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We show that geometric shielding of the reactive flux in chemical vapor deposition by tall neighboring structures obtained by deep substrate patterning, along with short surface diffusion lengths, can provide nearly space filling arrays of high-quality epitaxial crystals despite large mismatches of lattice parameters and thermal expansion coefficients. The density of extended defects is strongly reduced by the method, and wafer bowing and crack formation largely inhibited. The concept is shown to be valid for SiGe/Si ...
The Electrochemical Society
Publication date: 
12 Aug 2014

Hans von Känel, Fabio Isa, Claudiu V Falub, Eszter Judit Barthazy, Elisabeth Müller Gubler, Daniel Chrastina, Giovanni Isella, Thomas Kreiliger, Alfonso Gonzalez Taboada, Mojmir Meduna, Rolf Kaufmann, Antonia Neels, Alex Dommann, Philippe Niedermann, Fulvio Mancarella, Marco Mauceri, Marco Puglisi, Danilo Crippa, Francesco La Via, Ruggero Anzalone, Nicolo Piluso, Roberto Bergamaschini, Anna Marzegalli, Leo Miglio

Biblio References: 
Volume: 64 Issue: 6 Pages: 631-648
ECS Transactions