Primary tabs
Scientific Productions
ACS Applied Nano Materials [American Chemical Society],
Plasmon Response in Individual Conical Silicon Nanowires with Different Lengths
Photonics [MDPI], Volume: 11 Issue: 11 Pages: 999
Damage evolution in Plasma Facing Materials by a sequential multiscale approach
Nuclear Fusion [IOP Publishing], Volume: 64 Issue: 10 Pages: 106051
Electrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin Wafers
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 359 Pages: 97-103
arXiv preprint arXiv:2403.11606 [],
Stability and decoherence analysis of the silicon vacancy in
Physical Review A [American Physical Society], Volume: 109 Issue: 2 Pages: 022603
Crystals [MDPI], Volume: 14 Issue: 2 Pages: 125
Interface Properties of MoS2 van der Waals Heterojunctions with GaN
Nanomaterials [MDPI], Volume: 14 Issue: 2 Pages: 133
Advanced Optical Materials [], Pages: 2302397
Multiscale atomistic modelling of CVD: From gas-phase reactions to lattice defects
Materials Science in Semiconductor Processing [Pergamon], Volume: 167 Pages: 107792
Local Coordination Modulates the Reflectivity of Liquefied Si–Ge Alloys
The Journal of Physical Chemistry C [American Chemical Society],
Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloys
Materials Science in Semiconductor Processing [Pergamon], Volume: 165 Pages: 107635
Atomistic insights into ultrafast SiGe nanoprocessing
The Journal of Physical Chemistry C [American Chemical Society],
Applied Surface Science [North-Holland], Volume: 631 Pages: 157563
Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2
Applied Surface Science [North-Holland], Volume: 630 Pages: 157476
Predictive Maintenance of Pins in the ECD Equipment for Cu Deposition in the Semiconductor Industry
Sensors [MDPI], Volume: 23 Issue: 14 Pages: 6249
Ni-Silicide Ohmic Contacts on 4H-SiC Formed by Multi Pulse Excimer Laser Annealing
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 344 Pages: 15-22
Preventing lead leakage in perovskite solar cells with a sustainable titanium dioxide sponge
Nature Sustainability [Nature Publishing Group UK], Pages: 1-10
Lead Detection in a Gig-Lox TiO2 Sponge by X-ray Reflectivity
Nanomaterials [MDPI], Volume: 13 Issue: 8 Pages: 1397
International Journal of Molecular Sciences [MDPI], Volume: 24 Issue: 8 Pages: 6877
Aging simulations of plasma facing materials through a multiscale approach
Science Talks [Elsevier],
Optical Materials Express [Optica Publishing Group], Volume: 13 Issue: 3 Pages: 598-609
Spongy TiO2 layers deposited by gig-lox sputtering processes: Contact angle measurements
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 41 Issue: 1 Pages: 012802
physica status solidi (RRL)–Rapid Research Letters [], Pages: 2300218
Multiscale Simulations for Defect-Controlled Processing of Group IV Materials
Crystals [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 12 Pages: 1701
Decoherence analysis of silicon vacancies in 3C-SiC
arXiv preprint arXiv:2211.00341 [],
Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors
Journal of Applied Physics [AIP Publishing LLC], Volume: 132 Issue: 16 Pages: 165105
In-Situ Degradation Pathway Analyses on Hybrid Perovskites with Mixed Cations and Anions
The Journal of Physical Chemistry C [American Chemical Society], Volume: 126 Issue: 39 Pages: 16825-16833
Solar RRL [], Volume: 6 Issue: 8 Pages: 2200267
ECS Meeting Abstracts [IOP Publishing], Issue: 29 Pages: 1278
ECS Meeting Abstracts [IOP Publishing], Issue: 29 Pages: 1279
High aspect ratio tilted gratings through local electric field modulation in plasma etching
Applied Surface Science [North-Holland], Volume: 588 Pages: 152938
Semiconductor Science and Technology [IOP Publishing],
Black‐Yellow Bandgap Trade‐Off During Thermal Stability Tests in Low‐Temperature Eu‐Doped CsPbI3
Solar RRL [], Volume: 6 Issue: 6 Pages: 2200008
Multiscale modeling of ultrafast melting phenomena
npj Computational Materials [Nature Publishing Group], Volume: 8 Issue: 1 Pages: 1-10
Early Stages of Aluminum-Doped Zinc Oxide Growth on Silicon Nanowires
Nanomaterials [MDPI], Volume: 12 Issue: 5 Pages: 772
Solar RRL [Wiley], Volume: 6 Issue: 8 Pages: 2200267
Electronics [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 2 Pages: 203
Energy Technology [],
Organic Electronics [North-Holland], Volume: 98 Pages: 106279
Surface Plasmons in Silicon Nanowires
Advanced Photonics Research [], Pages: 2100130
Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC
Journal of Physics D: Applied Physics [IOP], Volume: 54 Issue: 44 Pages: 445107
Study of the Molecule Adsorption Process during the Molecular Doping
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 8 Pages: 1899
Materials [MDPI], Volume: 14 Issue: 13 Pages: 3676
Formation of CsPbI3 γ‐Phase at 80 °C by Europium‐Assisted Snowplow Effect
Advanced Energy and Sustainability Research [], Volume: 2 Issue: 7 Pages: 2100091
Design and characterization of effective solar cells
Energy Systems [Springer Berlin Heidelberg], Pages: 1-28
Exploring the Structural Competition between the Black and the Yellow Phase of CsPbI3
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 5 Pages: 1282
Optical behaviour of γ-black CsPbI3 phases formed by quenching from 80° C and 325° C
Journal of Physics: Materials [IOP Publishing],
The Journal of Physical Chemistry C [American Chemical Society], Volume: 125 Issue: 9 Pages: 4938-4945
Simulations of the Ultra-Fast Kinetics in Ni-Si-C Ternary Systems under Laser Irradiation
Materials [Multidisciplinary Digital Publishing Institute], Volume: 14 Issue: 16 Pages: 4769
Journal of Materials Chemistry A [Royal Society of Chemistry], Volume: 9 Issue: 30 Pages: 16456-16469
Inter-diffusion, melting and reaction interplay in Ni/4H-SiC under excimer laser annealing
Applied Surface Science [North-Holland], Volume: 539 Pages: 148218
TiO2 Colloids Laser-Treated in Ethanol for Photocatalytic H2 Production
