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In this paper the epitaxial process with chloride precursors has been described. In particular it has been shown that the growth rate can be increased to about 100 μm/h but higher growth rate can be difficult to reach due to the limited surface diffusion at the usual temperature of SiC epitaxy. This process gives several advantages because it gives the opportunity to increase the throughput and consequently to reduce the cost of epitaxy, using new reactor structures, and to reduce several kind of defects (Basal Plane Dislocations, Stacking Faults, Threading Dislocations) and to decrease the surface roughness at the same time.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2013

Francesco La Via, Massimo Camarda, Andrea Canino, Andrea Severino, Antonino La Magna, Marco Mauceri, Carmelo Vecchio, Danilo Crippa

Biblio References: 
Volume: 740 Pages: 167-172
Materials Science Forum