
Materials Science in Semiconductor Processing [Pergamon], Volume: 78 Pages: 38-42
Japanese Journal of Applied Physics [IOP Publishing], Volume: 57 Issue: 5 Pages: 050307
Materials Science Forum [], Volume: 924 Pages: 913
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures
Materials Science in Semiconductor Processing [Pergamon],
Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
Microelectronic Engineering [Elsevier], Volume: 187 Pages: 66-77
Temperature-dependent Fowler-Nordheim electron barrier height in SiO 2/4H-SiC MOS capacitors
Materials Science in Semiconductor Processing [Pergamon],
Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes
ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 6 Issue: 10 Pages: P741
Applied Surface Science [North-Holland], Volume: 420 Pages: 331-335
ACS applied materials & interfaces [American Chemical Society], Volume: 9 Issue: 40 Pages: 35383-35390
Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes
ECS Meeting Abstracts [IOP Publishing], Issue: 31 Pages: 1325
physica status solidi (a) [], Volume: 214 Issue: 9 Pages: 1600764
Conductive Atomic Force Microscopy: Applications in Nanomaterials [John Wiley & Sons],
ACS Applied Materials & Interfaces [American Chemical Society], Volume: 9 Issue: 27 Pages: 23164-23174
Channel Mobility in GaN Hybrid MOS-HEMT Using SiO₂ as Gate Insulator
IEEE Transactions on Electron Devices [IEEE],
Channel Mobility in GaN Hybrid MOS-HEMT Using SiO 2 as Gate Insulator
IEEE Transactions on Electron Devices [IEEE], Volume: 64 Issue: 7 Pages: 2893-2899
Carbon [Pergamon], Volume: 116 Pages: 722-732
Ti/Al‐based contacts to p‐type SiC and GaN for power device applications
physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600357
Graphene integration with nitride semiconductors for high power and high frequency electronics
physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600460
Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices
physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600366
ACS Applied Materials & Interfaces [American Chemical Society], Volume: 9 Issue: 8 Pages: 7761-7771
Advances in the fabrication of graphene transistors on flexible substrates
Beilstein Journal of Nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 467-474
Beilstein Journal of Nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 418-424
Journal of Applied Physics [AIP Publishing LLC], Volume: 121 Issue: 4 Pages: 045701
Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 254-263
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [American Vacuum Society], Volume: 35 Issue: 1 Pages: 01B140
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 35 Issue: 1 Pages: 01A101
Journal of Applied Physics [AIP Publishing LLC], Volume: 120 Issue: 20 Pages: 205701
Ti/Al‐based contacts to p‐type SiC and GaN for power device applications
physica status solidi (a) [],
physica status solidi (RRL)–Rapid Research Letters [WILEY‐VCH Verlag Berlin GmbH], Volume: 10 Issue: 11 Pages: 797-801
Thin Solid Films [Elsevier], Volume: 617 Pages: 138-142
Thin Solid Films [Elsevier], Volume: 617 Pages: 138-142
Ohmic contacts to Gallium Nitride materials
Applied Surface Science [North-Holland], Volume: 383 Pages: 324-345
Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices
physica status solidi (a) [],
Substrate and atmosphere influence on oxygen p-doped graphene
Carbon [Pergamon], Volume: 107 Pages: 696-704
Graphene integration with nitride semiconductors for high power and high frequency electronics
physica status solidi (a) [],
Effect of air on oxygen p‐doped graphene on SiO2
physica status solidi (a) [], Volume: 213 Issue: 9 Pages: 2341-2344
AIP Advances [AIP Publishing LLC], Volume: 6 Issue: 7 Pages: 075021
Applied Physics Letters [AIP Publishing LLC], Volume: 109 Issue: 1 Pages: 012102
IEEE Transactions on Electron Devices [IEEE], Volume: 63 Issue: 7 Pages: 2735 - 2741
Challenges in graphene integration for high-frequency electronics
AIP Conference Proceedings [AIP Publishing LLC], Volume: 1749 Issue: 1 Pages: 020004
Nanotechnology [IOP Publishing], Volume: 27 Issue: 31 Pages: 315701
Laminated Al 2 O 3–HfO 2 layers grown by atomic layer deposition for microelectronics applications
