2006 | IMM Container

Part 1-Chapter 2-SiC Epitaxial Growth-2.1 Homoepitaxial Growth-Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization

F La Galvagno, G Via, A Roccaforte, F Firrincieli, S Di Ruggiero, A Franco, L Foti, G Calcagno, M Leone, S Mauceri, G Abbondanza, G Pistone, F Abagnale, G Portuese, GL Crippa, D Valente

2006-01-01

Biblio references: Volume: 527529 Pages: 199-202

Origin: Materials Science Forum

Atomic resolution STEM-HAADF imaging in the study of interfaces

E Carlino, V Grillo

2006-01-01

Biblio references: Volume: 51 Issue: 1 Pages: 23-32

Origin: Archives of metallurgy and materials

, M. Losurdo, MM Giangregorio, G. Bruno, V. Raineri, and P. Fiorenza,‘‘Calcium Copper-Titanate Thin Film Growth: Tailoring of the Operational Conditions Through …

R Lo Nigro, RG Toro, G Malandrino, IL Fragalà

2006-01-01

Biblio references: Volume: 110 Pages: 17460-7

Origin: J. Phys. Chem. B

Thermo-Electrical Analysis of an Optoelectronic Modulator Integrated in a SOI Rib Waveguide Operating in the Gb/s Regime

Mario Iodice, Giuseppe Coppola, Rocco Cristian Zaccuri

2006-01-01

Biblio references: Volume: 934

Origin: MRS Online Proceedings Library Archive

Metal oxide nanocrystals multi-parametric gas sensors

E Comini, C Baratto, M Ferroni, G Faglia, G Sberveglieri

2006-01-01

Biblio references: Volume: 3

Origin: 稀有金属材料与工程

Design of electro-optic Bragg amplitude modulator

Al Secchi, V Foglietti, E Cianci, L Pierno, M Dispenza

2006-01-01

Biblio references:

Origin: Proceedings of COMSOL Users Conference

RADIATION DAMAGE EFFECTS-Radiation Hardness After Very High Neutron Irradiation of Minimum Ionizing Particle Detectors Based on 4H-SiC p+ n Junctions

F Moscatelli, A Scorzoni, A Poggi, M Bruzzi, S Sciortino, S Lagomarsino, G Wagner, I Mandic, R Nipoti

2006-01-01

Biblio references: Volume: 53 Issue: 3 Pages: 1557-1563

Origin: IEEE Transactions on Nuclear Science

RECOMBINATION PROCESSES DURING THE LASER-PLASMA EXPANSION

A Lorusso, F Belloni, D Doria, V Nassisi, L Velardi

2006-01-01

Biblio references: Volume: 30 Issue: G Pages: 95

Origin: EUROPHYSICS CONFERENCE ABSTRACTS ECA

Part 1-Chapter 2-SiC Epitaxial Growth-2.1 Homoepitaxial Growth-Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process

F La Galvagno, G Via, A Roccaforte, F Firrincieli, S Di Ruggiero, A Franco, M Reitano, R Barbera, P Calcagno, L Musumeci, G Mauceri, M Foti, S Pistone, G Leone, F Abbondanza, G Portuese, G Valente, GL Abagnale, D Crippa

2006-01-01

Biblio references: Volume: 527529 Pages: 163-166

Origin: Materials Science Forum

Metal Oxide Nanocrystals Multi-Parametric Gas Sensors

E Comini, C Baratto, M Ferroni, G Faglia, G Sberveglieri

2006-01-01

Biblio references: Volume: 3

Origin: 稀有金属材料与工程

Part 1-Chapter 2-SiC Epitaxial Growth-2.1 Homoepitaxial Growth-Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization

Atomic resolution STEM-HAADF imaging in the study of interfaces

, M. Losurdo, MM Giangregorio, G. Bruno, V. Raineri, and P. Fiorenza,‘‘Calcium Copper-Titanate Thin Film Growth: Tailoring of the Operational Conditions Through …

Thermo-Electrical Analysis of an Optoelectronic Modulator Integrated in a SOI Rib Waveguide Operating in the Gb/s Regime

Metal oxide nanocrystals multi-parametric gas sensors

Design of electro-optic Bragg amplitude modulator

RADIATION DAMAGE EFFECTS-Radiation Hardness After Very High Neutron Irradiation of Minimum Ionizing Particle Detectors Based on 4H-SiC p+ n Junctions

RECOMBINATION PROCESSES DURING THE LASER-PLASMA EXPANSION

Part 1-Chapter 2-SiC Epitaxial Growth-2.1 Homoepitaxial Growth-Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process

Metal Oxide Nanocrystals Multi-Parametric Gas Sensors

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