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Atomic layer deposition of Al: ZrO2 films on In0. 53Ga0. 47As substrates is shown to be a promising route to boost the oxide permittivity with respect to Al2O3 gate dielectrics and concomitantly take benefit from the reducing effect of the trimethylaluminum precursor on the In0. 53Ga0. 47As surface. We demonstrates that increasing the number of initial Al2O3 cycles in the growth sequence can improve the physical quality and the electrical response of the Al: ZrO2/In0. 53Ga0. 47As interface while preserving the overall composition of the oxide.© 2011 The Japan Society of Applied Physics
Publication date: 
1 Jan 2011

Marco Fanciulli, Clement Merckling, Guy Brammertz, Matty Caymax

Biblio References: 
Volume: 4 Pages: 094103
Applied Physics Express