Thin Solid Films [Elsevier], Volume: 601 Pages: 68-72
Laminated Al2O3–HfO2 layers grown by atomic layer deposition for microelectronics applications
Thin Solid Films [Elsevier], Volume: 601 Pages: 68-72
Electrical properties of SiO 2/SiC interfaces on 2°-off axis 4H-SiC epilayers
Applied Surface Science [North-Holland], Volume: 364 Pages: 892-895
Current injection from metal to MoS 2 probed at nanoscale by conductive atomic force microscopy
Materials Science in Semiconductor Processing [Pergamon], Volume: 42 Pages: 174-178
physica status solidi (a) [],
Graphene p-type doping and stability by thermal treatments in molecular oxygen controlled atmosphere
The Journal of Physical Chemistry C [American Chemical Society], Volume: 119 Issue: 39 Pages: 22718-22723
Nanoscale inhomogeneity of the Schottky barrier and resistivity in MoS 2 multilayers
Physical Review B [American Physical Society], Volume: 92 Issue: 8 Pages: 081307
Current mapping in graphene contacts to AlGaN/GaN heterostructures
Nanoscience and Nanometrology [Science Publishing Group], Volume: 1 Issue: 1 Pages: 1
Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC
Journal of Applied Physics [AIP Publishing LLC], Volume: 118 Issue: 3 Pages: 035705
Materials Chemistry and Physics [Elsevier], Volume: 162 Pages: 461-468
physica status solidi (c) [WILEY‐VCH Verlag], Volume: 12 Issue: 7 Pages: 980-984
Visible Blind 4H-SiC P $^{+} $-N UV Photodiode Obtained by Al Implantation
IEEE Photonics Journal [IEEE], Volume: 7 Issue: 3 Pages: 1-6
physica status solidi (a) [], Volume: 212 Issue: 5 Pages: 1091-1098
Applied Physics Letters [AIP Publishing LLC], Volume: 106 Issue: 14 Pages: 142903
Nanoscale electrical characterization of graphene contacts to AlGaN/GaN heterostructures
physica status solidi (c) [WILEY‐VCH Verlag], Volume: 11 Issue: 11‐12 Pages: 1551-1555
F. Giannazzo”, I. Deretzis", A. La Magna', G. Nicotra', C. Spinella"
HeteroSiC & WASMPE 2013 [Trans Tech Publications Ltd], Volume: 806 Pages: 103-107
Applied Physics Letters [AIP Publishing LLC], Volume: 105 Issue: 14 Pages: 142108
Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density
Applied surface science [North-Holland], Volume: 314 Pages: 546-551
Challenges for energy efficient wide band gap semiconductor power devices
physica status solidi (a) [], Volume: 211 Issue: 9 Pages: 2063-2071
Applied Physics Letters [AIP Publishing LLC], Volume: 105 Issue: 6 Pages: 063117
Thin Solid Films [Elsevier], Volume: 563 Pages: 50-55
ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 3 Issue: 8 Pages: P285
Microscopic mechanisms of graphene electrolytic delamination from metal substrates
Applied Physics Letters [American Institute of Physics], Volume: 104 Issue: 23 Pages: 233105
Semiconductor Science and Technology [IOP Publishing], Volume: 29 Issue: 7 Pages: 075018
Recent advances on dielectrics technology for SiC and GaN power devices
Applied Surface Science [North-Holland], Volume: 301 Pages: 9-18
Journal of crystal growth [North-Holland], Volume: 393 Pages: 150-155
Applied Physics A [Springer Berlin Heidelberg], Volume: 115 Issue: 1 Pages: 333-339
Applied Physics A [Springer Berlin Heidelberg], Volume: 115 Issue: 1 Pages: 333-339
Applied surface science [North-Holland], Volume: 291 Pages: 53-57
Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale
Nanoscale [Royal Society of Chemistry], Volume: 6 Issue: 15 Pages: 8671-8680
Nanotechnology [IOP Publishing], Volume: 25 Issue: 2 Pages: 025201
Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 20 Pages: 201604
SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3
Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 15 Pages: 153508
Surface and Coatings Technology [Elsevier], Volume: 230 Pages: 152-162
High permittivity cerium oxide thin films on AlGaN/GaN heterostructures
Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 11 Pages: 112905
Journal of Applied Physics [American Institute of Physics], Volume: 114 Issue: 8 Pages: 083717
physica status solidi c [WILEY‐VCH Verlag], Volume: 10 Issue: 7‐8 Pages: 1188-1192
ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 2 Issue: 8 Pages: N3006
