Silicided Ni/Au contacts with very low contact resistance were realized on p-type [001] silicon at low temperature by ex-situ or, alternatively, by in situ annealing processes. During the ex-situ annealing, performed at 200  °C for 10 s, a uniformly thin (14 nm) Ni2Si layer was formed having an extremely flat interface with silicon thanks to the trans-rotational structure of the silicide. During the in situ annealing, promoted by a sputter etch processing (T