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B diffusion in crystalline Ge is investigated by proton irradiation in thin layers with B delta doping under different fluences (1× 10 15–10× 10 15 H+/cm 2), fluxes (6× 10 11–35× 10 11 H+/cm 2 s), and temperatures of the implanted target (from− 196 to 550 C), both during and after irradiation. B migration is enhanced by several orders of magnitude with respect to equilibrium. Moreover, B diffusion is shown to occur through a point-defect-mediated mechanism, compatible with a kick-out process. The diffusion mechanism is discussed. These results are a key point for a full comprehension of the B diffusion in Ge.
American Physical Society
Publication date: 
15 Jul 2009

E Bruno, S Mirabella, G Scapellato, G Impellizzeri, A Terrasi, F Priolo, E Napolitani, D De Salvador, M Mastromatteo, A Carnera

Biblio References: 
Volume: 80 Issue: 3 Pages: 033204
Physical Review B