A look underneath the SiO2/4H-SiC interface after N2O thermal treatments
Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 4 Issue: 1 Pages: 249-254
Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 4 Issue: 1 Pages: 234-242
Nanoscale Probing of Interfaces in GaN for Devices Applications
ECS Transactions [IOP Publishing], Volume: 50 Issue: 3 Pages: 439
Comparison of Si, Sapphire, SiC, and GaN Substrates for HEMT Epitaxy
ECS Transactions [IOP Publishing], Volume: 50 Issue: 3 Pages: 163
Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC
Physical Review B [American Physical Society], Volume: 86 Issue: 23 Pages: 235422
Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 19 Pages: 193501
Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures
Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 17 Pages: 172901
Journal of Applied Physics [American Institute of Physics], Volume: 112 Issue: 8 Pages: 084501
Critical issues for interfaces to p-type SiC and GaN in power devices
Applied surface science [North-Holland], Volume: 258 Issue: 21 Pages: 8324-8333
Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures
Applied Physics Letters [American Institute of Physics], Volume: 100 Issue: 6 Pages: 063511
Applied Physics Letters [], Volume: 99 Issue: 25 Pages: 259901
Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN
Journal of Applied Physics [American Institute of Physics], Volume: 110 Issue: 12 Pages: 123703
Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC
Nanoscale research letters [SpringerOpen], Volume: 6 Issue: 1 Pages: 1-6
Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 132
Nanoscale characterization of electrical transport at metal/3C-SiC interfaces
Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 120
Schottky barrier inhomogeneities in nickel silicide transrotational contacts
Applied Physics Express [IOP Publishing], Volume: 4 Issue: 11 Pages: 115701
AIP Conference Proceedings [American Institute of Physics, American Institute of Physics 1 Physics Ellipse, College Park, MD 20740, United States 2 Huntington Quadrangle Melville NY 11747-4502 United States], Volume: 1292 Issue: 1
Temperature and light induced effects on the capacitance of 4H-SiC Schottky photodiodes
IEEE Sensors Journal [IEEE], Volume: 12 Issue: 5 Pages: 1127-1130
Temperature and light induced effects on the capacitance of 4H-SiC Schottky photodiodes
IEEE Sensors Journal [IEEE], Volume: 12 Issue: 5 Pages: 1127-1130
Applied physics letters [American Institute of Physics], Volume: 99 Issue: 7 Pages: 072117
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 44 Issue: 25 Pages: 255302
Structural and transport properties in alloyed Ti
Journal of physics. D, Applied physics [Institute of Physics], Volume: 44 Issue: 25
Nanoscale probing of dielectric breakdown at SiO 2/3 C-SiC interfaces
Journal of Applied Physics [American Institute of Physics], Volume: 109 Issue: 1 Pages: 013707
Interdigit 4H-SiC vertical Schottky diode for betavoltaic applications
IEEE transactions on electron devices [IEEE], Volume: 58 Issue: 3 Pages: 593-599
Interdigit 4H-SiC vertical Schottky diode for betavoltaic applications
IEEE Transactions on Electron Devices [IEEE], Volume: 58 Issue: 3 Pages: 593-599
Evolution of the electrical characteristics of Pt/3C‐SiC Schottky contacts upon thermal annealing
AIP Conference Proceedings [American Institute of Physics], Volume: 1292 Issue: 1 Pages: 75-78
Impact of Morphological Features on the Dielectric Breakdown at SiO 2/3 C‐SiC Interfaces
AIP Conference Proceedings [American Institute of Physics], Volume: 1292 Issue: 1 Pages: 47-50
Surface and interface issues in wide band gap semiconductor electronics
Applied Surface Science [North-Holland], Volume: 256 Issue: 19 Pages: 5727-5735
Applied Physics A [Springer-Verlag], Volume: 100 Issue: 1 Pages: 197-202
On the aging effects of 4H-SiC Schottky photodiodes under high intensity mercury lamp irradiation
IEEE Photonics Technology Letters [IEEE], Volume: 22 Issue: 11 Pages: 775-777
IOP Conference Series: Materials Science and Engineering [IOP Publishing], Volume: 6 Issue: 1 Pages: 012032
Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC
Solid State Phenomena [], Volume: 862 Issue: 156 Pages: 493
Highly efficient low reverse biased 4H-SiC Schottky photodiodes for UV-light detection
IEEE Photonics Technology Letters [IEEE], Volume: 21 Issue: 23 Pages: 1782-1784
Toward an ideal Schottky barrier on 3 C-SiC
Applied Physics Letters [American Institute of Physics], Volume: 95 Issue: 8 Pages: 081907
Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation
Journal of Applied Physics [American Institute of Physics], Volume: 106 Issue: 2 Pages: 023703
Nanoscale current transport through Schottky contacts on wide bandgap semiconductors
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 27 Issue: 2 Pages: 789-794
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 42 Issue: 7 Pages: 075304
Improved Ni/3 C-SiC contacts by effective contact area and conductivity increases at the nanoscale
Applied Physics Letters [American Institute of Physics], Volume: 94 Issue: 11 Pages: 112104
Atomic force microscopy study of the kinetic roughening in nanostructured gold films on SiO2
Nanoscale research letters [SpringerOpen], Volume: 4 Issue: 3 Pages: 262-268
Normal and abnormal grain growth in nanostructured gold film
Journal of Applied Physics [American Institute of Physics], Volume: 105 Issue: 5 Pages: 054311
Nanoscale Research Letters [Directory of Open Access Journals], Volume: 4 Issue: 3 Pages: 262-268
Thermodynamic Properties of Supported and Embedded Metallic Nanocrystals: Gold on/in SiO2
Nanoscale research letters [SpringerOpen], Volume: 3 Issue: 11 Pages: 454-460
Journal of Applied Physics [American Institute of Physics], Volume: 104 Issue: 9 Pages: 093706
Microstructure of Au nanoclusters formed in and on SiO 2
Superlattices and Microstructures [Academic Press], Volume: 44 Issue: 4-5 Pages: 588-598
Journal of Applied Physics [American Institute of Physics], Volume: 104 Issue: 2 Pages: 024310
Applied Physics Letters [American Institute of Physics], Volume: 92 Issue: 25 Pages: 252101
Electro-optical response of ion-irradiated 4 H-Si C Schottky ultraviolet photodetectors
Applied Physics Letters [American Institute of Physics], Volume: 92 Issue: 9 Pages: 093505
Schottky Barrier Lowering in 4H-SiC Schottky UV Detector
Materials Science Forum [], Volume: 768 Issue: 600 Pages: 1215
Materials Science Forum [], Volume: 768 Issue: 600 Pages: 603
Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier
Materials Science Forum [], Volume: 768 Issue: 600 Pages: 1341
Electrical properties of self-assembled nano-Schottky diodes
Journal of Nanomaterials [Hindawi], Volume: 2008
Linköping University Electronic Press
Policy [], Volume: 2007 Issue: 2006 Pages: 2005
Nanoscale Research Letters [Directory of Open Access Journals], Volume: 3 Issue: 11 Pages: 454-460
Barrier inhomogeneity and electrical properties of Pt∕ Ga N Schottky contacts
Journal of Applied Physics [American Institute of Physics], Volume: 102 Issue: 11 Pages: 113701
Acceptor, compensation, and mobility profiles in multiple Al implanted 4 H‐Si C
Applied Physics Letters [American Institute of Physics], Volume: 91 Issue: 20 Pages: 202104
Photocurrent gain in 4 H-Si C interdigit Schottky UV detectors with a thermally grown oxide layer
Applied physics letters [American Institute of Physics], Volume: 90 Issue: 22 Pages: 223507
Nanoscale Research Letters [SpringerOpen], Volume: 2 Issue: 5 Pages: 240-247
Self-organization of Au nanoclusters on the SiO 2 surface induced by 200keV-Ar+ irradiation
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 810-814
Quantitative determination of depth carrier profiles in ion-implanted Gallium Nitride
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 336-339
Self-organization of gold nanoclusters on hexagonal SiC and Si O 2 surfaces
Journal of applied physics [American Institute of Physics], Volume: 101 Issue: 6 Pages: 064306
Microelectronic engineering [Elsevier], Volume: 84 Issue: 3 Pages: 450-453
Temperature behavior of inhomogeneous Pt∕ Ga N Schottky contacts
Applied Physics Letters [American Institute of Physics], Volume: 90 Issue: 9 Pages: 092119
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 945-948