ACS Applied Nano Materials [American Chemical Society], Volume: 3 Issue: 9 Pages: 9127-9140
Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC
Applied Physics Reviews [AIP Publishing LLC], Volume: 7 Issue: 2 Pages: 021402
Phononic transport and simulations of annealing processes in nanometric complex structures
Physical Review Materials [American Physical Society], Volume: 4 Issue: 5 Pages: 056007
Frontiers in Chemistry [Frontiers Media SA], Volume: 8 Pages: 200
Generation and Termination of Stacking Faults by Inverted Domain Boundaries in 3C-SiC
Crystal Growth & Design [American Chemical Society], Volume: 20 Issue: 5 Pages: 3104-3111
Generation and termination of stacking faults by Inverted Domain Boundary in 3C-SiC
Crystal Growth & Design [American Chemical Society],
Temperature Dependent Optical Band Gap in CsPbBr3, MAPbBr3 and FAPbBr3 Single Crystals
The journal of physical chemistry letters [American Chemical Society], Volume: 11 Issue: 7 Pages: 2490-2496
Ni/4h-sic interaction and silicide formation under excimer laser annealing for ohmic contact
Materialia [Elsevier], Volume: 9 Pages: 100528
Pulsed laser annealing for advanced technology nodes: Modeling and calibration
Applied Surface Science [North-Holland], Volume: 505 Pages: 144470
Pulsed laser annealing for advanced technology nodes: modeling and calibration
Applied Surface Science [North-Holland], Volume: 505 Pages: 144470
Advanced Electronic Materials [], Volume: 6 Issue: 2 Pages: 1901171
physica status solidi (RRL)–Rapid Research Letters [], Volume: 14 Issue: 2 Pages: 1900399
Local Order and Rotational Dynamics in Mixed A-Cation Lead Iodide Perovskites
The journal of physical chemistry letters [American Chemical Society], Volume: 11 Issue: 3 Pages: 1068-1074
Frontiers in Chemistry [Frontiers], Volume: 8 Pages: 200
Energies [Multidisciplinary Digital Publishing Institute], Volume: 13 Issue: 15 Pages: 3953
Wet Environment Effects for Ethanol and Water Adsorption on Anatase TiO2 (101) Surfaces
The Journal of Physical Chemistry C [American Chemical Society], Volume: 124 Issue: 4 Pages: 2406-2419
Japanese Journal of Applied Physics [IOP Publishing], Volume: 58 Issue: 12 Pages: 120911
Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact
Materialia [Elsevier], Pages: 100528
On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted silicon
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 458 Pages: 179-183
On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted silicon
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 458 Pages: 179-183
Chemical Vapor Deposition Growth of Silicon Nanowires with Diameter Smaller Than 5 nm
ACS omega [American Chemical Society], Volume: 4 Issue: 19 Pages: 17967-17971
High performance graphene/AlGaN/GaN Schottky junctions for hot electron transistors
ACS Applied Electronic Materials [American Chemical Society], Volume: 1 Issue: 11 Pages: 2342-2354
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 9 Issue: 9 Pages: 1300
Nanostructured TiO2 Grown by Low-Temperature Reactive Sputtering for Planar Perovskite Solar Cells
ACS Applied Energy Materials [American Chemical Society], Volume: 2 Issue: 9 Pages: 6218-6229
Nitrogen doped spongy TiO2 layers for sensors application
Materials Science in Semiconductor Processing [Pergamon], Volume: 98 Pages: 44-48
Hybrid perovskites for photovoltaics: Story, challenges and opportunities
La Rivista del Nuovo Cimento [Società Italiana di Fisica], Volume: 42 Issue: 7 Pages: 301-366
Physical Review E [American Physical Society], Volume: 99 Issue: 6 Pages: 063307
Study on the Physico-Chemical Properties of the Si Nanowires Surface
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 9 Issue: 6 Pages: 818
Pb clustering and PbI 2 nanofragmentation during methylammonium lead iodide perovskite degradation
Nature communications [Nature Publishing Group], Volume: 10 Issue: 1 Pages: 1-11
Simulation of the Growth Kinetics in Group IV Compound Semiconductors
physica status solidi (a) [], Volume: 216 Issue: 10 Pages: 1800597
Self‐Assembling of Block Copolymers with Alternative Solvents
Macromolecular Chemistry and Physics [], Volume: 220 Issue: 9 Pages: 1800523
Advanced Materials Interfaces [], Volume: 6 Issue: 10 Pages: 1900097
Direct observation of single organic molecules grafted on the surface of a silicon nanowire
Scientific reports [Nature Publishing Group], Volume: 9 Issue: 1 Pages: 1-8
Porous Gig-Lox TiO2 Doped with N2 at Room Temperature for P-Type Response to Ethanol
Chemosensors [Multidisciplinary Digital Publishing Institute], Volume: 7 Issue: 1 Pages: 12
Nitrogen Soaking Promotes Lattice Recovery in Polycrystalline Hybrid Perovskites
Advanced Energy Materials [], Volume: 9 Issue: 12 Pages: 1803450
Theoretical study of the laser annealing process in FinFET structures
Applied Surface Science [North-Holland], Volume: 467 Pages: 666-672
ADVANCED MATERIALS INTERFACES [Wiley-VCH Verlag GmbH & Co. KGaA.], Pages: 1-11
3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate
Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 20 Pages: 3407
Enhancing quantum efficiency of thin-film silicon solar cells by Pareto optimality
Journal of Global Optimization [Springer US], Volume: 72 Issue: 3 Pages: 491-515
Transparent conductive polymer obtained by in-solution doping of PEDOT: PSS
Polymer [Elsevier], Volume: 155 Pages: 199-207
Theoretical study of the laser annealing process in FinFET structures
Applied Surface Science [North-Holland]
Transparent conductive polymers obtained by in-solution doping of PEDOT: PSS
Polymer [Elsevier],
AIP Conference Proceedings [AIP Publishing LLC], Volume: 1990 Issue: 1 Pages: 020008
Nanotechnology [IOP Publishing], Volume: 29 Issue: 39 Pages: 395702
physica status solidi (a) [], Volume: 215 Issue: 14 Pages: 1800114
Stability and Degradation in Hybrid Perovskites: Is the Glass Half-Empty or Half-Full?
