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Studying the temperature dependence of the electrical properties of Ohmic contacts formed on ion-implanted SiC layers is fundamental to understand and to predict the behaviour of practical devices. This paper reports the electrical characterization, as a function of temperature, of Ni-based Ohmic contacts, simultaneously formed on both n-or p-type implanted 4H-SiC. A structural analysis showed the formation of the Ni 2 Si phase after an annealing leading to Ohmic behaviour. The temperature-dependence of the specific contact resistance indicated that a thermionic field emission mechanism (TFE) dominates the current transport for contacts formed on p-type material, while a field emission (FE) is likely occurring in the contacts formed on n-type implanted SiC. The values of the barrier height were 0.75 eV on p-type material and 0.45 eV on n-type material. The thermal stability of the current transport mechanisms …
IOP Publishing
Publication date: 
29 May 2014
Biblio References: 
Volume: 29 Issue: 7 Pages: 075018
Semiconductor Science and Technology