Nanoscale Research Letters [Directory of Open Access Journals], Volume: 2 Issue: 5 Pages: 240-247
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 545-548
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 571-574
High efficiency 4H-SiC Schottky UV-photodiodes using self-aligned semitransparent contacts
Superlattices and Microstructures [Academic Press], Volume: 41 Issue: 1 Pages: 29-35
SELF-ORGANIZATION OF GOLD NANOCLUSTERS ON HEXAGONAL SIC AND SIO 2 SURFACES
JOURNAL OF APPLIED PHYSICS [American Institute of Physics], Volume: 101 Issue: 6
Nanoscale voltage tunable tunnel rectifier by gold nanostructures embedded in Si O 2
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 26 Pages: 263108
Temperature dependence of the specific resistance in Ti∕ Al∕ Ni∕ Au contacts on n-type GaN
Journal of applied physics [American Institute of Physics], Volume: 100 Issue: 12 Pages: 123706
Size-dependent Schottky Barrier Height in self-assembled gold nanoparticles
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 24 Pages: 243113
Superlattices and Microstructures [Academic Press], Volume: 40 Issue: 4-6 Pages: 373-379
High responsivity 4 H-Si C Schottky UV photodiodes based on the pinch-off surface effect
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 8 Pages: 081111
Nanoscale carrier transport in Ti∕ Al∕ Ni∕ Au Ohmic contacts on AlGaN epilayers grown on Si (111)
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 2 Pages: 022103
Transport localization in heterogeneous Schottky barriers of quantum-defined metal films
EPL (Europhysics Letters) [IOP Publishing], Volume: 74 Issue: 4 Pages: 686
Effects of implantation defects on the carrier concentration of 6H-SiC
Applied Physics A [Springer-Verlag], Volume: 82 Issue: 3 Pages: 543-547
Defects and electrical behavior in 1 MeV Si+-ion-irradiated 4 H–Si C Schottky diodes
Journal of applied physics [American Institute of Physics], Volume: 99 Issue: 1 Pages: 013515
High growth rate process in a SiC horizontal CVD reactor using HCl
Microelectronic engineering [Elsevier], Volume: 83 Issue: 1 Pages: 48-50
Temperature dependence of the c-axis drift mobility in 4H–SiC
Microelectronic engineering [Elsevier], Volume: 83 Issue: 1 Pages: 45-47
International journal of high speed electronics and systems [World Scientific Publishing Company], Volume: 15 Issue: 04 Pages: 781-820
Drift mobility in 4H-SiC Schottky diodes
Applied Physics Letters [American Institute of Physics], Volume: 87 Issue: 14 Pages: 142105
Journal of Applied Physics [American Institute of Physics], Volume: 98 Issue: 2 Pages: 023713
Ion irradiation of inhomogeneous Schottky barriers on silicon carbide
Journal of applied physics [American Institute of Physics], Volume: 97 Issue: 12 Pages: 123502
Interaction between dislocations and He-implantation-induced voids in GaN epitaxial layers
Applied Physics Letters [American Institute of Physics], Volume: 86 Issue: 21 Pages: 211911
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 729-732
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 933-936
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 429-432
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 67-72
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 485-488
Consideration on the extrapolation of the low insulator field TDDB in 4H-SiC power MOSFETs
2023 IEEE International Reliability Physics Symposium (IRPS) [IEEE], Pages: 1-4
Carrot-like crystalline defects on the 4H-SiC powerMOSFET yield and reliability
2023 IEEE International Reliability Physics Symposium (IRPS) [IEEE], Pages: 1-5
Identification of Interface States responsible for VTH Hysteresis in packaged SiC MOSFETs
2022 IEEE International Reliability Physics Symposium (IRPS) [IEEE], Pages: 5B. 3-1-5B. 3-6
SiO2/4H-SiC interfacial chemistry as origin of the threshold voltage instability in power MOSFETs
2022 IEEE International Reliability Physics Symposium (IRPS) [IEEE], Pages: 3B. 3-1-3B. 3-5
High Temperature Etching for Threading Dislocation Investigation on GaN Epi-Layer
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 18-22
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 160-164
Ni/Heavily-Doped 4H-SiC Schottky Contacts
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 411-416
