In their article “Temperature dependent switching behaviour of nickel silicided undoped silicon nanowire devices“ (see pp. 1611–1617), Beister et al. investigate the Schottky barriers in back-gated, single crystalline, undoped silicon nanowire field-effect transistors with Ni-silicided source/drain contacts. These devices exhibit an ambipolar behaviour, which gives the opportunity to measure both electron and hole transport on a single nanowire. For the purpose of barrier height extraction, the temperature dependence of the electrical switching properties is analysed in detail. A simple, phenomenological model illustrates the leading order tempe- rature dependence of the source–drain current, which origi- nates predominantly from charge carrier injection by tunnel- ling through the first Schottky junction. Drain current versus gate voltage measurements have been performed for various … Papers presented at the E-MRS 2014 Spring …