The journal of physical chemistry letters [American Chemical Society],
physica status solidi (a) [], Volume: 215 Issue: 10 Pages: 1700653
APL Materials [AIP Publishing LLC], Volume: 6 Issue: 5 Pages: 058504
Innovative spongy TiO2 layers for gas detection at low working temperature
Sensors and Actuators B: Chemical [Elsevier], Volume: 259 Pages: 658-667
Phase field model of the nanoscale evolution during the explosive crystallization phenomenon
Journal of Applied Physics [AIP Publishing LLC], Volume: 123 Issue: 10 Pages: 105105
Simulation of the Growth Kinetics in Group IV Compound Semiconductors
physica status solidi (a) [], Pages: 1800597
Materials Science Forum [], Volume: 924 Pages: 913
On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted silicon
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [Elsevier],
Innovative spongy TiO 2 layers for gas detection at low working temperature
Sensors and Actuators B: Chemical [Elsevier],
Role of H Distribution on Coherent Quantum Transport of Electrons in Hydrogenated Graphene
Condensed Matter [Multidisciplinary Digital Publishing Institute], Volume: 2 Issue: 4 Pages: 37
Ultrafast Generation of Unconventional {001} Loops in Si
Physical Review Letters [American Physical Society], Volume: 119 Issue: 20 Pages: 205503
Journal of Materials Chemistry A [The Royal Society of Chemistry],
ACS Applied Materials & Interfaces [American Chemical Society], Volume: 9 Issue: 27 Pages: 23164-23174
Revealing a Discontinuity in the Degradation Behavior of CH3NH3PbI3 during Thermal Operation
The Journal of Physical Chemistry C [American Chemical Society], Volume: 121 Issue: 25 Pages: 13577-13585
Atom by Atom simulation of nano-materials manipulation: the plasma etching case
IEEE Transactions on Nanotechnology [IEEE]
Atom by Atom Simulations of Nanomaterial Manipulation: The Plasma Etching Case
IEEE Transactions on Nanotechnology [IEEE], Volume: 16 Issue: 5 Pages: 790-797
Engineering Applications of Artificial Intelligence [Pergamon], Volume: 62 Pages: 373-383
Revealing a Discontinuity in the Degradation Behaviour of CH3NH3PbI3 during Thermal Operation
The Journal of Physical Chemistry C [American Chemical Society],
Journal of Applied Physics [AIP Publishing LLC], Volume: 121 Issue: 15 Pages: 155105
First Evidence of CH3NH3PbI3 Optical Constants Improvement in a N2 Environment in the Range 40–80° C
The Journal of Physical Chemistry C [American Chemical Society], Volume: 121 Issue: 14 Pages: 7703-7710
Graphene integration with nitride semiconductors for high power and high frequency electronics
physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600460
First Evidence of CH3NH3PbI3 Optical Constant Improvement in N2 Environment in the Range 40-80° C
The Journal of Physical Chemistry C [American Chemical Society],
The Journal of Physical Chemistry C [American Chemical Society], Volume: 121 Issue: 9 Pages: 5408-5414
Beilstein Journal of Nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 418-424
Applied Physics Letters [AIP Publishing LLC], Volume: 110 Issue: 1 Pages: 011905
Journal of Materials Chemistry A [Royal Society of Chemistry], Volume: 5 Issue: 48 Pages: 25529-25538
Exploring the orthorhombic-tetragonal phase transition in CH3NH3PbI3: The role of atom kinetics
Nanoscale [Royal Society of Chemistry], Volume: 9 Issue: 18 Pages: 5896-5903
Correlations in Condensed Matter under Extreme Conditions [], Volume: 331 Issue: 335 Pages: 399
Scientific reports [Nature Publishing Group], Volume: 6 Issue: 1 Pages: 1-15
Absorption edges of black phosphorus: A comparative analysis
physica status solidi (b) [], Volume: 253 Issue: 12 Pages: 2509-2514
Laser annealing in Si and Ge: Anomalous physical aspects and modeling approaches
Materials Science in Semiconductor Processing [Pergamon],
Graphene integration with nitride semiconductors for high power and high frequency electronics
physica status solidi (a) [],
Substrate and atmosphere influence on oxygen p-doped graphene
Carbon [Pergamon], Volume: 107 Pages: 696-704
From PbI2 to MAPbI3 through Layered Intermediates
The Journal of Physical Chemistry C [American Chemical Society], Volume: 120 Issue: 35 Pages: 19768-19777
Effect of air on oxygen p‐doped graphene on SiO2
physica status solidi (a) [], Volume: 213 Issue: 9 Pages: 2341-2344
Engineering Applications of Artificial Intelligence [Pergamon],
Applied Physics Letters [AIP Publishing LLC], Volume: 109 Issue: 1 Pages: 012102
Sensing and bio-sensing research [Elsevier], Volume: 9 Pages: 7-12
Energies [Multidisciplinary Digital Publishing Institute], Volume: 9 Issue: 6 Pages: 433
Sensing and bio-sensing research [Elsevier], Volume: 8 Pages: 59-64
Scientific reports [Nature Publishing Group], Volume: 6 Issue: 1 Pages: 1-7
Simulating structural transitions with kinetic Monte Carlo: The case of epitaxial graphene on SiC
Physical Review E [American Physical Society], Volume: 93 Issue: 3 Pages: 033304
Carbon nanotube-based sensing devices for human Arginase-1 detection
Sensing and bio-sensing research [Elsevier], Volume: 7 Pages: 168-173
Analysis of the role of elution buffers on the separation capabilities of dielectrophoretic devices
Sensing and bio-sensing research [Elsevier], Volume: 7 Pages: 162-167
Kinetic Monte Carlo simulations of vacancy evolution in graphene
Materials Science in Semiconductor Processing [Pergamon], Volume: 42 Pages: 179-182
Defect evolution and dopant activation in laser annealed Si and Ge
Materials Science in Semiconductor Processing [Pergamon], Volume: 42 Pages: 188-195
Materials Science in Semiconductor Processing [Pergamon], Volume: 42 Pages: 200-203
Oxygen behavior in germanium during melting laser thermal annealing
Materials Science in Semiconductor Processing [Pergamon], Volume: 42 Pages: 196-199
Impurity and defect interactions during laser thermal annealing in Ge
Journal of Applied Physics [AIP Publishing LLC], Volume: 119 Issue: 4 Pages: 045702
Impurity and defect interactions during laser thermal annealing in Ge
Journal of Applied Physics [], Volume: 119 Issue: 4
Energies [MDPI, Open Access Journal], Volume: 9 Issue: 6
Stability of solution-processed MAPbI 3 and FAPbI 3 layers
Physical Chemistry Chemical Physics [Royal Society of Chemistry], Volume: 18 Issue: 19 Pages: 13413-13422
Energies [MDPI, Open Access Journal], Volume: 9 Issue: 6 Pages: 1-13
Electron energy-loss spectra of graphene oxide for the determination of oxygen functionalities
Carbon [Pergamon], Volume: 93 Pages: 1034-1041
Similar structural dynamics for the degradation of CH3NH3PbI3 in air and in vacuum
ChemPhysChem [WILEY‐VCH Verlag], Volume: 16 Issue: 14 Pages: 3064-3071
