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The manufacture process and the electrical characterization of MOS devices fabricated by wet oxidation of N+ implanted n-type 4H–SiC are here presented. Different implantation fluence and energy values were used with the aims to study the effect of the N concentration both at the SiO2/SiC interface and within the SiO2 film. High doses, able to amorphise a surface SiC layer to take advantage of the faster oxidation rate of amorphous with respect to crystalline SiC, were also evaluated. The electrical quality of the SiO2/SiC system was characterized by capacitance–voltage measurements of MOS capacitors. The analyses of the collected data show that only the implanted N which is located at the oxide–SiC interfaces is effective to reduce the interface states density. On the contrary, the interface states density remains high (the same of an un-implanted reference sample) when the implanted N is completely …
Publication date: 
1 Dec 2007

A Poggi, F Moscatelli, Y Hijikata, S Solmi, R Nipoti

Biblio References: 
Volume: 84 Issue: 12 Pages: 2804-2809
Microelectronic engineering