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Spin-charge interconversion phenomena at the interface between magnetic materials and topological insulators (TIs) are attracting enormous interest in the research effort towards the development of fast and ultra-low power devices for the future information and communication technology. We report a large spin-to-charge conversion efficiency in Au/Co/Au/Sb2Te3/Si(111) heterostructures based on Sb2Te3 TIs grown by metal organic chemical vapor deposition on 4 inches Si(111) substrates. By conducting room temperature spin pumping ferromagnetic resonance, we measure an inverse Edelstein Effect length {\lambda}IEE up to 0.75 nm, a record value for 3-dimensional chalcogenide-based TIs heterostructures. Our results open the path toward the use of chemical methods to produce TIs on large area Si substrates and characterized by highly performing spin-charge conversion, thus marking a milestone toward future technology-transfer.
Publication date: 
16 Apr 2021

Emanuele Longo, Matteo Belli, Mario Alia, Martino Rimoldi, Raimondo Cecchini, Massimo Longo, Claudia Wiemer, Lorenzo Locatelli, Gianluca Gubbiotti, Marco Fanciulli, Roberto Mantovan

Biblio References: 
arXiv preprint arXiv:2104.08124