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Design, fabrication and characterization of silicon carbide devices for power electronics.
Study of the effect of post-implantation thermal annealing on the electrical activation of SiC layers, through four point probe Hall-effect measurements.
Virginia Boldrini graduated in Physics from University of Ferrara in 2014, with thesis about the fabrication of a gas sensor based on porous silicon substrate. Then she obtained a PhD in Physics from University of Padova, with thesis on the development and analysis of innovative doping processes for high purity germanium. During her PhD, Virginia was author and coauthor of five papers on academic journals and gave four oral presentations at international conferences. At present, she is a post-doc researcher at CNR-IMM, where she works on silicon carbide for power electronics. She is skilled in the fabrication of doped semiconductor layers, through conventional and non-conventional doping techniques, and in their characterization by several methods, particularly Hall-effect measurements.
Scientific Productions
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1004 Pages: 698-704
3× 1018-1× 1019 cm-3 Al+ ion implanted 4H-SiC: annealing time effect
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1004 Pages: 683-688
Characterization and modeling of thermally-induced doping contaminants in high-purity Germanium
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 52 Issue: 3 Pages: 035104
Diffusion doping of germanium by sputtered antimony sources
Materials Science in Semiconductor Processing [Pergamon], Volume: 75 Pages: 118-123
The European Physical Journal A [Springer Berlin Heidelberg], Volume: 54 Issue: 3 Pages: 34
Optimal process parameters for phosphorus spin-on-doping of germanium
Applied Surface Science [North-Holland], Volume: 392 Pages: 1173-1180
NEW DEVELOPMENTS IN HPGe DETECTORS FOR HIGH RESOLUTION DETECTION
Acta Phys. Polon. [], Volume: 48 Pages: 387