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In this work, we investigate the effect of performing a high dose 20 keV He* implant before the implantation of B at low energy (3 keV) in silicon and the subsequent thermal annealing at 800 C. The implants were performed in laterally confined regions defined by opening windows in a SiO2 mask, in order to evidence the impact on a realistic configuration used in device fabrication. High resolution quantitative scanning capacitance microscopy (SCM) combined with cross-section transmission electron microscopy (XTEM) allowed to clarify the role of the voids distribution produced during the thermal annealing on the diffusion and electrical activation of implanted B in Si. Particular evidence was given to the effect of the uniform nanovoids distribution, which forms in the region between the surface and the buried cavity layer.
Publication date: 
1 Jan 2005

F Giannazzo

Biblio References: 
Volume: 108 Pages: 395
Gettering and Defect Engineering in Semiconductor Technology...: GADEST...: Proceedings of the... International Autumn Meeting