Graphene p-type doping and stability by thermal treatments in molecular oxygen controlled atmosphere
The Journal of Physical Chemistry C [American Chemical Society], Volume: 119 Issue: 39 Pages: 22718-22723
Correction to “Texture of MAPbI3 Layers Assisted by Chloride on Flat TiO2 Substrates”
The Journal of Physical Chemistry C [American Chemical Society], Volume: 119 Issue: 37 Pages: 21745-21745
Texture of MAPbI3 layers assisted by chloride on flat TiO2 substrates
The Journal of Physical Chemistry C [American Chemical Society], Volume: 119 Issue: 34 Pages: 19808-19816
Fluorocarbon Chemistry: A 0-Dimensional Model for Oxide and Nitride Dry Etching
IEEE Transactions on Semiconductor Manufacturing [IEEE Journals & Magazines], Volume: 28 Issue: 3 Pages: 337-344
physica status solidi (a) [], Volume: 212 Issue: 8 Pages: 1685-1694
Electrophoresis [], Volume: 36 Issue: 13 Pages: 1396-1404
Interface disorder probed at the atomic scale for graphene grown on the C face of SiC
Physical Review B [American Physical Society], Volume: 91 Issue: 15 Pages: 155411
Atomistic origins of CH {sub 3} NH {sub 3} PbI {sub 3} degradation to PbI {sub 2} in vacuum
Applied Physics Letters [], Volume: 106 Issue: 13
Atomistic origins of CH3NH3PbI3 degradation to PbI2 in vacuum
Applied Physics Letters [AIP Publishing LLC], Volume: 106 Issue: 13 Pages: 131904
Defects and gas sensing properties of carbon nanotube-based devices
Journal of Sensors and Sensor Systems [Copernicus GmbH], Volume: 4 Issue: 1 Pages: 25-30
Molecular doping applied to Si nanowires array based solar cells
Solar Energy Materials and Solar Cells [North-Holland], Volume: 132 Pages: 118-122
RSC advances [Royal Society of Chemistry], Volume: 5 Issue: 90 Pages: 73444-73450
Biomedical engineering online [BioMed Central], Volume: 13 Issue: 1 Pages: 1-10
physica status solidi (c) [WILEY‐VCH Verlag], Volume: 11 Issue: 11‐12 Pages: 1606-1610
Room temperature evolution of gold nanodots deposited on silicon
Gold Bulletin [Springer Berlin Heidelberg], Volume: 47 Issue: 3 Pages: 185-193
Journal of Applied Physics [AIP Publishing LLC], Volume: 116 Issue: 5 Pages: 054907
Journal of Applied Physics [], Volume: 116 Issue: 5
Observation of layer by layer graphitization of 4H-SiC, through atomic-EELS at low energy
Microscopy and Microanalysis [Cambridge University Press], Volume: 20 Issue: S3 Pages: 560-561
EPL (Europhysics Letters) [IOP Publishing], Volume: 107 Issue: 2 Pages: 27006
ACS applied materials & interfaces [American Chemical Society], Volume: 6 Issue: 9 Pages: 6425-6433
Journal of crystal growth [North-Holland], Volume: 393 Pages: 150-155
Extended defects formation in nanosecond laser-annealed ion implanted silicon
Nano Letters [American Chemical Society], Volume: 14 Issue: 4 Pages: 1769-1775
The Journal of Physical Chemistry C [American Chemical Society], Volume: 118 Issue: 13 Pages: 6576-6585
Origin and impact of sublattice symmetry breaking in nitrogen-doped graphene
Physical Review B [American Physical Society], Volume: 89 Issue: 11 Pages: 115408
Journal of Computational Electronics [Springer US], Volume: 13 Issue: 1 Pages: 70-94
N-type doping of Ge by As implantation and excimer laser annealing
Journal of Applied Physics [American Institute of Physics], Volume: 115 Issue: 5 Pages: 053501
Applied surface science [North-Holland], Volume: 291 Pages: 69-73
Applied surface science [North-Holland], Volume: 291 Pages: 53-57
Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing
Applied Physics Express [IOP Publishing], Volume: 7 Issue: 2 Pages: 021301
Atomic scale Monte Carlo simulations of BF3 plasma immersion ion implantation in Si
physica status solidi (c) [WILEY‐VCH Verlag], Volume: 11 Issue: 1 Pages: 109-112
Atomic Scale Imaging and Energy Loss Spectroscopy of Epitaxial Graphene
MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1714
Role of oxygen on the electrical activation of B in Ge by excimer laser annealing
physica status solidi (a) [], Volume: 211 Issue: 1 Pages: 122-125
Simulation of the boron build-up formation during melting laser thermal annealing
physica status solidi (c) [WILEY‐VCH Verlag], Volume: 11 Issue: 1 Pages: 89-92
Role of the early stages of Ni‐Si interaction on the formation of transrotational Ni‐silicides
physica status solidi (c) [WILEY‐VCH Verlag], Volume: 11 Issue: 1 Pages: 164-168
SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3
Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 15 Pages: 153508
Direct growth of quasi-free-standing epitaxial graphene on nonpolar SiC surfaces
Physical Review B [American Physical Society], Volume: 88 Issue: 8 Pages: 085408
Process simulation of hydrogen intercalation in epitaxial graphene on SiC (0001)
physica status solidi (b) [], Volume: 250 Issue: 8 Pages: 1478-1482
Nanofabrication processes for innovative nanohole‐based solar cells
Physica status solidi (a) [], Volume: 210 Issue: 8 Pages: 1564-1570
Journal of Applied Physics [American Institute of Physics], Volume: 113 Issue: 21 Pages: 214313
The Journal of Physical Chemistry C [American Chemical Society], Volume: 117 Issue: 21 Pages: 11176-11185
Radial junctions formed by conformal chemical doping for innovative hole-based solar cells
Materials Science and Engineering: B [Elsevier], Volume: 178 Issue: 9 Pages: 686-690
Delaminated graphene at silicon carbide facets: atomic scale imaging and spectroscopy
ACS nano [American Chemical Society], Volume: 7 Issue: 4 Pages: 3045-3052
B-doping in Ge by excimer laser annealing
Journal of Applied Physics [American Institute of Physics], Volume: 113 Issue: 11 Pages: 113505
Challenges and opportunities for doping control in Ge for micro and optoelectronics applications
ECS Transactions [IOP Publishing], Volume: 50 Issue: 5 Pages: 89
ECS Transactions [The Electrochemical Society], Volume: 50 Issue: 5 Pages: 89-103
Anomalous impurity segregation and local bonding fluctuation in l-si
Physical Review Letters [American Physical Society], Volume: 110 Issue: 11 Pages: 117801
A density functional theory study of epitaxial graphene on the (3× 3)-reconstructed C-face of SiC
Applied Physics Letters [American Institute of Physics], Volume: 102 Issue: 9 Pages: 093101
Micro‐Raman analysis and finite‐element modeling of 3 C‐SiC microstructures
Journal of Raman Spectroscopy [], Volume: 44 Issue: 2 Pages: 299-306
Stress nature investigation on heteroepitaxial 3C–SiC film on (100) Si substrates
Journal of Materials Research [Cambridge University Press], Volume: 28 Issue: 1 Pages: 129
Journal of Materials Research [Cambridge University Press], Volume: 28 Issue: 1 Pages: 104
JOURNAL OF APPLIED PHYSICS [], Volume: 114 Pages: 121301
