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A standard RF-PECVD reactor is used to grow epitaxial SiGe layers at 175° C on c-Si (100) substrates. By adding GeH 4 to SiH 4/H 2 plasmas, we show for the first time epitaxial SiGe alloys with Ge atomic fraction up to 35% grown at such low temperature. Few μm thick layers are used as an absorber in the wafer equivalent approach: thin film c-Si (p++)/epi-Si 1-x Ge x/a-Si: H (n+) heterojunction solar cells are fabricated. Structural and electronic properties of these materials are investigated using Ellipsometry, Raman, TEM, J (V) characteristics and EQE. Simulations of device structure are performed with PC1D. Stress induced lift off enables detachment and transfer of ultra-thin Si layers of 1 cm 2, on inexpensive substrate. Crystal quality is not affected by the transfer process, and first proof of concept of PECVD epitaxial ultrathin transferred solar diode is obtained.
Publication date: 
16 Jun 2013

R Cariou, I Massiot, R Ruggeri, N Ramay, J Tang, A Cattoni, S Collin, J Nassar, P Roca i Cabarrocas

Biblio References: 
Pages: 0921-0926
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th