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 400-405
Correlation between MOSFETs breakdown and 4H-SiC epitaxial defects
2021 IEEE International Reliability Physics Symposium (IRPS) [IEEE], Pages: 1-6
Study of behavior of p-gate in Power GaN under positive voltage
2020 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE) [IEEE], Pages: 1-6
2020 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE) [IEEE], Pages: 1-6
Current Transport Mechanisms in Au-Free Metallizations for CMOS Compatible GaN HEMT Technology
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1004 Pages: 725-730
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1004 Pages: 433-438
WInSiC4AP: Wide Band Gap Innovative SiC for Advanced Power
2019 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE) [IEEE], Pages: 1-6
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 230-235
Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 407-411
Fabrication and Characterization of Ohmic Contacts to 3C-SiC Layers Grown on Silicon
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 485-489
Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 353-356
Electrical Properties of Thermal Oxide on 3C-SiC Layers Grown on Silicon
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 479-482
2018 International Semiconductor Conference (CAS) [IEEE], Pages: 7-16
Temperature-Dependence Study of the Gate Current SiO2/4H-SiC MOS Capacitors
Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 473-476
Oxide Traps Probed by Transient Capacitance Measurements on Lateral SiO2/4H-SiC MOSFETs
Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 285-288
Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology
Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 339-344
Study of Ti/Al/Ni Ohmic Contacts to p-Type Implanted 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 377-380
Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 913-918
Materials Science Forum [Trans Tech Publications Ltd], Volume: 897 Pages: 123-126
Properties of SiO2/4H-SiC Interfaces with an Oxide Deposited by a High-Temperature Process
Materials Science Forum [Trans Tech Publications Ltd], Volume: 897 Pages: 331-334
Silicon Carbide & Related Materials (ECSCRM), European Conference on [IEEE], Pages: 1-1
Properties of SiO 2/4H-SiC interfaces with an oxide deposited by a high-temperature process
Silicon Carbide & Related Materials (ECSCRM), European Conference on [IEEE], Pages: 1-1
Ni2Si/4H-SiC Schottky Photodiodes for Ultraviolet Light Detection
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1015-1018
Large Area Visible Blind 4H-SiC p+/N UV Photodiode Obtained by Aluminium Implantation
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1019-1022
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1121-1124
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 705-708
Interfacial Disorder of Graphene Grown at High Temperatures on 4H-SiC (000-1)
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1129-1132
Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1170-1173
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 701-704
X-Ray Irradiation on 4H-SiC MOS Capacitors Processed under Different Annealing Conditions
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 659-662
Hot electron transistors based on graphene/AlGaN/GaN vertical heterostructures
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1137-1140
Processing and characterization of MOS capacitors fabricated on 2-off axis 4H-SiC epilayers
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 663-666
Trapping States in SiO2/GaN MOS Capacitors Fabricated on Recessed AlGaN/GaN Heterostructures
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1178-1181
Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 685-688
Materials Science Forum [Trans Tech Publications Ltd], Volume: 806 Pages: 143-147
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 424-427
Electrical properties of graphene contacts to AlGaN/GaN heterostructures
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 986-989
Industrial approach for next generation of power devices based on 4H-SiC.
