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In this paper, we evaluate the potentiality of high-k materials (Al2O3, HfO2 and HfAlO) for interpoly application in non-volatile memories. A study of the leakage currents of high-k based capacitors allowed to discuss the retention performances at room and high temperatures of high-k interpoly dielectrics. High-k materials are then integrated as control dielectrics in silicon nanocrystal and SONOS (Si/SiO2/Si3N4/SiO2/Si) memories. The role of the high-k layer on the memory performances is discussed; a particular attention being devoted to the retention characteristics. Analytical models, combined with experimental results obtained on various structures allowed to analyze the mechanisms involved during retention.
Publication date: 
1 Jul 2009

G Molas, Marc Bocquet, E Vianello, L Perniola, H Grampeix, JP Colonna, L Masarotto, F Martin, P Brianceau, M Gély, C Bongiorno, S Lombardo, G Pananakakis, G Ghibaudo, B De Salvo

Biblio References: 
Volume: 86 Issue: 7-9 Pages: 1796-1803
Microelectronic Engineering