Interaction between hydrogen flux and carbon monolayer on SiC (0001): graphene formation kinetics
Nanoscale [Royal Society of Chemistry], Volume: 5 Issue: 2 Pages: 671-680
Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC
Physical Review B [American Physical Society], Volume: 86 Issue: 23 Pages: 235422
Simulation of Semiconductor Processes and Devices 2001: SISPAD 01 [Springer Science & Business Media], Pages: 120
Modeling boron profiles in silicon after pulsed excimer laser annealing
AIP Conference Proceedings [American Institute of Physics], Volume: 1496 Issue: 1 Pages: 241-244
Kinetic Monte Carlo simulation of dopant-defect systems under submicrosecond laser thermal processes
AIP Conference Proceedings [American Institute of Physics], Volume: 1496 Issue: 1 Pages: 221-224
Thin Solid Films [Elsevier], Volume: 522 Pages: 26-29
Anomalous transport of Sb in laser irradiated Ge
Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 17 Pages: 172110
Physical Review E [American Physical Society], Volume: 86 Issue: 3 Pages: 036705
Enthalpy based modeling of pulsed excimer laser annealing for process simulation
Applied surface science [North-Holland], Volume: 258 Issue: 23 Pages: 9347-9351
Applied surface science [North-Holland], Volume: 258 Issue: 23 Pages: 9128-9137
ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 1 Issue: 3 Pages: Q52
Monte Carlo study of the hetero-polytypical growth of cubic on hexagonal silicon carbide polytypes
Surface science [North-Holland], Volume: 606 Issue: 15-16 Pages: 1263-1267
Journal of Raman Spectroscopy [John Wiley & Sons, Ltd], Volume: 43 Issue: 8 Pages: 1018-1023
Electronic transport signatures of common defects in irradiated graphene-based systems
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 282 Pages: 108-111
arXiv preprint arXiv:1206.6600 [],
Physical Review B [American Physical Society], Volume: 85 Issue: 23 Pages: 235310
Challenges and opportunities for doping control in Ge for micro and optoelectronics applications
Meeting Abstracts [The Electrochemical Society], Issue: 32 Pages: 2631-2631
Applied Physics Letters [American Institute of Physics], Volume: 100 Issue: 13 Pages: 134104
Wafer Cut Effect on Hetero-Epitaxial 3C-SiC Film for MEMS Application
Electrochemical and Solid State Letters [IOP Publishing], Volume: 15 Issue: 6 Pages: H182
Computational materials science [Elsevier], Volume: 54 Pages: 227-235
Quantum transport modeling of defected graphene nanoribbons
Physica E: Low-dimensional Systems and Nanostructures [North-Holland], Volume: 44 Issue: 6 Pages: 981-984
Silicon Nanowires Obtained by Low Temperature Plasma-Based Chemical Vapor Deposition.
Mater. Res. Soc. Symp. Proc [], Volume: 1408 Pages: 139
Physical Review B [American Physical Society], Volume: 84 Issue: 23 Pages: 235426
Nanoscale research letters [SpringerOpen], Volume: 6 Issue: 1 Pages: 1-5
Ab Initio Study of Ge Intercalation in Epitaxial Graphene on SiC (0001)
Applied Physics Express [IOP Publishing], Volume: 4 Issue: 12 Pages: 125101
Surface science [North-Holland], Volume: 605 Issue: 21-22 Pages: L67-L69
Schottky barrier inhomogeneities in nickel silicide transrotational contacts
Applied Physics Express [IOP Publishing], Volume: 4 Issue: 11 Pages: 115701
arXiv preprint arXiv:1110.4727 [],
Solid phase phosphorous activation in implanted silicon by excimer laser irradiation
Journal of Applied Physics [American Institute of Physics], Volume: 109 Issue: 11 Pages: 113513
Ion beam induced defects in graphene: Raman spectroscopy and DFT calculations
Journal of Molecular Structure [Elsevier], Volume: 993 Issue: 1-3 Pages: 506-509
Coherent electron transport in quasi one-dimensional carbon-based systems
The European Physical Journal B [Springer-Verlag], Volume: 81 Issue: 1 Pages: 15
3C-SiC film growth on Si substrates
ECS Transactions [IOP Publishing], Volume: 35 Issue: 6 Pages: 99
Advanced residual stress analysis on the heteroepitaxial growth of 3C-SiC/Si for MEMS application
ECS Transactions [IOP Publishing], Volume: 35 Issue: 6 Pages: 123
Laser annealing of SiGe and Ge based devices
Microelectronic engineering [Elsevier], Volume: 88 Issue: 4 Pages: 488-491
Dopant activation and damage evolution in implanted silicon after excimer laser annealing
physica status solidi c [WILEY‐VCH Verlag], Volume: 8 Issue: 3 Pages: 940-943
Applied physics express [IOP Publishing], Volume: 4 Issue: 2 Pages: 025802
Applied Physics Letters [American Institute of Physics], Volume: 98 Issue: 5 Pages: 051915
Single-layer metallicity and interface magnetism of epitaxial graphene on SiC (000 1)
Applied Physics Letters [American Institute of Physics], Volume: 98 Issue: 2 Pages: 023113
Growth of wide bandgap materials
ECS Trans [], Volume: 35 Pages: 99
Applied Physics Express [], Volume: 4 Issue: 2
Journal of Applied Physics [American Institute of Physics], Volume: 108 Issue: 12 Pages: 123511
AIP Conference Proceedings [American Institute of Physics], Volume: 1292 Issue: 1 Pages: 99-102
Atomistic quantum transport modeling of metal-graphene nanoribbon heterojunctions
Physical Review B [American Physical Society], Volume: 82 Issue: 16 Pages: 161413
Optical investigation of bulk electron mobility in 3C–SiC films on Si substrates
Applied Physics Letters [American Institute of Physics], Volume: 97 Issue: 14 Pages: 142103
Applied Physics Letters [American Institute of Physics], Volume: 97 Issue: 2 Pages: 022107
Stacking faults evolution during epitaxial growths: Role of surface the kinetics
Surface Science [North-Holland], Volume: 604 Issue: 11-12 Pages: 939-942
Sensor Letters [American Scientific Publishers], Volume: 8 Issue: 3 Pages: 457-464
Applied Physics Letters [American Institute of Physics], Volume: 96 Issue: 14 Pages: 142113
Lack of universal conductance features in disordered graphene nanoribbons
physica status solidi c [WILEY‐VCH Verlag], Volume: 7 Issue: 3‐4 Pages: 1246-1250
Journal of The Electrochemical Society [IOP Publishing], Volume: 157 Issue: 4 Pages: H438
Effects due to backscattering and pseudogap features in graphene nanoribbons with single vacancies
Physical Review B [American Physical Society], Volume: 81 Issue: 8 Pages: 085427
Journal of Physics: Condensed Matter [IOP Publishing], Volume: 22 Issue: 9 Pages: 095504
MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1246
Extended study of the step-bunching mechanism during the homoepitaxial growth of SiC
Thin Solid Films [Elsevier], Volume: 518 Issue: 6 Pages: S159-S161
Mater. Sci. Forum [], Volume: 64 Pages: 283
Multiscale simulation for epitaxial silicon carbide growth by chlorides route
Thin solid films [Elsevier], Volume: 518 Issue: 6 Pages: S6-S11
