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In this work, the combined effect of a shallow phosphorus (P) pre-implantation and of a nitridation annealing in N 2 O on the properties of the SiO 2/4H-SiC interface has been investigated. The peak carrier concentration and depth extension of the electrically active dopants introduced by the nitridation and by the combination of P pre-implantation and nitridation were determined by high resolution scanning capacitance microscopy (SCM). Macroscopic capacitance-voltage (CV) measurements on metal oxide semiconductor (MOS) capacitors and nanoscale CV analyses by SCM allowed to quantify the electrical effect of the donors introduced underneath the SiO 2/4H-SiC interface. Phosphorous pre-implantation and subsequent high temperature electrical activation has been shown not only to produce an increased doping in the 4H-SiC surface region but also a better homogeneity of surface potential with respect to …
Trans Tech Publications Ltd
Publication date: 
1 Jan 2016

Patrick Fiorenza, Salvatore Di Franco, Filippo Giannazzo, Simone Rascunà, Mario Saggio, Fabrizio Roccaforte

Biblio References: 
Volume: 858 Pages: 701-704
Materials Science Forum