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In this work, we present some approaches recently developed for enhancing light emission from Er-based materials and devices. We have investigated the luminescence quenching processes limiting quantum efficiency in light-emitting devices based on Si nanoclusters (Si nc) or Er-doped Si nc. It is found that carrier injection, while needed to excite Si nc or Er ions through electron–hole recombination, at the same time produces an efficient non-radiative Auger de-excitation with trapped carriers. A strong light confinement and enhancement of Er emission at 1.54 μm in planar silicon-on-insulator waveguides containing a thin layer (slot) of SiO2 with Er-doped Si nc at the center of the Si core has been obtained. By measuring the guided photoluminescence from the cleaved edge of the sample, we have observed a more than fivefold enhancement of emission for the transverse magnetic mode over the transverse …
Publication date: 
1 May 2009

A Irrera, M Galli, M Miritello, R Lo Savio, F Iacona, G Franzò, A Canino, AM Piro, M Belotti, D Gerace, A Politi, M Liscidini, M Patrini, D Sanfilippo, PG Fallica, LC Andreani, F Priolo

Biblio References: 
Volume: 41 Issue: 6 Pages: 891-898
Physica E: Low-dimensional Systems and Nanostructures