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GaN nanodots (NDs) are obtained by Ga metallic droplet formation on Si (1 1 1) substrates followed by their nitridation. The size and density of Ga droplets and GaN NDs can be controlled by varying the growth temperature within the range 514–640 °C. Atomic force microscopy (AFM) investigation of Ga droplets shows an increase in the average diameter with temperature. The average diameter of GaN NDs increases with growth temperature while their density decreases more than one order of magnitude. In addition, the formation of a GaN crystallite rough layer on Si, in-between NDs, indicates that a spreading mechanism takes place during the nitridation process. High-resolution transmission electron microscopy (HRTEM) is used for the investigation of shape, crystalline quality and surface distribution of GaN dots. X-ray photoelectron spectroscopy (XPS) results confirm that Ga droplets that are transformed into …
Publication date: 
15 Jun 2009

RK Debnath, T Stoica, A Besmehn, K Jeganathan, E Sutter, R Meijers, H Lüth, R Calarco

Biblio References: 
Volume: 311 Issue: 13 Pages: 3389-3394
Journal of crystal growth