Properties of ZnO films grown by atomic layer deposition at low temperature are described. By selecting appropriate precursors and their pulses we obtained films with controlled electrical properties – from heavily n-type to p-type. Parameters of constructed Schottky and p–n junction are good enough for their application in a new generation of memory devices with cross-bar architecture.
1 Dec 2008
Volume: 85 Issue: 12 Pages: 2434-2438