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 660-666
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 428-431
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 999-1002
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 929-932
Materials Science Forum [Trans Tech Publications Ltd], Volume: 806 Pages: 103-107
Ge Assisted 3C-SiC Nucleation and Growth by Vapour Phase Epitaxy on On-Axis 4H-SiC Substrate
Materials Science Forum [Trans Tech Publications Ltd], Volume: 806 Pages: 27-31
Current transport in graphene/AlGaN/GaN heterostructures
2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 19-22
Nanoscale reliability aspects of insulator onto wide band gap compounds
2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 62-65
Micro-Raman characterization of graphene grown on SiC (000-1)
2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 15-18
Thermal and plasma-enhanced atomic layer deposition of hafnium oxide on semiconductor substrates
2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 112-115
Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts
Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 1142-1145
Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 665-668
Characterization of SiO2/SiC interfaces annealed in N2O or POCl3
Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 623-626
Nanoscale Characterization of SiC Interfaces and Devices
Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 407-413
Electrical characteristics of Schottky contacts on Ge-doped 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 706-709
A Nanoscale Look in the Channel of 4H-SiC Lateral MOSFETs
Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 699-702
Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 113-116
Potentialities of nickel oxide as dielectric for GaN and SiC devices
Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 777-780
Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 719-722
Materials Science Forum [Trans Tech Publications Ltd], Volume: 711 Pages: 203-207
Materials Science Forum [Trans Tech Publications Ltd], Volume: 717 Pages: 825-828
Evolution of structural and electrical properties of Au/Ni contacts onto p-GaN after annealing
Materials Science Forum [Trans Tech Publications Ltd], Volume: 717 Pages: 1295-1298
4H-SiC Schottky photodiodes for ultraviolet light detection
2011 IEEE Nuclear Science Symposium Conference Record [IEEE], Pages: 1642-1646
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 808-811
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 413-416
Electrical activity of structural defects in 3C-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 273-276
Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 1211-1214
Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 156 Pages: 493-498
Reliability of Thin Thermally Grown SiO2 on 3C-SiC Studied by Scanning Probe Microscopy
Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 833-836
On the viability of Au/3C-SiC Schottky barrier diodes
Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 677-680
Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 713-716
Demonstration of defect-induced limitations on the properties of Au/3C-SiC Schottky barrier diodes
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 156 Pages: 331-336
Electrical Properties of Ni/GaN Schottky Contacts on High-Temperature Annealed GaN Surfaces
Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 959-962
Nano-Electro-Structural Evolution of Ni-Si Ohmic Contacts to 3C-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 569-572
Materials Science Forum [Trans Tech Publications Ltd], Volume: 600 Pages: 603-606
Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 457-460
Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 417-422
Schottky Barrier Lowering in 4H-SiC Schottky UV Detector
Materials Science Forum [Trans Tech Publications Ltd], Volume: 600 Pages: 1215-1218
Influence of thermal annealing on ohmic contacts and device isolation in AlGaN/GaN heterostructures
Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 967-970
Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier
Materials Science Forum [Trans Tech Publications Ltd], Volume: 600 Pages: 1341-1344
Clustering of gold on 6H-SiC and local nanoscale electrical properties
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 131 Pages: 517-522
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 131 Pages: 491-496
Effects of thermal annealing in ion-implanted Gallium Nitride
2007 15th International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 161-163
2007 15th International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 71-73
Materials science forum [Trans Tech Publications Ltd], Volume: 556 Pages: 571-574
Current transport in Ti/Al/Ni/Au ohmic contacts to GaN and AlGaN
Materials science forum [Trans Tech Publications Ltd], Volume: 556 Pages: 1027-1030
Materials science forum [Trans Tech Publications Ltd], Volume: 556 Pages: 545-548
4H-SiC Schottky array photodiodes for UV imaging application based on the pinch-off surface effect
Materials science forum [Trans Tech Publications Ltd], Volume: 556 Pages: 945-948
Optimisation of epitaxial layer growth by Schottky diodes electrical characterization
Materials science forum [Trans Tech Publications Ltd], Volume: 527 Pages: 199-202
Epitaxial layers grown with HCl addition: a comparison with the standard process
Materials science forum [Trans Tech Publications Ltd], Volume: 527 Pages: 163-166
Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes
Materials science forum [Trans Tech Publications Ltd], Volume: 527 Pages: 1167-1170
New achievements on CVD based methods for SiC epitaxial growth
Materials Science Forum [Trans Tech Publications Ltd], Volume: 483 Pages: 67-72
Defect evolution in ion irradiated 6H-SiC epitaxial layers
Materials Science Forum [Trans Tech Publications Ltd], Volume: 483 Pages: 485-488
Materials Science Forum [Trans Tech Publications Ltd], Volume: 483 Pages: 429-432
Materials Science Forum [Trans Tech Publications Ltd], Volume: 483 Pages: 933-936
Ion-beam induced modifications of titanium Schottky barrier on 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 483 Pages: 729-732
Silicon carbide: Defects and devices
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 108 Pages: 663-670
Measuring Techniques for the Semiconductor’s Parameters
Springer Handbook of Semiconductor Devices [Springer, Cham], Pages: 117-168
Introduction to Gallium Nitride Properties and Applications
Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices [John Wiley & Sons], Pages: 1-40
Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices
[John Wiley & Sons], Pages: 1-446
Conductive AFM of 2D Materials and Heterostructures for Nanoelectronics
Electrical Atomic Force Microscopy for Nanoelectronics [Springer, Cham], Pages: 303-350
Schottky Contacts to Silicon Carbide: Physics, Technology and Applications
Advancing Silicon Carbide Electronics Technology I: Metal Contacts to Silicon Carbide: Physics, Technology, Applications [Materials Research Forum LLC], Volume: 37 Pages: 127-190
Hot Electron Transistors with Graphene Base for THz Electronics
Low Power Semiconductor Devices and Processes for Emerging Applications in Communications, Computing, and Sensing [CRC Press], Pages: 95-115
Nanoscale electrical and structural properties of epitaxial graphene interface with sic (0001)
Epitaxial Graphene on Silicon Carbide [Jenny Stanford Publishing], Pages: 111-141
Proceedings of the European Conference on Silicon Carbide and Related Materials 2018 (ECSCRM2018) [],
GraphITA [Springer, Cham], Pages: 125-136
Silicon Carbide and Related Materials 2015
[Trans Tech Publications Ltd],
Electrical and reliability investigation of AlGaN/GaN HEMTs grown on 8° off-axis 4H-SiC
35th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2011 [], Pages: 153-154
Self-Assembled Metal Nanostructures in Semiconductor Structures
Toward Functional Nanomaterials [Springer, New York, NY], Pages: 127-171
SiC Materials and Devices: Volume 1 [World Scientific], Pages: 77-116