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CeO2 (cubic fluorite) thin films have been deposited on no-rolled Hastelloy C276 substrates by metal-organic chemical vapour deposition (MOCVD) from the Ce(hfa)3·diglyme [Hhfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedione; diglyme = (CH3O(CH2CH2O)2CH3)] precursor. The X-ray patterns of all samples grown in the 350–550 °C temperature range point to the formation of oriented CeO2 films, while at higher deposition temperatures (650–850 °C) random CeO2 films are formed. XRD data indicate that 450 °C is the best deposition temperature. Detailed studies of the influence of all deposition parameters (precursor vaporization temperature, O2 and Ar gas flows, deposition temperature and time) on the CeO2 film growth have been carried out. There is evidence that the deposition process occurs in a mass transport regime. A suitable rationale for the observed textural changes vs. temperature has …
Royal Society of Chemistry
Publication date: 
1 Jan 2005

Raffaella Lo Nigro, Roberta G Toro, Graziella Malandrino, Ignazio L Fragalà

Biblio References: 
Volume: 15 Issue: 23 Pages: 2328-2337
Journal of Materials Chemistry