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The effect of thermal dry oxidation on an off-axis (111) 3C-SiC film have been studied in order to subsequently realize a metal-oxide-semiconductor structure. A morphological characterization of the SiO2 surface, grown at 1200 °C in an O2 flux, pointed out some defect-related effects as a consequence of the preferential oxidation of stacking faults over the (111) 3C-SiC surface. Scanning electron microscopy and atomic force microscopy confirmed such a hypothesis. Stacking faults are seen as promoters of a local polarity inversion in (111) 3C-SiC, from Si- to C-terminated surface, resulting in a higher oxidation rate as compared to defect-free zones.
American Institute of Physics
Publication date: 
14 Sep 2009

A Severino, M Camarda, S Scalese, P Fiorenza, S Di Franco, C Bongiorno, A La Magna, F La Via

Biblio References: 
Volume: 95 Issue: 11 Pages: 111905
Applied Physics Letters