Ab initio prediction of boron compounds arising from borozene: structural and electronic properties
Nanoscale research letters [SpringerOpen], Volume: 5 Issue: 1 Pages: 158-163
Single Shockley faults evolution under UV optical pumping
MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1246
High-quality 6inch (111) 3C-SiC films grown on off-axis (111) Si substrates
Thin Solid Films [Elsevier], Volume: 518 Issue: 6 Pages: S165-S169
Evolution of Stacking Faults Defects During Epitaxial Growths: Role of Surface Kinetics
MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1246
J. Appl. Phys [], Volume: 13511 Issue: 10.1063/1.3457840 Pages: 108
Defect kinetics and dopant activation in submicrosecond laser thermal processes
Applied Physics Letters [American Institute of Physics], Volume: 95 Issue: 23 Pages: 231901
Conductance distribution in doped and defected graphene nanoribbons
Physical Review B [American Physical Society], Volume: 80 Issue: 19 Pages: 195413
Ab initio prediction of boron compounds arising from borozene: structural and electronic properties
Nanoscale research letters [Springer New York], Volume: 5 Issue: 1 Pages: 158
A three-dimensional phase-field simulation of pulsed laser induced epitaxial growth of silicon
Journal of Optoelectronics and Advanced Materials [JOAM], Volume: 12 Issue: March 2010 Pages: 701-706
Preferential oxidation of stacking faults in epitaxial off-axis (111) 3 C-SiC films
Applied Physics Letters [American Institute of Physics], Volume: 95 Issue: 11 Pages: 111905
Particle-chain formation in a dc dielectrophoretic trap; a reaction-diffusion approach
Applied Physics Letters [American Institute of Physics], Volume: 95 Issue: 7 Pages: 073702
Electronic structure of epitaxial graphene nanoribbons on SiC (0001)
Applied Physics Letters [American Institute of Physics], Volume: 95 Issue: 6 Pages: 063111
Insulator-metal transition in biased finite polyyne systems
The European Physical Journal B [Springer-Verlag], Volume: 70 Issue: 3 Pages: 311-316
Monte Carlo study of the step flow to island nucleation transition for close packed structures
Surface Science [North-Holland], Volume: 603 Issue: 14 Pages: 2226-2229
Quantitative study of the Si/SiO 2 phase separation in substoichiometric silicon oxide films
Materials Science and Engineering: B [Elsevier], Volume: 159 Pages: 80-82
Effect of the miscut direction in (111) 3 C-Si C film growth on off-axis (111) Si
Applied physics letters [American Institute of Physics], Volume: 94 Issue: 10 Pages: 101907
Electronic structure of epitaxial graphene nanoribbons on SiC (0001)
Applied physics letters [American Institute of Physics], Volume: 95 Issue: 6
Defect and dopant kinetics in laser anneals of Si
Materials Science and Engineering: B [Elsevier], Volume: 154 Pages: 35-38
A mean field approach to many-particles effects in dielectrophoresis
Applied Physics Letters [American Institute of Physics], Volume: 93 Issue: 19 Pages: 193902
Violation of the single-parameter scaling hypothesis in disordered graphene nanoribbons
Physical Review B [American Physical Society], Volume: 78 Issue: 15 Pages: 153405
Nonequilibrium aspects of armchair graphene nanoribbon conduction
Materials science in semiconductor processing [Pergamon], Volume: 11 Issue: 5-6 Pages: 190-194
Modeling vacancies and hydrogen impurities in graphene: A molecular point of view
Physics Letters A [North-Holland], Volume: 372 Issue: 40 Pages: 6168-6174
Journal of The Electrochemical Society [IOP Publishing], Volume: 155 Issue: 10 Pages: H764
Boron electrical activation in crystalline Si after millisecond nonmelting laser irradiation
Journal of The Electrochemical Society [IOP Publishing], Volume: 155 Issue: 8 Pages: H603
Electronic transport in carbon nanotube based nano-devices
Physica E: Low-dimensional Systems and Nanostructures [North-Holland], Volume: 40 Issue: 7 Pages: 2333-2338
A polaron model of the electronic transport in a nanotube quantum dot
Physica E: Low-dimensional Systems and Nanostructures [North-Holland], Volume: 40 Issue: 7 Pages: 2289-2293
Bias-driven local density of states alterations and transport in ballistic molecular devices
The Journal of chemical physics [American Institute of Physics], Volume: 128 Issue: 16 Pages: 164706
Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study
Journal of crystal growth [North-Holland], Volume: 310 Issue: 5 Pages: 971-975
Materials Science Forum [], Volume: 768 Issue: 600 Pages: 135
Journal of Computational Physics [Academic Press], Volume: 227 Issue: 2 Pages: 1075-1093
Nonequilibrium electron charging in carbon-nanotube-based molecular bridges
Applied Physics Letters [American Institute of Physics], Volume: 91 Issue: 16 Pages: 163111
Phonon driven nonlinear electrical behavior in molecular devices
Physical review letters [American Physical Society], Volume: 99 Issue: 13 Pages: 136404
Effects of interface bonding on the conductance of metal–carbon nanotube–metal systems
Materials Science and Engineering: C [Elsevier], Volume: 27 Issue: 5-8 Pages: 1102-1107
Vacancy generation in liquid phase epitaxy of Si
Physical Review B [American Physical Society], Volume: 75 Issue: 23 Pages: 235201
Applied physics letters [American Institute of Physics], Volume: 90 Issue: 18 Pages: 183101
Integration of melting excimer laser annealing in power MOS technology
IEEE transactions on electron devices [IEEE], Volume: 54 Issue: 4 Pages: 852-860
Effect of Mo interlayer on thermal stability of polycrystalline NiSi thin films
Journal of applied physics [American Institute of Physics], Volume: 101 Issue: 6 Pages: 063544
Nucleation and growth of NiSi from Ni 2 Si transrotational domains
Applied physics letters [American Institute of Physics], Volume: 90 Issue: 5 Pages: 053507
Nanoisland shape relaxation mechanism
Surface science [North-Holland], Volume: 601 Issue: 2 Pages: 308-314
ELECTRONIC TRANSPORT CALCULATION OF FINITE
Applied and Industrial Mathematics in Italy II: Selected Contributions from the 8th SIMAI Conference: Baia Samuele (Regusa), Italy, 22-26 May 2006 [World Scientific], Volume: 75 Pages: 422
Electron transport properties of calix [4] arene based systems in a metal–molecule–metal junction
New Journal of Chemistry [Royal Society of Chemistry], Volume: 31 Issue: 5 Pages: 756-761
PHYSICAL REVIEW B Phys Rev B [American Physical Society], Volume: 75 Pages: 235201
Role of the internal strain on the incomplete Si
Applied physics letters [American Institute of Physics], Volume: 90 Issue: 18
Bragg reflector based gate stack architecture for process integration of excimer laser annealing
