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In this paper, we evaluate the potentialities of hafnium-aluminates (HfAlO) materials as possible candidates for the interpoly dielectrics of future Flash memory devices. HfAlO layers of different thicknesses and compositions are integrated in single-layers and in Oxide/HfAlO/Oxide (OHO) triple-layer stacks, and analyzed in terms of coupling and insulating capabilities. We demonstrate that increasing the Hf content allows reducing the leakage current at high voltages but it results in a stronger leakage current at low voltages. We also show that once normalized in electric fields, the leakage current characteristics are independent of the high-k thickness. The electron conduction modes in these materials, at different temperatures, are also investigated. The activation energy increases with the Hf concentration in the HfAlO alloy, resulting in a higher leakage current at elevated temperatures. Finally, it is demonstrated that …
Publication date: 
1 Nov 2007

Gabriel Molas, Marc Bocquet, Julien Buckley, Helen Grampeix, Marc Gély, Jean-Philippe Colonna, Christophe Licitra, Névine Rochat, Thomas Veyront, Xavier Garros, François Martin, Pierre Brianceau, Vincent Vidal, Cosimo Bongiorno, Salvatore Lombardo, Barbara De Salvo, Simon Deleonibus

Biblio References: 
Volume: 51 Issue: 11-12 Pages: 1540-1546
Solid-state electronics