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The extension of SiGe technology towards new electronic and optoelectronic applications on the Si platform requires that Ge-rich nanostructures be obtained in a well-controlled manner. Ge deposition on Si substrates usually creates SiGe nanostructures with relatively low and inhomogeneous Ge content. We have realized SiGe nanostructures with a very high (up to 90%) Ge content. Using substrate patterning, a regular array of nanostructures is obtained. We report that electron microscopy reveals an abrupt change in Ge content of about 20% between the filled pit and the island, which has not been observed in other Ge island systems. Dislocations are mainly found within the filled pit and only rarely in the island. Selective chemical etching and electron energy-loss spectroscopy reveal that the island itself is homogeneous. These Ge-rich islands are possible candidates for electronic applications requiring locally …
IOP Publishing
Publication date: 
4 Jan 2012

Monica Bollani, Daniel Chrastina, Valeria Montuori, Daniela Terziotti, Emiliano Bonera, Giovanni M Vanacore, Alberto Tagliaferri, Roman Sordan, Corrado Spinella, Giuseppe Nicotra

Biblio References: 
Volume: 23 Issue: 4 Pages: 045302