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Article PreviewArticle PreviewArticle PreviewWe present three different ways of transferring 3C-SiC layers grown on silicon on top of a SiC carrier using a carbon glue layer. Our main focus was upon the growth on the transition layer, as 3C-SiC does not feature any polarities in the< 100> or direction. We realized a stable and reproducible process by following a wet chemical approach, dealing with the difficulties of handling thin but freestanding 3C-SiC layers. By using this way, we transferred approximately 130 μm thick pieces using their horizontal hot-wall reactor (M10), which were chemo mechanically polished and afterwards fixed on our SiC carriers. Implementing such a seeding stack into our growth setup, we managed to grow between 20 μm and 130 μm thick layers on top. We have proven the possibility to grow on the transition layer. Furthermore, we observed a slight reduction in protrusion density …
Trans Tech Publications Ltd
Publication date: 
1 Jan 2019

Philipp Schuh, Ulrike Künecke, Grazia Litrico, Marco Mauceri, Francesco La Via, Sylvain Monnoye, Marcin Zielinski, Peter J Wellmann

Biblio References: 
Volume: 963 Pages: 149-152
Materials Science Forum