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A global minima search weighted and non-weighted least squares algorithm has been employed for a comparative study of various possible models to describe electrical properties of high dose Al implanted 4H-SiC. A wide range of experimental data has been taken from literature to demonstrate validation of the model. It was found that a single activation energy level, a temperature dependent Hall scattering factor and a degeneracy factor equal to 4 lead to a satisfactory fitting of experimental Hall data up to an Al substitutional density of 1020cm 3 in 4H SiC.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2012

Anindya Nath, Raffaele Scaburri, Mulpuri V Rao, Roberta Nipoti

Biblio References: 
Volume: 717 Pages: 237-240
Materials Science Forum