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In this paper we show for the 1st time that Silicon nanocrystal (Si-ncs) memories with high-k (HfO 2 , Al 2 O 3 and HfAlO) interpoly dielectrics (IPD) can offer excellent behaviour in the Fowler-Nordheim regime, with great relevance for future sub-45 nm NAND memory generations. We significantly advance the state-of-the-art by showing a strict correlation between the different IPD properties and the performance obtained on memory transistors down to 90 nm gate lengths. In particular the results demonstrate that HfAlO IPDs combine the fast p/e and good 105 cycles endurance behaviour of HfO 2 and the long retention of Al 2 O 3 with no activation up to 125degC Then, in order to boost the memory window, we also integrated a hybrid Si-nc/SiN layer floating gate, with a HfAlO based IPD. It is shown that a 6V DeltaV th can be achieved, with good retention and cycling behaviours.
Publication date: 
10 Dec 2007

G Molas, Marc Bocquet, J Buckley, JP Colonna, L Masarotto, H Grampeix, F Martin, V Vidal, A Toffoli, P Brianceau, L Vermande, P Scheiblin, M Gely, AM Papon, G Auvert, L Perniola, C Licitra, T Veyron, N Rochat, C Bongiorno, S Lombardo, B De Salvo, S Deleonibus

Biblio References: 
Pages: 453-456
2007 IEEE International Electron Devices Meeting