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In this work, the surface, lattice and electrical properties of implanted 4H-SiC, GaN and ZnO, annealed by a novel ultra-fast microwave heating method, are compared to that of conventional annealing methods. In this new method, amplified and variable frequency microwaves from a signal generator are directly coupled to the semiconductor sample through a microwave head. Since, the microwaves are only absorbed by the sample, without heating of the ambient, ultra-high heating (> 2000 C/s) and cooling rates and very high (2100 C) annealing temperatures can be reached. For Al and P species implants into 4H-SiC, record low resistivity values were achieved with a lattice quality better than that of the virgin crystal. This annealing method improved the lattice quality of un-implanted region below the surface implanted region as well. Improved material characteristics were also obtained for GaN and ZnO.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2010

Mulpuri V Rao, Yong Lai Tian, Syed B Qadri, Jaime A Freitas, Roberta Nipoti

Biblio References: 
Volume: 645 Pages: 709-712
Materials Science Forum