Primary tabs
- Probe corrected (S)TEM, EELS, EDS - material and device characterization
- chalcogenide materials for PCRAM
- 2D materials for micro and nano-electronics
- amorphous-crystal transition in nano-structures
A.M. Mio got his Ph.D. in Physics in 2012, working on “Crystallization of Amorphous Chalcogenide Nano-Regions and Test-Structure Fabrication for Non-Volatile Memories”. His research activities mainly concern the investigation of structural, morphological and chemical properties by transmission electron microscopy (S)TEM. He obtained his Master Degree in Physics (Condensed Matter Physics) at the University of Catania in 2008, developing part of his thesis activities on atomic cooling at the European Laboratory for Non-Linear Spectroscopy in Florence.
He was also student at Scuola Superiore di Catania (SSC, the institute for advanced studies of the University of Catania), where he graduated summa cum laude in 2009. From 2015 to 2016 he was President of SSC Alma Mater Alumni Association, managing its activities (scientific seminars, degree awards, social meetings, etc.) and its members as well as the website.
From June 2016 to August 2017 he was postDoctoral Researcher at the RWTH Aachen University, in the Phase Change Materials group led by Prof. Matthias Wuttig.
In 2013, he got the certification to teach Mathematics and Physics at High School (Italian TFA, cdc A049) and from September 2017 to November 2019 he was staff physics teacher at Italian ministry of the education, university and research, MIUR
From 2012 to May 2016 and then from September 2018 to November 2019 he was postDoctoral Research Fellow at the Institute for Microelectronics and Microsystems of the (Italian) National Research Council, CNR-IMM.
From November 2019 he is staff Researcher at CNR-IMM.
Scientific Productions
Plasmon Response in Individual Conical Silicon Nanowires with Different Lengths
Photonics [MDPI], Volume: 11 Issue: 11 Pages: 999
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation
arXiv preprint arXiv:2410.08372 [],
Scientific Books of Abstracts [Trans Tech Publications Ltd], Volume: 8 Pages: 394-395
Hydrogen Etching Process of 4H-SiC (0001) in Limited Regions
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 359 Pages: 137-143
Stable chalcogenide Ge–Sb–Te heterostructures with minimal Ge segregation
Scientific Reports [Nature Publishing Group UK], Volume: 14 Issue: 1 Pages: 15713
arXiv preprint arXiv:2403.11606 [],
Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2
Applied Surface Science [North-Holland], Volume: 630 Pages: 157476
ChemCatChem [], Volume: 14 Issue: 17 Pages: e202200685
Crystallization and Electrical Properties of Ge-Rich GeSbTe Alloys
Nanomaterials [MDPI], Volume: 12 Issue: 4 Pages: 631
Towards Custom Built Double Core Carbon Nanothreads by Stilbene and Pseudo-Stilbene Type Systems
Nanoscale [Royal Society of Chemistry],
CHEMCATCHEM [], Volume: 14 Pages: 1-10
Scientific reports [Nature Publishing Group], Volume: 11 Issue: 1 Pages: 1-15
Interlayer Coordination of Pd–Pd Units in Exfoliated Black Phosphorus
Journal of the American Chemical Society [American Chemical Society], Volume: 143 Issue: 27 Pages: 10088-10098
Materials & Design [Elsevier], Volume: 202 Pages: 109545
arXiv preprint arXiv:2102.02759 [],
Chemical Science [Royal Society of Chemistry],
Sustainable Liquid-Phase Exfoliation of Layered Materials with Nontoxic Polarclean Solvent
ACS Sustainable Chemistry & Engineering [American Chemical Society],
arXiv preprint arXiv:2011.08111 [],
Ag/ZnO/PMMA nanocomposites for an efficient water reuse
ACS Applied Bio Materials [American Chemical Society], Volume: 3 Issue: 7 Pages: 4417-4426
Crystallization of nano amorphized regions in thin epitaxial layer of Ge2Sb2Te5
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 53 Issue: 19 Pages: 194001
Disordering process of GeSb2Te4 induced by ion irradiation
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 53 Issue: 13 Pages: 134001
Ion beam induced transient amorphous nucleation in silicon
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 462 Pages: 130-138
Disordering processes of GeSb2Te4 induced by ion irradiation
Journal of Physics D: Applied Physics [IOP Publishing],
Templated dewetting of single-crystal sub-millimeter-long nanowires and on-chip silicon circuits
Nature communications [Nature Publishing Group], Volume: 10 Issue: 1 Pages: 1-10
Impact of Bonding on the Stacking Defects in Layered Chalcogenides
