-A A +A
The addition of a small percent of nitrogen to GaAs causes a large reduction of the band gap energy and a tensile strain within the lattice. The further addition of H at 300 C causes a recovery of the band gap of the N-free GaAs host. Concomitantly, tensile strain turns into compressive strain. Upon reduction of hydrogenation temperature, high-resolution x-ray diffraction studies show now a remarkable increase of compressive strain, while photoluminescence measurements show that the recovered band gap energy of GaAs …
American Institute of Physics Publising LLC
Publication date: 
1 Jan 2012

Antonio POLIMENI, M Berti, M Stavola, Mario Capizzi, Silvia Rubini, Rinaldo Trotta, Faustino Martelli, L Wen, WB Fowler, G Bisognin

Biblio References: 
Volume: 86 Issue: 8 Pages: 085206-1-085206-6
Physical Review B-Condensed Matter and Materials Physics