Single-polished c-Si (1 0 0) wafers were textured in aqueous solutions with varying concentrations of tetra-methyl ammonium hydroxide (TMAH). The resulting surface reflectance and morphology were examined as a function of etching time and temperature, TMAH concentration, and addition of isopropyl alcohol to the solution.The lowest reflectance, 9.8% at a 600-nm wavelength with 0.3% scattering over a 4″ wafer surface, was obtained after 40 min of etching in a 2% TMAH solution at 80 °C under 700 rpm magnetic stirring. Upon adding isopropyl alcohol to the solution, the resulting pyramids were round-edged, and 12% sample reflectance was obtained.The results are interpreted in terms of micro-masking formation and temperature-dependent crystallographic selectivity.The compatibility of the treatment with photovoltaic applications was evaluated by studying the performance of heterojunction solar cells …