2016 | IMM Container

Combined Bulk and Surface Radiation Damage Effects at Very High Fluences in Silicon Detectors: Measurements and TCAD Simulations

F Moscatelli, D Passeri, A Morozzi, Roberto Mendicino, G-F Dalla Betta, GM Bilei

2016-10-01

Biblio references: Volume: 63 Issue: 5 Pages: 2716-2723

Origin: IEEE Transactions on Nuclear Science

Substrate and atmosphere influence on oxygen p-doped graphene

Aurora Piazza, Filippo Giannazzo, Gianpiero Buscarino, Gabriele Fisichella, Antonino La Magna, Fabrizio Roccaforte, Marco Cannas, Franco Mario Gelardi, Bruno Pignataro, Michelangelo Scopelliti, Simonpietro Agnello

2016-10-01

Biblio references: Volume: 107 Pages: 696-704

Origin: Carbon

Is distal locking with short intramedullary nails necessary in stable pertrochanteric fractures? A prospective, multicentre, randomised study

V Caiaffa, Giovanni Vicenti, CLAUDIO Mori, Antonio Panella, V Conserva, G Corina, L Scialpi, Antonella Abate, Massimiliano Carrozzo, Leonardo Petrelli, Girolamo Picca, A Aloisi, G Rollo, Marco Filipponi, V Freda, A Pansini, A Puce, Giuseppe Solarino, Biagio Moretti

2016-10-01

Biblio references: Volume: 47 Pages: S98-S106

Origin: Injury

Atomic stacking and van-der-Waals bonding in GeTe–Sb2Te3 superlattices

Jamo Momand, Felix RL Lange, Ruining Wang, Jos E Boschker, Marcel A Verheijen, Raffaella Calarco, Matthias Wuttig, Bart J Kooi

2016-10-01

Biblio references: Volume: 31 Issue: 20 Pages: 3115-3124

Origin: Journal of Materials Research

Engineering organic/inorganic alumina-based films as dielectrics for red organic light emitting transistors

Caterina Soldano, Gianluca Generali, Elena Cianci, Grazia Tallarida, Marco Fanciulli, Michele Muccini

2016-10-01

Biblio references: Volume: 616 Pages: 408-414

Origin: Thin Solid Films

Diatom Valve Three-Dimensional Representation: A New Imaging Method Based on Combined Microscopies

Maria Antonietta Ferrara, Edoardo De Tommasi, Giuseppe Coppola, Luca De Stefano, Ilaria Rea, Principia Dardano

2016-10-01

Biblio references: Volume: 17 Issue: 10 Pages: 1645

Origin: International journal of molecular sciences

Engineering the Growth of MoS2 via Atomic Layer Deposition of Molybdenum Oxide Film Precursor

Christian Martella, Pierpaolo Melloni, Eugenio Cinquanta, Elena Cianci, Mario Alia, Massimo Longo, Alessio Lamperti, Silvia Vangelista, Marco Fanciulli, Alessandro Molle

2016-10-01

Biblio references: Volume: 2 Issue: 10 Pages: 1600330

Origin: Advanced Electronic Materials

Graphene integration with nitride semiconductors for high power and high frequency electronics

F Giannazzo, G Fisichella, G Greco, A La Magna, F Roccaforte, Béla Pécz, R Yakimova, R Dagher, A Michon, Y Cordier

2016-10-01

Biblio references:

Origin: physica status solidi (a)

Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices

Patrick Fiorenza, Giuseppe Greco, Marilena Vivona, Filippo Giannazzo, Salvatore Di Franco, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

2016-10-01

Biblio references:

Origin: physica status solidi (a)

The XGS instrument on-board THESEUS

FABIO Fuschino, RICCARDO Campana, CLAUDIO Labanti, M Marisaldi, LORENZO Amati, MAURO Fiorini, MICHELA Uslenghi, G Baldazzi, YURI Evangelista, I Elmi, MARCO Feroci, F Frontera, A Rachevski, LP Rignanese, A Vacchi, G Zampa, N Zampa, I Rashevskaya, Pierluigi Bellutti, Claudio Piemonte

2016-10-01

Biblio references: Volume: 763 Issue: 1 Pages: 012009

Origin: Journal of Physics: Conference Series

Combined Bulk and Surface Radiation Damage Effects at Very High Fluences in Silicon Detectors: Measurements and TCAD Simulations

Substrate and atmosphere influence on oxygen p-doped graphene

Is distal locking with short intramedullary nails necessary in stable pertrochanteric fractures? A prospective, multicentre, randomised study

Atomic stacking and van-der-Waals bonding in GeTe–Sb2Te3 superlattices

Engineering organic/inorganic alumina-based films as dielectrics for red organic light emitting transistors

Diatom Valve Three-Dimensional Representation: A New Imaging Method Based on Combined Microscopies

Engineering the Growth of MoS2 via Atomic Layer Deposition of Molybdenum Oxide Film Precursor

Graphene integration with nitride semiconductors for high power and high frequency electronics

Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices

The XGS instrument on-board THESEUS

Pages

Scientific Productions

Units in Italy

Contact info

Link Utili

You are here

Pages

Scientific Productions

Units in Italy

Contact info

Link Utili