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We present a DC-AC Hall-effect analysis on transition-metal-dichalcogenides comprising natural crystals of molybdenum disulfide and tungsten diselenide; and synthetic crystals of hafnium diselenide, molybdenum ditelluride, molybdenum diselenide and niobium-doped molybdenum disulfide. We observe a wide range of Hall mobility and carrier concentration values with either a net electron or hole carrier type. The synthetic niobium-doped molybdenum disulfide crystal exhibits a net hole carrier type and a carrier concentration approximately two orders of magnitude higher than a non-intentionally doped natural molybdenum disulfide crystal, with an equivalent reduction in Hall mobility. This synthetic niobium-doped molybdenum disulfide crystal also shows a significantly reduced resistivity when compared to the other crystals. Secondary ion mass spectrometry shows higher counts of niobium in the intentionally …
Publication date: 
3 Apr 2017

Scott Monaghan, Farzan Gity, Ray Duffy, Gioele Mirabelli, Melissa McCarthy, Karim Cherkaoui, Ian M Povey, Roger E Nagle, Paul K Hurley, Jeffrey R Lindemuth, Enrico Napolitani

Biblio References: 
Pages: 27-30
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)