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We report on the design, fabrication, and electro-optical characterization of a light emitting device operating at 1.54 μm, whose active layer consists of silicon oxide containing Er-doped Si nanoclusters. A photonic crystal (PhC) is fabricated on the top-electrode to enhance the light extraction in the vertical direction, and thus the external efficiency of the device. This occurs if a photonic mode of the PhC slab is resonant with the Er emission energy, as confirmed by theoretical calculations and experimental analyses. We measure an increase of the extraction efficiency by a factor of 3 with a high directionality of light emission in a narrow vertical cone. External quantum efficiency and power efficiency are among the highest reported for this kind of material. These results are important for the realization of CMOS-compatible efficient light emitters at telecom wavelengths.
American Institute of Physics
Publication date: 
24 Mar 2014

R Lo Savio, M Galli, M Liscidini, LC Andreani, G Franzò, F Iacona, M Miritello, A Irrera, D Sanfilippo, A Piana, F Priolo

Biblio References: 
Volume: 104 Issue: 12 Pages: 121107
Applied Physics Letters