In recent years, research on hyperdoped semiconductors has accelerated, displaying dopant concentrations far exceeding solubility limits to surpass the limitations of conventionally doped materials. Nitrogen defects in silicon have been extensively investigated for their unique characteristics compared to other pnictogen dopants. However, previous practical investigations have encountered challenges in achieving high nitrogen defect concentrations due to the low solubility and diffusivity of nitrogen in silicon, and the necessary non-equilibrium techniques, such as ion implantation, resulting in crystal damage and amorphisation. In this study, we present a single-step technique called high-pressure gas immersion excimer laser doping (HP-GIELD) to manufacture nitrogen-hyperdoped silicon. Our approach offers ultrafast processing, scalability, high control, and reproducibility. Employing HP-GIELD, we achieved …