Advanced Functional Materials [], Volume: 29 Issue: 37 Pages: 1902332
Chemistry of Materials [American Chemical Society], Volume: 31 Issue: 14 Pages: 5075-5080
Role of grain boundaries in Ge–Sb–Te based chalcogenide superlattices
Journal of Physics: Condensed Matter [IOP Publishing], Volume: 31 Issue: 20 Pages: 204002
Mechanical properties of amorphous Ge 2 Sb 2 Te 5 thin layers
Surface and Coatings Technology [Elsevier], Volume: 355 Pages: 227-233
ACS Applied Nano Materials [American Chemical Society], Volume: 1 Issue: 12 Pages: 6834-6842
Atomic disordering processes in crystalline GeTe induced by ion irradiation
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 51 Issue: 49 Pages: 495103
Genesis and Effects of Swapping Bilayers in Hexagonal GeSb2Te4
Chemistry of Materials [American Chemical Society], Volume: 30 Issue: 14 Pages: 4770-4777
Designing epitaxial GeSbTe alloys by tuning the phase, the composition, and the vacancy ordering
Journal of Applied Physics [AIP Publishing LLC], Volume: 123 Issue: 21 Pages: 215304
Carbon [Pergamon], Volume: 132 Pages: 141-151
Unique bond breaking in crystalline phase change materials and the quest for metavalent bonding
Advanced Materials [], Volume: 30 Issue: 18 Pages: 1706735
SCIENTIFIC REPORTS [NATURE PUBLISHING GROUP], Volume: 8
Scientific reports [Nature Publishing Group], Volume: 8 Issue: 1 Pages: 1-2
Ag-segregation to dislocations in PbTe-based thermoelectric materials
ACS applied materials & interfaces [American Chemical Society], Volume: 10 Issue: 4 Pages: 3609-3615
Fangqiu Zu, Matthias Wuttig, Yaron Amouyal, and Oana Cojocaru-Mirédin
Ag-Segregation to Dislocations in PbTe-Based Thermoelectric Materials. ACS Applied Materials and Interfaces [], Volume: 10 Issue: 4 Pages: 3609-3615
Thermal annealing studies of GeTe-Sb2Te3 alloys with multiple interfaces
AIP Advances [AIP Publishing LLC], Volume: 7 Issue: 8 Pages: 085113
Angewandte Chemie [], Volume: 129 Issue: 34 Pages: 10338-10342
Angewandte Chemie [], Volume: 129 Issue: 34 Pages: 10381-10381
Angewandte Chemie International Edition [], Volume: 56 Issue: 34 Pages: 10247-10247
Angewandte Chemie International Edition [], Volume: 56 Issue: 34 Pages: 10204-10208
Crystallization properties of Sb-rich GeSbTe alloys by in-situ morphological and electrical analysis
Materials Science in Semiconductor Processing [Pergamon], Volume: 65 Pages: 100-107
Strain Development and Damage Accumulation Under Ion Irradiation of Polycrystalline Ge–Sb–Te Alloys
Nanoscience and Nanotechnology Letters [American Scientific Publishers], Volume: 9 Issue: 7 Pages: 1095-1101
Scientific reports [Nature Publishing Group], Volume: 7 Issue: 1 Pages: 1-9
Scientific reports [Nature Publishing Group], Volume: 7 Issue: 1 Pages: 1-7
Influence of hydrofluoric acid treatment on electroless deposition of Au clusters
Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 183-189
Chemical and structural arrangement of the trigonal phase in GeSbTe thin films
Nanotechnology [IOP Publishing], Volume: 28 Issue: 6 Pages: 065706
Modulation of van der Waals epitaxy induced by strain control at the step edges
Scientific Reports, accepted [],
Absorption edges of black phosphorus: A comparative analysis
physica status solidi (b) [], Volume: 253 Issue: 12 Pages: 2509-2514
Structural and electronic transitions in G e 2 S b 2 T e 5 induced by ion irradiation damage
Physical Review B [American Physical Society], Volume: 94 Issue: 9 Pages: 094103
Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials
Scientific reports [Nature Publishing Group], Volume: 6 Issue: 1 Pages: 1-7
Corrigendum: Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials
Scientific reports [Nature Publishing Group], Volume: 6
Phase Transitions in Ge-Sb-Te Alloys Induced by Ion Irradiations
MRS Advances [Materials Research Society], Volume: 1 Issue: 39 Pages: 2701-2709
Ageing mechanisms of highly active and stable nickel-coated silicon photoanodes for water splitting
Journal of Materials Chemistry A [Royal Society of Chemistry], Volume: 4 Issue: 21 Pages: 8053-8060
Structural transformations in Ge {sub 2} Sb {sub 2} Te {sub 5} under high pressure and temperature
Journal of Applied Physics [], Volume: 118 Issue: 6
Structural transformations in Ge2Sb2Te5 under high pressure and temperature
Journal of Applied Physics [AIP Publishing LLC], Volume: 118 Issue: 6 Pages: 064503
STEM and EELS investigation on black phosphorus at atomic resolution
