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Type: 
Journal
Description: 
In this paper the stress field distribution in 3C-SiC (111) resonators has been studied by micro-Raman measurements and COMSOL simulations. The measurements show that the asymmetry of the anchor points configuration produce an asymmetry in the stress filed distribution. This behavior has been confirmed also by the simulations. Furthermore, from the simulations the importance of the reduction of the under etching of the anchor points of the resonators has also been observed. In fact the reduction of this under etch produces a decrease of the stress in the double clamped beams, a small reduction of the resonance frequency, and a large reduction of the Q-factor and then of the oscillation frequency stability of the resonators in closed-loop operation.
Publisher: 
Trans Tech Publications Ltd
Publication date: 
26 Aug 2024
Authors: 

Viviana Scuderi, Annamaria Muoio, Sergio Sapienza, Matteo Ferri, Luca Belsito, Alberto Roncaglia, Francesco La Via

Biblio References: 
Volume: 984 Pages: 41-45
Origin: 
Key Engineering Materials