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Semiconductor nanowires (NWs) often present different structural and opto-electronic properties than their thin film counterparts. The thinner they are, the larger these differences are. Here, we present femtosecond transient absorbance measurements on GaAs 0.8 P 0.2 NWs of two different diameters, 36 and 51 nm. The results show that thinner NWs sustain a higher carrier temperature for longer times than thicker NWs. This observation suggests that, in thinner NWs, the buildup of a hot-phonon bottleneck is easier than in thicker NWs because of the increased phonon scattering at the NW sidewalls, which facilitates the buildup of a large phonon density. Moreover, the important observation that the carrier temperature in thin NWs is higher than in thick NWs already at the beginning of the hot carrier regime suggests that the phonon-mediated scattering processes in the nonthermal regime play a major role at least for …
American Physical Society
Publication date: 
21 Jul 2021

Aswathi K Sivan, Lorenzo Di Mario, Yunyan Zhang, Daniele Catone, Patrick O’Keeffe, Stefano Turchini, Valentina Mussi, Huiyun Liu, Faustino Martelli

Biblio References: 
Volume: 104 Issue: 4 Pages: 045423
Physical Review B