Microscopy and Microanalysis [Cambridge University Press], Volume: 21 Issue: S3 Pages: 427-428
Coalescence of silver clusters by immersion in diluted HF solution
The Journal of chemical physics [AIP Publishing LLC], Volume: 143 Issue: 2 Pages: 024306
Quasiparticle spectrum and plasmonic excitations in the topological insulator Sb 2 Te 3
Physical Review B [American Physical Society], Volume: 91 Issue: 24 Pages: 245123
Nanoscale [Royal Society of Chemistry], Volume: 7 Issue: 26 Pages: 11401-11408
Maskless nano-implant of 20keV Ga+ in bulk Si (100) substrates
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 341 Pages: 7-12
Transient crystal grain nucleation in As doped amorphous silicon
Materials Letters [North-Holland], Volume: 126 Pages: 28-31
IEEE Transactions on Electron Devices [IEEE], Volume: 61 Issue: 8 Pages: 2879-2885
Electroless deposition of silver investigated with Rutherford backscattering and electron microscopy
ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 3 Issue: 7 Pages: P235
Light harvesting with Ge quantum dots embedded in SiO {sub 2} or Si {sub 3} N {sub 4}
Journal of Applied Physics [], Volume: 115 Issue: 4
Light harvesting with Ge quantum dots embedded in SiO2 or Si3N4
Journal of Applied Physics [American Institute of Physics], Volume: 115 Issue: 4 Pages: 043103
Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 7 Pages: 071901
Maskless implants of 20 keV Ga+ in thin crystalline silicon on insulator
Journal of Applied Physics [American Institute of Physics], Volume: 113 Issue: 4 Pages: 044315
Nanosession: Phase Change Memories
Frontiers in Electronic Materials: A Collection of Extended Abstracts of the Nature Conference Frontiers in Electronic Materials, June 17th to 20th 2012, Aachen, Germany [Wiley‐VCH Verlag GmbH & Co. KGaA], Pages: 163-176
Electrochemical and Solid State Letters [IOP Publishing], Volume: 15 Issue: 4 Pages: H105
Crystallization of primed amorphous Ge2Sb2Te5 studied by transmission electron microscopy
E/PCOS Proc [], Pages: 170-171
Amorphous-Crystal Phase Transitions in GexTe1-x Alloys
Journal of The Electrochemical Society [IOP Publishing], Volume: 159 Issue: 2 Pages: H130
Ion Irradiation on Phase Change Materials
MRS Online Proceedings Library [Springer International Publishing], Volume: 1354 Issue: 1 Pages: 73-78
Manipulation of amorphous Ge 2 Sb 2 Te 5 nano-structures in isolated and crystalline environment.
MRS Online Proceedings Library [Springer International Publishing], Volume: 1338 Issue: 1 Pages: 801-808
Polymorphism of amorphous Ge2Sb2Te5 probed by EXAFS and raman spectroscopy
Electrochemical and Solid State Letters [IOP Publishing], Volume: 14 Issue: 12 Pages: H480
Nucleation and grain growth in as deposited and ion implanted GeTe thin films
Journal of non-crystalline solids [North-Holland], Volume: 357 Issue: 10 Pages: 2197-2201
Tuning the crystallization temperature of amorphous Ge2Sb2Te5 by O and Si recoil implantation
Electrochemical and Solid-State Letters [The Electrochemical Society], Volume: 14 Issue: 3 Pages: H124-H127
Tuning the crystallization temperature of amorphous Ge2Sb2Te5 by O and Si recoil implantation
Electrochemical and Solid State Letters [IOP Publishing], Volume: 14 Issue: 3 Pages: H124
Local Order and Crystallization of Laser Quenched and Ion Implanted Amorphous Ge1− x Te x Thin Films
Electrochemical and Solid State Letters [IOP Publishing], Volume: 13 Issue: 9 Pages: H317
Crystallization of ion amorphized Ge 2 Sb 2 Te 5 thin films in presence of cubic or hexagonal phase
Journal of Applied Physics [American Institute of Physics], Volume: 107 Issue: 11 Pages: 113521
Stress [], Volume: 7 Pages: 12
Crystallization of ion amorphized Ge 2 Sb 2 Te 5 in nano-structured thin films
MRS Online Proceedings Library (OPL) [Cambridge University Press], Volume: 1251
Transversal plasmon resonance observed in tapered silicon nanowires
2024 International Conference on Optical MEMS and Nanophotonics (OMN) [IEEE], Pages: 1-2
Valence EELS investigation on GeSexTe1-x phase change material
EDGE 2017: Enhanced Data Generated by Electrons, 8th International Workshop on Electron Energy Loss Spectroscopy and Related Techniques [],
Electroless deposition of gold investigated with rutherford backscattering and electron microscopy
2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 37-40
Measuring Techniques for the Semiconductor’s Parameters
Springer Handbook of Semiconductor Devices [Springer, Cham], Pages: 117-168