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The paper reports on the fabrication and characterization of flexural resonators designed for resonant strain sensing and manufactured using 2 thick monocrystalline 3C-SiC layers grown on Silicon-On-Insulator substrates. The resonators are designed with Double-Ended-Tuning Fork geometry and actuated electrostatically using lateral electrodes fixed on the sides of the resonator tines, through coupling gaps with average width of 1.03 . They show excellent performance in vacuum environment with Q-factor around 30,000 and 18 dB high resonance peaks measured in open loop with DC bias voltage of 20 V. The closed-loop operation of the resonators with an external transimpedance amplifier feedback circuit is demonstrated and the stability of the resulting MEMS oscillator is analyzed using a microcontroller-based digital readout to measure its oscillation frequency. The results of the Allan deviation tests on the …
Publication date: 
12 Nov 2019

Luca Belsito, Matteo Bosi, Fulvio Mancarella, Matteo Ferri, Alberto Roncaglia

Biblio References: 
Volume: 29 Issue: 1 Pages: 117-128
Journal of Microelectromechanical Systems