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Boron nitride (BN) thin films have been successfully synthesised via low pressure plasma enhanced chemical vapour deposition (PECVD) by using boranedimethylamine, BH3NH(CH3)2, as a single source precursor in the temperature range 280–550 °C in a nitrogen–argon atmosphere. The plasma power was optimised with the aim of obtaining suitable cubic/hexagonal phase ratios. The annealing of the h-BN films at temperatures up to 1000 °C in a nitrogen atmosphere, at normal pressure, gave rise to a complete transformation into the cubic phase. FTIR measurements provided a suitable method for identifying the structure of BN films. UV–vis spectroscopy was carried out in order to investigate the optical behaviour of the films.
Publication date: 
25 Aug 2005

Giovanni A Battiston, Davide Berto, Annalisa Convertino, Dario Emiliani, Albert Figueras, Rosalba Gerbasi, Sesto Viticoli

Biblio References: 
Volume: 50 Issue: 23 Pages: 4600-4604
Electrochimica acta