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Coherent gold nanoislands were prepared directly on (100)-oriented Si substrates by a physical methodology, consisting of the thermal evaporation of a very thin Au film (t∼ 2 nm) and its successive annealing in the temperature range 350 C< T< 814 C. We found that at annealing temperature of 814 C and in the presence of residual oxygen during the annealing process, epitaxial monocrystalline gold nanoislands embedded in the Si lattice are formed. The crystallographic orientation and epitaxial relationship between the Au nanoislands and the Si lattice are well defined. In contrast, at lower annealing temperatures, namely at 350 C and 626 C, the nanoislands are randomly oriented without epitaxial relationships. The morphology, orientation, and crystalline structure of Au nanoislands were investigated by scanning and high-resolution transmission electron microscopy and grazing-incidence x-ray diffraction. A …
American Physical Society
Publication date: 
2 Jul 2008

Emanuela Piscopiello, Leander Tapfer, Marco Vittori Antisari, Pasquale Paiano, Paola Prete, Nicola Lovergine

Biblio References: 
Volume: 78 Issue: 3 Pages: 035305
Physical Review B