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 25 Pages: 253502
Ultra-shallow junction by laser annealing: Integration issues and modelling
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 253 Issue: 1-2 Pages: 1-8
Structural characterization of Ni2Si pseudoepitaxial transrotational structures on [001] Si
Acta Crystallographica Section B: Structural Science [International Union of Crystallography], Volume: 62 Issue: 5 Pages: 729-736
Role of contact bonding on electronic transport in metal–carbon nanotube–metal systems
Nanotechnology [IOP Publishing], Volume: 17 Issue: 20 Pages: 5063
Excimer Laser annealing for shallow junction formation in Si power MOS devices
Thin solid films [Elsevier], Volume: 504 Issue: 1-2 Pages: 2-6
Quantitative Relation between Engineering and Microscopic Parameters in Fluorocarbon Plasma
PROCEEDINGS OF INTERNATIONAL SYMPOSIUM ON DRY PROCESS [Mentor Communications], Volume: 6 Pages: 81
Perspectives and advantages of the use of excimer laser annealing for MOS technology
Il nuovo cimento C [Societa italiana di fisica], Volume: 29 Issue: 3 Pages: 369-379
Boron distribution in silicon after excimer laser annealing with multiple pulses
Materials Science and Engineering: B [Elsevier], Volume: 124 Pages: 228-231
Excimer laser annealing of B and BF 2 implanted Si
Materials Science and Engineering: B [Elsevier], Volume: 124 Pages: 232-234
The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon
Applied Physics Letters [American Institute of Physics], Volume: 87 Issue: 19 Pages: 192109
Boron distribution in silicon after multiple pulse excimer laser annealing
Applied Physics Letters [American Institute of Physics], Volume: 87 Issue: 8 Pages: 081901
Notching effect on metal etch: a very simple predictive model
IEEE transactions on semiconductor manufacturing [IEEE], Volume: 18 Issue: 3 Pages: 355-358
Role of light scattering in excimer laser annealing of Si
Applied Physics Letters [American Institute of Physics], Volume: 86 Issue: 16 Pages: 161905
Enhanced boron diffusion in excimer laser preannealed Si
Applied Physics Letters [American Institute of Physics], Volume: 86 Issue: 15 Pages: 151902
Journal of The Electrochemical Society [IOP Publishing], Volume: 152 Issue: 4 Pages: G277
Depth distribution of B implanted in Si after excimer laser irradiation
Applied Physics Letters [American Institute of Physics], Volume: 86 Issue: 5 Pages: 051909
Carrier distribution in quantum nanostructures by scanning capacitance microscopy
Journal of applied physics [American Institute of Physics], Volume: 97 Issue: 1 Pages: 014302
Journal of the Electrochemical Society [New York, NY: Electrochemical Society, 1948-], Volume: 152 Issue: 4 Pages: G277
Transversal plasmon resonance observed in tapered silicon nanowires
2024 International Conference on Optical MEMS and Nanophotonics (OMN) [IEEE], Pages: 1-2
Fully solvent-free preparation of MAPbI3 films for photovoltaic application
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV19) [],
Tilted Etching of Microstructure Arrays via Local Electric Field Modulation
Electron, Ion and Photon Beam Technology and Nanofabrication (EIPBN) [],
Ni/Heavily-Doped 4H-SiC Schottky Contacts
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 411-416
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 417-421
Plasmon resonances in silicon quantum wires
European Materials Research Society (E-MRS) 2022-Fall Meeting [],
Computational Study of the Silicon Vacancy in 3C-SiC and Perspectives for Quantum Technologies
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 309-314
The early stages of the Molecule Deposition Process During the Molecular Doping
European Materials Research Society (E-MRS) 2022-Fall Meeting [],
Multiscale Simulations of Plasma Etching in Silicon Carbide Structures
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 214-218
Comparing different solutions for testing resistive defects in low-power SRAMs
2021 IEEE 22nd Latin American Test Symposium (LATS) [IEEE], Pages: 1-6
2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) [IEEE], Pages: 1-6
The bonding mechanisms in the molecular doping process: an experimental and numerical approach
European Materials Research Society 2021 Fall Meeting: Symposium R: Nanomaterials-electronics &-photonics [],
Surface plasmon resonances in silicon nanowires with varying geometry
European Materials Research Society 2021 Fall Meeting: Symposium R: Nanomaterials-electronics &-photonics [],
Study of the surface plasmon resonances in silicon nanowires with diameters less than 100 nm
MRS-Materials Research Society Spring Meeting & Exhibit 2021 [],
2019 Electron Devices Technology and Manufacturing Conference (EDTM) [IEEE], Pages: 130-132
High Resolution Investigation of Stacking Fault Density by HRXRD and STEM
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 346-349
Tailoring Active Defect Centers During the Growth of Group IV Crystals
Multidisciplinary Digital Publishing Institute Proceedings [], Volume: 12 Issue: 1 Pages: 32
22nd International Conference on Ion Implantation Technology [], Pages: 1
2018 22nd International Conference on Ion Implantation Technology (IIT) [IEEE], Pages: 132-135
2018 22nd International Conference on Ion Implantation Technology (IIT) [IEEE], Pages: 353-356
Structural and Optical Behaviour of MAPbI3Layers in Nitrogen and Humid Air
2018 IEEE 4th International Forum on Research and Technology for Society and Industry (RTSI) [IEEE], Pages: 1-5
Conductive Free Standing Polymer Paste Synthesized by Acid Induced Phase Separation
2018 IEEE 4th International Forum on Research and Technology for Society and Industry (RTSI) [IEEE], Pages: 1-5
Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 913-918
MRS Fall Meeting
Materials Science Forum [Trans Tech Publications Ltd], Volume: 897 Pages: 123-126
LIAB: a FEniCS based computational tool for laser annaling simulation
2017 FEniCS conference [], Issue: 32
Atom by atom simulations of nano-materials processing
2016 IEEE Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 1-2
Silicon Carbide & Related Materials (ECSCRM), European Conference on [IEEE], Pages: 1-1
Minisymposium: Mathematical Modeling of Charge Transport in Graphene and Low Dimensional Structure
European Consortium for Mathematics in Industry [Springer, Cham], Pages: 281-282
Interfacial Disorder of Graphene Grown at High Temperatures on 4H-SiC (000-1)
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1129-1132
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1125-1128
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1121-1124
A multi-objective clonal selection algorithm for analog circuit and solar cell design
