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This paper reports on the modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures, studied by means of Transmission Line Model (TLM) structures, morphological and structural analyses, as well as computer simulations. In particular, the contacts exhibited an Ohmic behaviour after annealing at 800° C, with a specific contact resistance ρ C=(2.4±0.2)× 10− 5 Ω cm 2, which was associated to morphological and structural changes of both the metal layer and the interface. Interestingly, TLM analyses gave a value of the sheet resistance under the contact (R SK= 26.1±5.0 Ω/□) significantly lower than that measured outside the metal pads (R SH= 535.5±12.1 Ω/□). The structural changes observed near the metal/AlGaN interface can be responsible for this electrical modification deduced by TLM analyses. As a matter of fact, two-dimensional …
Publication date: 
8 Dec 2017

Monia Spera, Cristina Miccoli, Raffaella Lo Nigro, Corrado Bongiorno, Domenico Corso, Salvatore Di Franco, Ferdinando Iucolano, Fabrizio Roccaforte, Giuseppe Greco

Biblio References: 
Materials Science in Semiconductor Processing