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Thin films (100–500 nm) of the Si:O alloy have been systematically characterized in the optical absorption and electrical transport behavior, by varying the Si content from 43 up to 100 at. %. Magnetron sputtering or plasma enhanced chemical vapor deposition have been used for the Si:O alloy deposition, followed by annealing up to 1250 °C. Boron implantation (30 keV, 3–30×1014 B/cm2) on selected samples was performed to vary the electrical sheet resistance measured by the four-point collinear probe method. Transmittance and reflectance spectra have been extracted and combined to estimate the absorption spectra and the optical band gap, by means of the Tauc analysis. Raman spectroscopy was also employed to follow the amorphous-crystalline (a-c) transition of the Si domains contained in the Si:O films. The optical absorption and the electrical transport of Si:O films can be continuously and …
American Institute of Physics
Publication date: 
1 Nov 2010

S Mirabella, G Di Martino, I Crupi, S Gibilisco, M Miritello, R Lo Savio, MA Di Stefano, S Di Marco, F Simone, F Priolo

Biblio References: 
Volume: 108 Issue: 9 Pages: 093507
Journal of Applied Physics