2009 | IMM Container

A Irrera, M Galli, M Miritello, R Lo Savio, F Iacona, G Franzò, A Canino, AM Piro, M Belotti, D Gerace, A Politi, M Liscidini, M Patrini, D Sanfilippo, PG Fallica, LC Andreani, F Priolo

2009-05-01

Biblio references: Volume: 41 Issue: 6 Pages: 891-898

Origin: Physica E: Low-dimensional Systems and Nanostructures

Assessment of swift-ion damage by RBS/C: Determination of the amorphization threshold

A Rivera, J Olivares, ML Crespillo, G García, M Bianconi, F Agulló-López

2009-05-01

Biblio references: Volume: 267 Issue: 8-9 Pages: 1460-1463

Origin: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Back-illuminated silicon resonant cavity-enhanced photodetector at 1550nm

M Casalino, L Sirleto, Luigi Moretti, M Gioffrè, G Coppola, M Iodice, I Rendina

2009-05-01

Biblio references: Volume: 41 Issue: 6 Pages: 1097-1101

Origin: Physica E: Low-dimensional Systems and Nanostructures

High density electron emission source based on carbon nanotubes for industrial applications

GP Veronese, R Angelucci, F Suriano, R Rizzoli

2009-05-01

Biblio references: Volume: 18 Issue: 5-8 Pages: 963-966

Origin: Diamond and related materials

Wearout and breakdown of gate dielectrics under high field stress

Salvatore A Lombardo, James H Stathis, Gennadi Bersuker

2009-05-01

Biblio references: Issue: 19 Pages: 788-788

Origin: Meeting Abstracts

The zero field self-organization of cobalt/surfactant nanocomposite thin films

Bipolar resistive electrical switching of CuTCNQ memories incorporating a dedicated switching layer

In Situ Plasmon‐Heating‐Induced Generation of Au/TiO2 “Hot Spots” on Colloidal Crystals

Graded selective coatings based on zirconium and titanium oxynitride

Low temperature formation and evolution of a 10 nm amorphous Ni–Si layer on [001] silicon studied by in situ transmission electron microscopy

New approaches for enhancing light emission from Er-based materials and devices

Assessment of swift-ion damage by RBS/C: Determination of the amorphization threshold

Back-illuminated silicon resonant cavity-enhanced photodetector at 1550nm

High density electron emission source based on carbon nanotubes for industrial applications

Wearout and breakdown of gate dielectrics under high field stress

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