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We report on the fabrication and characterization of a metal-semiconductor-metal photodetector operating at 1550 nm and integrated into a silicon-on-insulator waveguide. Detection uses internal photoemissions through a metal/Si interface. In particular, a small metal/Si contact layer directly deposited on the vertical output facet of the waveguide absorbs the incoming radiation confined into a rib waveguide. The device parameters for responsivity, dark current, and bandwidth take values 3.5 mA, 3.5 nA, and 1 GHz, respectively. The results obtained indicate device suitability in power monitoring and telecommunications applications.
American Institute of Physics
Publication date: 
21 Oct 2013
Biblio References: 
Volume: 114 Issue: 15 Pages: 153103
Journal of Applied Physics