2015 International Workshop on Artificial Immune Systems (AIS) [IEEE], Pages: 1-7
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 929-932
Materials Science Forum [Trans Tech Publications Ltd], Volume: 806 Pages: 103-107
Micro-Raman characterization of graphene grown on SiC (000-1)
2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 15-18
2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 58-61
Extended defects in ion-implanted si during nanosecond laser annealing
2014 International Workshop on Junction Technology (IWJT) [IEEE], Pages: 1-6
Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications
Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 95-98
Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts
Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 1142-1145
Monte Carlo Study of the Early Growth Stages of 3C-SiC on Misoriented and 6H-Sic Substrates
Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 238-242
Melt depth and time variations during pulsed laser thermal annealing with one and more pulses
2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) [IEEE], Pages: 214-217
2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) [IEEE], Pages: 33-36
Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 113-116
Post-Growth Process Effect on Hetero-Epitaxial 3C-SiC Wafer Bow and Residual Stress
Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 301-305
Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 229-234
Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 673-676
Fast growth rate epitaxy by chloride precursors
Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 167-172
Materials Science Forum [Trans Tech Publications Ltd], Volume: 717 Pages: 517-520
Materials Science Forum [Trans Tech Publications Ltd], Volume: 717 Pages: 149-152
Materials Science Forum [Trans Tech Publications Ltd], Volume: 711 Pages: 55-60
Micro-Raman analysis of a micromachined 3C-SiC cantilever
Materials Science Forum [Trans Tech Publications Ltd], Volume: 717 Pages: 525-528
Consideration on the thermal expansion of 3C-SiC epitaxial layer on Si substrates
Materials Science Forum [Trans Tech Publications Ltd], Volume: 711 Pages: 31-34
Evolution of extended defects during epitaxial growths: a Monte Carlo study
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 48-54
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 133-136
On the “step bunching” phenomena observed on etched and homoepitaxially grown 4H silicon carbide
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 358-361
Raman stress characterization of hetero-epitaxial 3C-SiC free standing structures
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 141-144
Complete determination of the local stress field in epitaxial thin films using single microstructure
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 213-216
Raman study of bulk mobility in 3C-SiC heteroepitaxy
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 221-224
Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 283-286
Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 539-542
Residual stress measurement and simulation of 3C-SiC single and poly crystal cantilevers
Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 865-868
Damage evolution in implanted silicon by pulsed excimer laser annealing
2009 17th International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 1-4
Damage evolution in implanted silicon by pulsed excimer laser annealing
Advanced Thermal Processing of Semiconductors, 2009. RTP'09. 17th International Conference on [IEEE], Pages: 1-4
2009 17th International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 1-16
2009 17th International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 1-19
Materials Science Forum [Trans Tech Publications Ltd], Volume: 600 Pages: 135-138
Atomistic and Continuum Simulations of the Homo-epitaxial Growth of SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 73-76
Thermal and non-thermal kinetics of defects and dopant in Si
2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 235-239
Defect generation and evolution in laser processing of Si
2007 15th International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 245-250
Excimer Laser Annealing of Ion-Implanted Silicon: Dopant Activation, Diffusion and Defect Formation
2007 15th International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 31-35
Highly active junctions formed in crystalline silicon by infrared laser annealing
2007 15th International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 297-299
Temperature Dependent Reaction of Thin Ni-Silicide Transrotational Layers on [001] Si
2007 15th International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 151-153
[Woodhead Publishing],
Continuum modeling and TCAD simulations of laser-related phenomena in CMOS applications
Laser Annealing Processes in Semiconductor Technology [Woodhead Publishing], Pages: 251-291
Nanoscale electrical and structural properties of epitaxial graphene interface with sic (0001)
Epitaxial Graphene on Silicon Carbide [Jenny Stanford Publishing], Pages: 111-141
Nanoscale Electrical and Structural Properties of Epitaxial Graphene Interface with SiC (0001)
Epitaxial Graphene on Silicon Carbide [Pan Stanford], Pages: 123-154
Proceedings of the European Conference on Silicon Carbide and Related Materials 2018 (ECSCRM2018) [],
Nonequilibrium Steady States and Electron Transport in Molecular Systems
Correlations in Condensed Matter under Extreme Conditions [Springer, Cham], Pages: 127-150
A Comparison Between Quantum Transport and Band Structure Unfolding in Defected Graphene Nanoribbons
Correlations in Condensed Matter under Extreme Conditions [Springer, Cham], Pages: 185-194
Ab Initio Calculations and Kinetic Process Simulations of Nitrogen-Doped Graphene
GraphITA [Springer, Cham], Pages: 61-69
Electron Quantum Transport in Disordered Graphene
Scientific Computing in Electrical Engineering [Springer, Cham], Pages: 3-12
Correlation between structural and sensing properties of carbon nanotube-based devices
Sensors [Springer, Cham], Pages: 207-210
Sensors [Springer, Cham], Pages: 9-12
GraphITA 2011 [Springer, Berlin, Heidelberg], Pages: 51-56
Nano-crystalline Si formed by infrared laser irradiation of CVD deposited a-Si: H
E-MRS 2011 FALL MEETING [], Pages: p0-p0
Proceedings of E-MRS 2010 Symposium [],
Damage formation and evolution in ion-implanted crystalline Si
Materials science with ion beams [Springer, Berlin, Heidelberg], Pages: 147-212
Applied And Industrial Mathematics In Italy II [], Pages: 422-431